INFINEON SPP08N50C3, SPI08N50C3, SPA08N50C3 User Manual
SPP08N50C3, SPI08N50C3
j
A
j
A
j
g
SPA08N50C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
VDS @ T
R
DS(on)
I
D
• Ultra low gate charge
• Periodic avalanche rated
PG-TO220FP PG-TO262 PG-TO220
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
P-TO220-3-31
3
2
1
• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
Type Package Ordering Code
SPP08N50C3 PG-TO220 Q67040-S4567
SPI08N50C3 PG-TO262 Q67040-S4568
Marking
08N50C3
08N50C3
jmax
560 V
0.6 Ω
7.6 A
SPA08N50C3 PG-TO220FP SP000216306
Maximum Ratings
Parameter
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current, tp limited by T
max
Avalanche energy, single pulse
I
=5.5A, V
D
Avalanche energy, repetitive t
I
=7.6A, V
D
Avalanche current, repetitive t
DD
DD
=50V
=50V
limited by T
AR
limited by T
R
jmax
max
2)
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, T
= 25°C P
C
08N50C3
Symbol Value Unit
I
D
I
Dpuls
E
AS
E
AR
I
R
V
GS
V
GS
tot
SPP_I
7.6
4.6
22.8 22.8 A
230 230 mJ
0.5 0.5
7.6 7.6 A
±20 ±20 V
±30 ±30
83 32 W
SPA
7.6
4.6
A
1)
1)
Operating and storage temperature T
Reverse diode dv/dt
Rev. 2.9 Page 1
6)
,
T
st
-55...+150 °C
dv/dt 15 V/ns
2007-08-30
Maximum Ratings
SPP08N50C3, SPI08N50C3
SPA08N50C3
Parameter
Drain Source voltage slope
V
= 400 V, I
DS
= 7.6 A, T
D
= 125 °C
j
Symbol Value Unit
dv/dt 50 V/ns
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK R
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK R
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s
3)
Symbol Values Unit
R
thJC
thJC_FP
R
thJA
thJA FP
T
sold
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions Values Unit
min. typ. max.
- - 1.5 K/W
- - 3.9
- - 62
- - 80
- - 260 °C
min. typ. max.
Drain-source breakdown voltage
Drain-Source avalanche
V
V
breakdown voltage
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate input resistance
R
(BR)DSS
(BR)DS
GS(th)
DSS
GSS
DS(on)
G
V
=0V, ID=0.25mA 500 - - V
GS
V
=0V, ID=7.6A - 600 -
GS
ID=350µA, VGS=V
VDS=500V, V
=25°C
T
j
=150°C
T
j
VGS=20V, V
V
=10V, ID=4.6A
GS
T
=25°C
j
=150°C
T
j
f=1MHz, open drain - 1.2 -
=0V,
GS
=0V - - 100 nA
DS
2.1 3 3.9
DS
-
-
-
-
0.5
-
0.5
1.5
100
0.6
µA
1
Ω
-
Rev. 2.9 Page 2
2007-08-30
Electrical Characteristics
SPP08N50C3, SPI08N50C3
SPA08N50C3
Parameter
Symbol Conditions Values Unit
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
4)
C
energy related
Effective output capacitance,
5)
C
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
fs
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
f
V
≥2*ID*R
DS
I
=4.6A
D
VGS=0V, V
f=1MHz
VGS=0V, V
VDD=380V, V
I
=7.6A,
D
R
=12Ω
G
DS
DS
min. typ. max.
DS(on)max
=25V,
,
- 6 - S
- 750 - pF
- 350 -
- 12 -
=400 - 56 -
- 30 -
GS
=0/10V,
- 6 - ns
- 5 -
- 60 -
- 7 -
Gate Charge Characteristics
Gate to source charge
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
1
Limited only by maximum temperature
2
Repetitve avalanche causes additional power losses that can be calculated as P
3
Soldering temperature for TO-263: 220°C, reflow
4
is a fixed capacitance that gives the same stored energy as C
C
o(er)
5
is a fixed capacitance that gives the same charging time as C
C
o(tr)
6
ISD<=I
Identical low-side and high-side switch.
, di/dt<=400A/us, V
D
DClink
Q
gs
gd
g
(plateau)
=400V, V
peak<VBR, DSS
V
=400V, ID=7.6A - 3 - nC
DD
V
=400V, ID=7.6A,
DD
V
=0 to 10V
GS
V
=400V, ID=7.6A - 5 - V
DD
while V
oss
while V
oss
, Tj<T
j,max
.
- 17 -
- 32 -
=EAR*f.
AV
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
DS
DSS
DSS
.
.
Rev. 2.9 Page 3
2007-08-30
Electrical Characteristics
SPP08N50C3, SPI08N50C3
SPA08N50C3
Parameter
Inverse diode continuous
Symbol Conditions Values Unit
I
S
forward current
Inverse diode direct current,
I
SM
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
SD
rr
rr
rrm
dirr/dt
recovery current
Typical Transient Thermal Characteristics
Symbol
SPP_I SPP_I
Value Unit Symbol Value Unit
SPA SPA
min. typ. max.
T
=25°C - - 7.6 A
C
- - 22.8
V
=0V, IF=I
GS
V
=400V, IF=IS ,
R
/dt=100A/µs
di
F
S
- 1 1.2 V
- 370 - ns
- 3.6 - µC
- 25 - A
T
=25°C - 700 - A/µs
j
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
0.024 0.024 K/W C
0.046 0.046 C
0.085 0.085 C
0.308 0.195 C
0.317 0.45 C
0.112 2.511 C
T
R
j T
th1
P
(t)
tot
C
th1
C
th2
R
C
th,n
th,n
th1
th2
th3
th4
th5
th6
0.00012 0.00012 Ws/K
0.0004578 0.0004578
0.000645 0.000645
0.001867 0.001867
0.004795 0.007558
0.045 0.412
External Heatsink
T
case
amb
Rev. 2.9 Page 4
2007-08-30
SPP08N50C3, SPI08N50C3
SPA08N50C3
1 Power dissipation
P
= f (T
tot
tot
P
100
W
80
70
60
50
40
30
20
10
)
C
SPP08N50C3
0
0 20 40 60 80 100 120
°C
2 Power dissipation FullPAK
P
= f (T
tot
35
W
25
tot
P
20
15
10
160
T
C
)
C
5
0
0 20 40 60 80 100 120
°C
T
150
C
3 Safe operating area
I
= f ( VDS )
D
parameter : D = 0 ,
2
10
A
1
10
D
I
0
10
-1
10
-2
10
0
10
T
C
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
1
10
=25°C
10
4 Safe operating area FullPAK
I
= f (V
D
parameter: D = 0,
10
A
10
D
I
10
10
2
V
3
10
V
DS
10
)
DS
T
= 25°C
C
2
1
0
tp = 0.001 ms
0
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
1
10
10
2
V
3
10
V
DS
-1
-2
10
Rev. 2.9 Page 5
2007-08-30
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