SN 7002
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• V
Type
SN 7002 60 V 0.19 A 5
Type Ordering Code Tape and Reel Information
GS(th)
= 0.8...2.0V
V
DS
I
D
R
DS(on)
Ω
Package Marking
SOT-23 sSG
SN 7002 Q67000-S063 E6327
Pin 1 Pin 2 Pin 3
G S D
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
R
GS
= 20 k
Ω
Gate source voltage
Symbol Values Unit
V
V
DS
DGR
60 V
60
V
GS
±
20
ESD Sensitivity (HBM) as per MIL-STD 883 Class 1
Continuous drain current
T
= 25 ˚C
A
DC drain current, pulsed
T
= 25 ˚C
A
Power dissipation
T
= 25 ˚C
A
I
D
I
Dpuls
P
tot
0.19
0.76
0.36
A
W
Data Sheet 1 05.99
Maximum Ratings
SN 7002
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
Therminal resistance, chip-substrate- reverse side
1)
Symbol Values Unit
T
j
T
stg
R
thJA
R
thJSR
-55 ... + 150 ˚C
-55 ... + 150
≤
350 K/W
≤
285
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm
Electrical Characteristics,
Parameter Symbol Values Unit
Static Characteristics
at
T
= 25˚C, unless otherwise specified
j
min. typ. max.
Drain- source breakdown voltage
V
= 0 V,
GS
I
= 0.25 mA,
D
T
= 25 ˚C
j
Gate threshold voltage
V
GS
V
=
DS, ID
= 1 mA
Zero gate voltage drain current
V
DS
V
DS
= 60 V,
= 60 V,
V
V
= 0 V,
GS
= 0 V,
GS
T
= 25 ˚C
j
T
= 125 ˚C
j
Gate-source leakage current
V
= 20 V,
GS
V
DS
= 0 V
Drain-Source on-state resistance
V
GS
V
GS
= 10 V,
= 4.5 V,
I
= 0.5 A
D
I
= 0.05 A
D
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
60 - -
0.8 1.4 2
-
-
0.1
-
1
5
- 1 10
-
-
2
3
5
7.5
V
µA
nA
Ω
Data Sheet 2 05.99
SN 7002
Electrical Characteristics,
Parameter Symbol Values Unit
Dynamic Characteristics
Transconductance
V
≥
2
DS
I
*
D * RDS(on)max, ID
Input capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Output capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Reverse transfer capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Turn-on delay time
V
DD
R
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
Rise time
V
DD
R
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
Turn-off delay time
V
DD
R
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
Fall time
V
DD
R
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
at
T
= 25˚C, unless otherwise specified
j
g
fs
= 0.2 A
C
iss
C
oss
C
rss
t
d(on)
I
= 0.29 A
D
t
r
I
= 0.29 A
D
t
d(off)
I
= 0.29 A
D
t
f
I
= 0.29 A
D
min. typ. max.
S
0.1 0.2 pF
- 60 80
- 15 25
- 15 25
ns
- 5 8
- 5 8
- 12 16
- 13 17
Data Sheet 3 05.99
SN 7002
Electrical Characteristics,
Parameter Symbol Values Unit
Reverse Diode
Inverse diode continuous forward current
T
= 25 ˚C
A
Inverse diode direct current,pulsed
T
= 25 ˚C
A
Inverse diode forward voltage
V
= 0 V,
GS
I
= 0.5 A,
F
at
T
= 25 ˚C
j
T
= 25˚C, unless otherwise specified
j
I
S
I
SM
V
SD
min. typ. max.
A
- - 0.19
- - 0.76
V
- 1 1.2
Data Sheet 4 05.99
SN 7002
Power dissipation
P
= ƒ(
T
tot
P
tot
)
A
0.40
W
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
0 20 40 60 80 100 120 ˚C 160
Drain current
I
= ƒ(
T
D
parameter:
I
D
T
A
)
A
≥
V
0.20
A
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0 20 40 60 80 100 120 ˚C 160
GS
10 V
T
A
Safe operating area
D
parameter :
= 0.01,
I
D
T
=f(
V
=25˚C
C
DS
)
Drain-source breakdown voltage
V
(BR)DSS
V
(BR)DSS
= ƒ(
T
)
j
71
V
68
66
64
62
60
58
56
54
-60 -20 20 60 100 ˚C 160
T
j
Data Sheet 5 05.99
SN 7002
Typ. output characteristics
ƒ(
I
=
V
D
parameter:
I
D
)
DS
t
= 80 µs ,
p
0.45
P
= 0W
tot
k
i
l
h
b
j
A
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
f
g
T
= 25 ˚C
j
e
V
d
a
c
[V]
GS
a 2.0
b 2.5
c 3.0
d 3.5
e 4.0
f 4.5
g 5.0
h 6.0
i 7.0
j 8.0
k 9.0
l 10.0
V
DS
Typ. drain-source on-resistance
R
DS (on)
parameter:
R
DS (on)
ƒ(
=
I
)
D
t
16
= 80 µs,
p
T
= 25 ˚C
j
Ω
12
10
8
6
4
V
[V] =
GS
2
a
b
c
d
e
f
2.0
2.5
3.0
3.5
0
0.00 0.04 0.08 0.12 0.16 A 0.24
4.0
4.5
5.0
g
6.0
a
c
d
e
f
g
l
k
j
i
8.0
h
j
k
l
9.0
10.0
b
I
D
h
i
7.0
Typ. transfer characteristics
parameter:
I
D
t
= 80 µs
p
1.1
A
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 1 2 3 4 5 6 7 8 V 10
ID = f(V
GS
)
V
GS
Typ. forward transconductance
parameter:
g
fs
t
= 80 µs,
p
0.40
S
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 A 1.0
g
fs
= f (
I
)
D
I
D
Data Sheet 6 05.99
SN 7002
Drain-source on-resistance
R
DS (on)
parameter:
R
DS (on)
= ƒ(
T
)
j
I
16
= 0.5 A,
D
V
GS
Ω
12
10
8
98%
6
4
typ
2
0
-60 -20 20 60 100 ˚C 160
= 10 V
Gate threshold voltage
V
parameter:
V
T
j
GS (th)
GS(th)
= ƒ(
T
)
j
V
=
V
,
I
GS
4.6
V
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
-60 -20 20 60 100 ˚C 160
DS
= 1 mA
D
98%
typ
2%
T
j
Typ. capacitances
C = f (V
parameter:
C
)
DS
V
=0V, f = 1 MHz
GS
3
10
pF
2
10
1
10
0
10
0 5 10 15 20 25 30 V 40
Forward characteristics of reverse diode
I
= ƒ(
V
F
parameter:
I
F
C
iss
C
oss
C
rss
V
DS
)
SD
Tj, t
= 80 µs
p
0
10
A
-1
10
-2
10
T
= 25 ˚C typ
j
T
= 150 ˚C typ
j
T
= 25 ˚C (98%)
j
T
= 150 ˚C (98%)
j
-3
10
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
V
SD
Data Sheet 7 05.99
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