INFINEON SPA07N60CFD User Manual
SPA07N60CFD
CoolMOSTM Power Transistor
Features
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
• Extreme dv /dt rated
• High peak current capability
• Qualified according to JEDEC
CoolMOS CFD designed for:
• Soft switching PWM Stages
• LCD & CRT TV
Type
SPA07N60CFD
Maximum ratings, at T
1)
for target applications
Package Marking
PG-TO220FP 07N60CFD
=25 °C, unless otherwise specified
j
Product Summary
VDS @T
R
I
jmax
DS(on),max
D
650 V
0.7
6.6 A
PG-TO220 FP
Ω
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
2)
3)
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
3),4)
3),4)
Drain source voltage slope dv /dt
Reverse diode dv /dt dv /dt V/ns
Maximum diode commutation speed di /dt A/µs
Gate source voltage
I
D
I
D,pulse
E
AS
E
AR
I
AR
V
GS
TC=25 °C
T
=100 °C
C
TC=25 °C
ID=3.3 A, VDD=50 V
ID=6.6 A, VDD=50 V
=6.6 A, VDS=480 V,
I
D
T
=125°C
j
=6.6 A, VDS=480 V,
I
S
T
=125 °C
j
static V
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P
tot
, T
T
j
TC=25 °C
stg
Value
6.6
4.3
17
230 mJ
0.5
6.6
80
40
600
±20
±30
32
-55 ... 150
A
A
V/ns
W
°C
Mounting torque M3 & M3.5 screws 50 Ncm
Rev. 1.0 page 1 2007-01-26
SPA07N60CFD
Parameter Symbol Conditions Unit
Values
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction ambient
Soldering temperature, wave
soldering only allowed at leads
Electrical characteristics, at T
R
thJC
R
thJA
T
sold
=25 °C, unless otherwise specified
j
leaded - - 62
1.6 mm (0.063 in.)
from case for 10 s
- - 3.9 K/W
- - 260 °C
Static characteristics
Drain-source breakdown voltage
Avalanche breakdown voltage
Gate threshold voltage
V
(BR)DSSVGS
V
(BR)DSVGS
V
GS(th)
=0 V, ID=250 µA
=0 V, ID=6.6 A
VDS=VGS, ID=300 µA
600 - - V
- 700 -
345
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
I
I
R
R
g
DSS
GSS
DS(on)
G
fs
VDS=600 V, VGS=0 V,
T
=25 °C
j
V
=600 V, VGS=0 V,
DS
T
=150 °C
j
VGS=20 V, VDS=0 V
VGS=10 V, ID=4.6 A,
T
=25 °C
j
V
=10 V, ID=4.6 A,
GS
T
=150 °C
j
- 0.6 - µA
- 630 -
- - 100 nA
- 0.59 0.7
- 1.6 -
f =1 MHz, open drain - 1.2 -
|VDS|>2|ID|R
I
=4.6 A
D
DS(on)max
,
- 5.0 - S
Ω
Rev. 1.0 page 2 2007-01-26
SPA07N60CFD
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance, energy
5)
related
Effective output capacitance, time
6)
related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
C
C
C
C
t
t
t
t
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
f
=0 V, VDS=25 V,
V
GS
f =1 MHz
=0 V, VDS=0 V
V
GS
to 480 V
V
=400 V,
DD
V
=10 V, ID=6.6 A,
GS
=6.8 Ω
R
G
- 790 - pF
- 260 -
-16-
-30-
-55-
-12-ns
-25-
-36-
-9-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
1)
J-STD20 and JESD22
2)
Limited only by maximum temperature
3)
Pulse width tp limited by T
4)
Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.
5)
C
is a fixed capacitance that gives the same stored energy as C
o(er)
6)
C
is a fixed capacitance that gives the same charging time as C
o(tr)
j,max
Q
Q
Q
V
gs
gd
g
plateau
V
=480 V, ID=6.6A,
DD
V
=0 to 10 V
GS
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
- 6.6 - nC
-20-
-3547
- 7.2 - V
DSS.
DSS.
Rev. 1.0 page 3 2007-01-26
SPA07N60CFD
Parameter Symbol Conditions Unit
Values
min. typ. max.
Reverse Diode
2)
Diode continuous forward current
Diode pulse current
3)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse recovery
current
I
S
I
S,pulse
V
SD
t
rr
Q
rr
I
rrm
/ dtTj=25 °C
di
rr
=25 °C
T
C
VGS=0 V, IF=IS,
T
=25 °C
j
V
=480 V, IF=IS,
R
di
/dt =100 A/µs
F
- - 6.6 A
--17
- 1.0 1.2 V
- 104 - ns
- 0.5 - µC
-8-A
- 1000 - A/µs
Rev. 1.0 page 4 2007-01-26
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