INFINEON SPA11N60CFD User Manual

SPA11N60CFD
CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Intrinsic fast-recovery body diode
Product Summary
V
DS
R
DS(on),max
1)
I
D
• Extremely low reverse recovery charge
• Extreme dv /dt rated
• High peak current capability
• Periodic avalanche rated
0)
• Qualified according to JEDEC
for target applications
Type Package Ordering Code Marking
SPA11N60CFD TO-220-3-31 SP000216317 11N60CFD
600 V
0.44
11 A
PG-TO220-3-31
Maximum ratings, at T
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
Drain source voltage slope dv /dt
Reverse diode dv /dt dv /dt V/ns
Maximum diode commutation speed di /dt A/µs
Gate source voltage
Power dissipation
=25 °C, unless otherwise specified
j
1)
I
D
TC=25 °C
T
2)
2),3)
2),3)
I
D,pulse
E
AS
E
AR
I
AR
TC=25 °C
ID=5.5 A, VDD=50 V
ID=11 A, VDD=50 V
I T
I T
V
GS
static V
AC (f >1 Hz)
P
tot
TC=25 °C
=100 °C
C
=11 A, VDS=480 V,
D
=125 °C
j
=11 A, VDS=480 V,
S
=125 °C
j
Value
11
7
28
340 mJ
0.6
11
80
40
600
±20
±30
33
A
A
V/ns
W
Operating and storage temperature
T
j
stg
-55 ... 150
°C
, T
Rev. 1.2 page 1 2006-05-15
SPA11N60CFD
g
Parameter Symbol Conditions Unit
Values
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction ­ambient
Soldering temperature, wave solderin
Electrical characteristics, at T
R
thJC
R
thJA
T
sold
=25 °C, unless otherwise specified
j
leaded - - 62
1.6 mm (0.063 in.) from case for 10 s
- - 3.8 K/W
- - 260 °C
Static characteristics
Drain-source breakdown voltage
Avalanche breakdown voltage
Gate threshold voltage
V
(BR)DSSVGS
V
(BR)DSVGS
V
GS(th)
=0 V, ID=250 µA
=0 V, ID=11 A
VDS=VGS, ID=1.9 mA
600 - - V
- 700 -
345
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
I
I
R
R
g
DSS
GSS
DS(on)
G
fs
VDS=600 V, VGS=0 V, T
=25 °C
j
V
=600 V, VGS=0 V,
DS
T
=150 °C
j
VGS=20 V, VDS=0 V
VGS=10 V, ID=7 A, T
=25 °C
j
V
=10 V, ID=7 A,
GS
T
=150 °C
j
- 1.1 - µA
- 900 -
- - 100 nA
- 0.38 0.44
- 1.02 -
f =1 MHz, open drain - 0.86 -
|VDS|>2|ID|R
I
=7 A
D
DS(on)max
,
- 8.3 - S
Rev. 1.2 page 2 2006-05-15
SPA11N60CFD
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance, energy
4)
related
Effective output capacitance, time
5)
related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
C
C
C
C
t
t
t
t
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
f
=0 V, VDS=25 V,
V
GS
f =1 MHz
=0 V, VDS=0 V
V
GS
to 480 V
V
=480 V,
DD
V
=10 V, ID=11 A,
GS
=6.8
R
G
- 1200 - pF
- 390 -
-30-
-45-
-85-
-34-ns
-18-
-43-
-7-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
0)
J-STD20 and JESD22
1)
Limited only by maximum temperature.
2)
Pulse width tp limited by T
3)
Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.
4)
C
is a fixed capacitance that gives the same stored energy as C
o(er)
5)
C
is a fixed capacitance that gives the same charging time as C
o(tr)
j,max
Q
Q
Q
V
gs
gd
g
plateau
V
=480 V, ID=11 A,
DD
V
=0 to 10 V
GS
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
-9-nC
-23-
-4864
- 7.5 - V
DSS.
DSS.
Rev. 1.2 page 3 2006-05-15
SPA11N60CFD
Parameter Symbol Conditions Unit
Values
min. typ. max.
Reverse Diode
Diode continuous forward current
Diode pulse current
2)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
I
S
I
S,pulse
V
SD
t
rr
Q
I
rrm
=25 °C
T
C
VGS=0 V, IF=11 A, T
=25 °C
j
V
=480 V, IF=IS,
rr
R
di
/dt =100 A/µs
F
- - 11 A
--28
- 1.0 1.2 V
- 140 - ns
- 0.7 - µC
-11-A
1)
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
typ. typ.
R
th1
0.0178 K/W C
th1
0.0000989 Ws/K
R
th2
R
th3
R
th4
R
th5
0.0931 C
0.228 C
0.559 C
1.58 C
th2
th3
th4
th5
0.000939
0.00303
0.0245
0.951
Rev. 1.2 page 4 2006-05-15
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