INFINEON SPP11N60C3, SPI11N60C3, SPA11N60C3 User Manual
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)
j
A
j
j
g
SPP11N60C3
SPI11N60C3, SPA11N60C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
P-TO220-3-31
• PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP11N60C3
SPI11N60C3
Package
PG-TO220-3
PG-TO262-3
Ordering Code
Q67040-S4395
Q67042-S4403
3
2
1
Marking
11N60C3
11N60C3
VDS @ T
R
PG-TO262-3PG-TO220-3-31 PG-TO220
DS(on
I
D
max
650 V
0.38 Ω
11 A
SPA11N60C3
PG-TO220-3-31
Maximum Ratings
Parameter
Continuous drain current
T
= 25 °C
C
= 100 °C
T
C
Pulsed drain current, tp limited by T
Avalanche energy, single pulse
I
=5.5A, V
D
Avalanche energy, repetitive t
I
=11A, V
D
Avalanche current, repetitive t
DD
DD
=50V
=50V
limited by T
AR
limited by T
R
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation,
TC = 25°C
SP000216312
max
jmax
max
2)
11N60C3
Symbol
I
D
I
Dpuls
E
AS
E
AR
I
AR
V
GS
V
GS
P
tot
SPP_I
11
7
33
340
0.6
11
±20
±30
125
Value
SPA
1)
11
1)
7
33
340
0.6
11
±20
±30
33
Unit
A
A
mJ
A
V
W
T
,
Operating and storage temperature
Reverse diode dv/dt dv/dt 15 V/ns
Rev.2.6 Page 1
7)
T
st
-55...+150
°C
2005-09-21
Maximum Ratings
)
SPP11N60C3
SPI11N60C3, SPA11N60C3
Parameter
Drain Source voltage slope
V
= 480 V, I
DS
= 11 A, T
D
= 125 °C
j
Symbol Value Unit
dv/dt 50 V/ns
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Symbol Values Unit
R
Thermal resistance, junction - case, FullPAK R
Thermal resistance, junction - ambient, leaded
R
Thermal resistance, junction - ambient, FullPAK R
SMD version, device on PCB:
R
@ min. footprint
@ 6 cm
2
cooling area
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s
3)
T
4)
thJC
thJC_FP
thJA
thJA_FP
thJA
sold
min. typ. max.
- - 1 K/W
- - 3.8
- - 62
- - 80
-
-
-
35
62
-
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Drain-source breakdown voltage
Drain-Source avalanche
Symbol Conditions Values Unit
V
(BR)DSS
V
(BR)DS
V
=0V, ID=0.25mA 600 - - V
GS
V
=0V, ID=11A - 700 -
GS
breakdown voltage
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate input resistance
R
GS(th
DSS
GSS
DS(on)
G
ID=500µA, VGS=V
VDS=600V, V
T
=25°C
j
T
=150°C
j
VGS=30V, V
V
=10V, ID=7A
GS
T
=25°C
j
T
=150°C
j
f=1MHz, open drain - 0.86 -
DS
=0V,
GS
=0V - - 100 nA
DS
min. typ. max.
2.1 3 3.9
-
-
-
-
0.1
-
0.34
0.92
1
100
0.38
-
µA
Ω
Rev.2.6 Page 2
2005-09-21
Electrical Characteristics
(
)
SPP11N60C3
SPI11N60C3, SPA11N60C3
Parameter
Symbol Conditions Values Unit
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
5)
C
energy related
Effective output capacitance,
6)
C
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
fs
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
f
V
≥2*ID*R
DS
I
=7A
D
VGS=0V, V
f=1MHz
V
=0V,
GS
V
=0V to 480V
DS
VDD=380V, V
I
=11A,
D
R
=6.8Ω
G
DS
DS(on)max
=25V,
=0/10V,
GS
min. typ. max.
,
- 8.3 - S
- 1200 - pF
- 390 -
- 30 -
- 45 -
- 85 -
- 10 - ns
- 5 -
- 44 70
- 5 9
Gate Charge Characteristics
Gate to source charge
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
1
Limited only by maximum temperature
2
Repetitve avalanche causes additional power losses that can be calculated as P
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4
Soldering temperature for TO-263: 220°C, reflow
5
C
is a fixed capacitance that gives the same stored energy as C
o(er)
6
C
is a fixed capacitance that gives the same charging time as C
o(tr)
7
ISD<=ID, di/dt<=400A/us, V
Identical low-side and high-side switch.
DClink
Q
gs
gd
g
plateau
=400V, V
V
=480V, ID=11A - 5.5 - nC
DD
V
=480V, ID=11A,
DD
V
=0 to 10V
GS
V
=480V, ID=11A - 5.5 - V
DD
peak<VBR, DSS
, Tj<T
j,max
oss
oss
.
while V
while V
- 22 -
- 45 60
=EAR*f.
AV
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
DS
DSS
DSS
.
.
Rev.2.6 Page 3
2005-09-21
Electrical Characteristics
SPP11N60C3
SPI11N60C3, SPA11N60C3
Parameter
Inverse diode continuous
Symbol Conditions Values Unit
I
S
forward current
Inverse diode direct current,
I
SM
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
SD
rr
rr
rrm
dirr/dt
recovery current
Typical Transient Thermal Characteristics
Symbol
SPP_I SPP_I
Value Unit Symbol Value Unit
SPA SPA
min. typ. max.
T
=25°C - - 11 A
C
- - 33
V
=0V, IF=I
GS
V
=480V, IF=IS ,
R
di
/dt=100A/µs
F
S
- 1 1.2 V
- 400 600 ns
- 6 - µC
- 41 - A
T
=25°C - 1200 - A/µs
j
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
0.015 0.15 K/W C
0.03 0.03 C
0.056 0.056 C
0.197 0.194 C
0.216 0.413 C
0.083 2.522 C
T
R
j T
th1
P
(t)
tot
C
th1
C
th2
R
C
th,n
th,n
th1
th2
th3
th4
th5
th6
0.0001878 0.0001878 Ws/K
0.0007106 0.0007106
0.000988 0.000988
0.002791 0.002791
0.007285 0.007401
0.063 0.412
External Heatsink
T
case
amb
Rev.2.6 Page 4
2005-09-21
SPP11N60C3
SPI11N60C3, SPA11N60C3
1 Power dissipation
P
= f (T
tot
tot
P
140
W
120
110
100
90
80
70
60
50
40
30
20
10
)
C
SPP11N60C3
0
0 20 40 60 80 100 120
°C
2 Power dissipation FullPAK
= f (T
P
tot
35
W
25
tot
P
20
15
10
160
T
C
)
C
5
0
0 20 40 60 80 100 120
°C
160
T
C
3 Safe operating area
= f ( VDS )
I
D
parameter : D = 0 , T
2
10
A
1
10
D
I
0
10
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
0
10
10
-1
-2
10
10
C
1
=25°C
10
4 Safe operating area FullPAK
= f (V
I
D
parameter: D = 0, T
10
A
10
D
I
10
10
2
V
3
10
V
DS
10
)
DS
= 25°C
C
2
1
0
tp = 0.001 ms
tp = 0.01 ms
0
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
10
1
10
2
V
3
10
V
DS
-1
-2
10
Rev.2.6 Page 5
2005-09-21
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