INFINEON SPA06N60C3 User Manual
CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• High peak current capability
• Ultra low effective capacitances
Product Summary
VDS@ T
R
DS(on),max
1)
I
D
j,max
SPA06N60C3
650 V
0.75
6.2 A
Ω
• Extreme dv /dt rated
PG-TO220-3-31
• Improved transconductance
• Fully isolated package (2500 V AC; 1 minute)
Type Package Ordering Code Marking
SPA06N60C3 PG-TO220-3-31
Maximum ratings, at T
=25 °C, unless otherwise specified
j
SP000216301
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
1)
1)
I
D
I
D,pulse
TC=25 °C
T
=100 °C
C
TC=25 °C
06N60C3
Value
6.2
3.9
18.6
A
ID=3.1 A, VDD=50 V
ID=6.2 A, VDD=50 V
200 mJ
0.5
6.2
=6.2 A, VDS=480 V,
I
D
T
=125 °C
j
static V
AC (f >1 Hz)
TC=25 °C
stg
50
±20
±30
32
-55 ... 150
A
V/ns
W
°C
1),2)
1)
E
AS
E
AR
I
AR
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
AR
AR
Drain source voltage slope dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
Reverse diode dv/dt dv/dt 15 V/ns
5)
V
GS
V
GS
P
tot
T
, T
j
Rev. 1.5 page 1 2005-09-21
SPA06N60C3
Parameter Symbol Conditions Unit
Values
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction ambient
Soldering temperature, wavesoldering
Electrical characteristics, at T
R
thJC
R
thJA
T
sold
=25 °C, unless otherwise specified
j
leaded - - 80
1.6 mm (0.063 in.)
from case for 10 s
- - 3.92 K/W
- - 260 °C
Static characteristics
Drain-source breakdown voltage
Avalanche breakdown voltage
V
(BR)DSSVGS
V
(BR)DSVGS
=0 V, ID=250 µA
=0 V, ID=6.2 A
600 - - V
- 700 -
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V
I
I
R
R
g
DSS
GSS
GS(th)
DS(on)
G
fs
VDS=VGS, ID=0.26 mA
VDS=600 V, VGS=0 V,
T
=25 °C
j
V
=600 V, VGS=0 V,
DS
T
=150 °C
j
VGS=20 V, VDS=0 V
VGS=10 V, ID=3.9 A,
T
=25 °C
j
V
=10 V, ID=3.9 A,
GS
T
=150 °C
j
f =1 MHz, open drain
|VDS|>2|ID|R
I
=3.9 A
D
DS(on)max
,
2.1 3 3.9
- 0.1 1 µA
- - 100
- - 100 nA
- 0.68 0.75
- 1.82 -
-1-
- 5.6 - S
Ω
Rev. 1.5 page 2 2005-09-21
SPA06N60C3
y
Parameter Symbol Conditions Unit
Values
min. typ. max.
namic characteristics
D
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance, energy
related
3)
Effective output capacitance, time
related
4)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
C
C
C
C
t
t
t
t
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
f
=0 V, VDS=25 V,
V
GS
f =1 MHz
V
=0 V, VDS=0 V
GS
to 480 V
V
=480 V,
DD
V
=10 V, ID=6.2 A,
GS
R
=12 Ω
G
- 620 - pF
- 200 -
-17-
-28-
-47-
-7-ns
-12-
-52-
-10-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
1)
Pulse width limited by maximum temperature T
2)
Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.
3)
C
is a fixed capacitance that gives the same stored energy as C
o(er)
4)
C
is a fixed capacitance that gives the same charging time as C
o(tr)
5)
ISD<=ID, di/dt<=400A/us, V
Identical low-side and high-side switch.
DClink
Q
Q
Q
V
=400V, V
gs
gd
g
plateau
j,max
peak<VBR, DSS
=480 V, ID=6.2 A,
V
DD
V
=0 to 10 V
GS
only
, Tj<T
- 3.3 - nC
-12-
-2431
- 5.5 - V
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
.
j,max
DSS.
DSS.
Rev. 1.5 page 3 2005-09-21
SPA06N60C3
y
Parameter Symbol Conditions Unit
Values
min. typ. max.
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
T
pical Transient Thermal Characteristics
I
S
I
S,pulse
V
SD
t
rr
Q
rr
I
rrm
T
=25 °C
C
VGS=0 V, IF=6.2 A,
T
=25 °C
j
=480 V, IF=IS,
V
R
di
/dt =100 A/µs
F
- - 6.2 A
- - 18.6
- 0.97 1.2 V
- 400 - ns
- 3.5 - µC
-25-A
Symbol Value Unit Symbol Value Unit
typ. typ.
R
th1
R
th2
R
th3
R
th4
R
th5
0.034 K/W C
0.15 C
0.388 C
0.713 C
1.6 C
th1
th2
th3
th4
th5
0.0000507 Ws/K
0.00045
0.00117
0.0114
0.939
Rev. 1.5 page 4 2005-09-21
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