INFINEON SPP08N80C3, SPA08N80C3 User Manual
Final data
)
j
A
j
A
j
g
SPP08N80C3
SPA08N80C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type Package Ordering Code
SPP08N80C3 P-TO220-3-1 Q67040_S4436
SPA08N80C3 P-TO220-3-31 Q67040-S4437
Marking
08N80C3
08N80C3
V
DS
R
DS(on
I
D
P-TO220-3-31 P-TO220-3-1
P-TO220-3-31
3
2
1
800 V
0.65 Ω
8 A
Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current, tp limited by T
Avalanche energy, single pulse
I
=1.6A, V
D
Avalanche energy, repetitive t
I
=8A, V
D
Avalanche current, repetitive t
DD
DD
=50V
=50V
limited by T
AR
limited by T
R
max
jmax
max
2)
I
I
E
E
I
Gate source voltage V
Gate source voltage AC (f >1Hz)
Power dissipation, T
= 25°C P
C
V
D
D puls
AS
AR
R
GS
GS
tot
SPP
8
5.1
24 24 A
340 340 mJ
0.2 0.2
8 8 A
±20 ±20 V
±30 ±30
104 40 W
SPA
1)
8
5.1
A
1)
Operating and storage temperature T
Page 1
T
,
st
-55...+150 °C
2003-07-02
SPP08N80C3
)
Final data
Maximum Ratings
Parameter Symbol Value Unit
SPA08N80C3
Drain Source voltage slope
V
= 640 V, I
DS
= 8 A, T
D
= 125 °C
j
dv/dt 50 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case
R
Thermal resistance, junction - case, FullPAK R
Thermal resistance, junction - ambient, leaded
R
Thermal resistance, junction - ambient, FullPAK R
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
3)
T
thJC
thJC_FP
thJA
thJA_FP
sold
- - 1.2 K/W
- - 3.8
- - 62
- - 80
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage
Drain-Source avalanche
V
(BR)DSS
V
(BR)DS
V
=0V, ID=0.25mA 800 - - V
GS
V
=0V, ID=8A - 870 -
GS
breakdown voltage
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate input resistance
R
GS(th
DSS
GSS
DS(on)
G
I
=470µA, V
D
VDS=800V, V
T
=25°C
j
T
=150°C
j
VGS=20V, V
V
=10V, ID=5.1A
GS
T
=25°C
j
T
=150°C
j
f=1MHz, open drain - 0.7 -
Page 2
GS=VDS
=0V,
GS
=0V - - 100 nA
DS
2.1 3 3.9
-
-
-
-
0.5
-
0.56
1.5
µA
20
200
Ω
0.65
-
2003-07-02
SPP08N80C3
(
)
Final data
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
SPA08N80C3
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
4)
C
energy related
Effective output capacitance,
5)
C
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
fs
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
f
gs
gd
g
VDS≥2*I
I
D
VGS=0V, V
f=1MHz
D*RDS(on)max
=5.1A
DS
=25V,
,
- 5.5 - S
- 1100 - pF
- 500 -
- 25 -
V
=0V,
GS
V
=0V to 480V
DS
- 31.8 -
- 70 -
VDD=400V, V
I
=8A,
D
R
=10Ω
G
=0/10V,
GS
- 25 - ns
- 15 -
- 65 75
- 7 10
V
=640V, ID=8A - 4.6 - nC
DD
- 21 -
V
=640V, ID=8A,
DD
V
=0 to 10V
GS
- 40 52
V
Gate plateau voltage V
1
Limited only by maximum temperature
2
Repetitve avalanche causes additional power losses that can be calculated as P
3
Soldering temperature for TO-263: 220°C, reflow
4
C
is a fixed capacitance that gives the same stored energy as C
o(er)
5
C
is a fixed capacitance that gives the same charging time as C
o(tr)
plateau
=640V, ID=8A - 6 - V
DD
=EAR*f.
AV
Page 3
oss
while V
oss
while V
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
DS
2003-07-02
DSS
DSS
.
.
SPP08N80C3
Final data
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
T
Inverse diode continuous
I
S
=25°C - - 8 A
C
forward current
SPA08N80C3
Inverse diode direct current,
I
SM
- - 24
pulsed
V
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
dirr/dt
SD
rr
rr
rrm
=0V, IF=IS - 1 1.2 V
GS
V
=640V, IF=IS ,
R
di
/dt=100A/µs
F
- 550 - ns
- 7 - µC
- 24 - A
T
=25°C - 500 - A/µs
j
recovery current
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
SPP SPP
0.017 0.017 K/W C
0.032 0.032 C
0.06 0.06 C
0.245 0.189 C
0.266 0.414 C
0.101 2.518 C
SPA SPA
th1
th2
th3
th4
th5
th6
0.0001741 0.0001741 Ws/K
0.0006598 0.0006598
0.0009193 0.0009193
0.002607 0.002607
0.005878 0.007619
0.051 0.412
T
R
j T
th1
P
(t)
tot
C
th1
C
th2
C
Page 4
R
th,n
th,n
T
case
amb
External Heatsink
2003-07-02
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