Infineon SN7002 Schematic [ru]
SN 7002
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• V
Type
SN 7002 60 V 0.19 A 5
Type Ordering Code Tape and Reel Information
GS(th)
= 0.8...2.0V
V
DS
I
D
R
DS(on)
Ω
Package Marking
SOT-23 sSG
SN 7002 Q67000-S063 E6327
Pin 1 Pin 2 Pin 3
G S D
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
R
GS
= 20 k
Ω
Gate source voltage
Symbol Values Unit
V
V
DS
DGR
60 V
60
V
GS
±
20
ESD Sensitivity (HBM) as per MIL-STD 883 Class 1
Continuous drain current
T
= 25 ˚C
A
DC drain current, pulsed
T
= 25 ˚C
A
Power dissipation
T
= 25 ˚C
A
I
D
I
Dpuls
P
tot
0.19
0.76
0.36
A
W
Data Sheet 1 05.99
Maximum Ratings
SN 7002
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
Therminal resistance, chip-substrate- reverse side
1)
Symbol Values Unit
T
j
T
stg
R
thJA
R
thJSR
-55 ... + 150 ˚C
-55 ... + 150
≤
350 K/W
≤
285
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm
Electrical Characteristics,
Parameter Symbol Values Unit
Static Characteristics
at
T
= 25˚C, unless otherwise specified
j
min. typ. max.
Drain- source breakdown voltage
V
= 0 V,
GS
I
= 0.25 mA,
D
T
= 25 ˚C
j
Gate threshold voltage
V
GS
V
=
DS, ID
= 1 mA
Zero gate voltage drain current
V
DS
V
DS
= 60 V,
= 60 V,
V
V
= 0 V,
GS
= 0 V,
GS
T
= 25 ˚C
j
T
= 125 ˚C
j
Gate-source leakage current
V
= 20 V,
GS
V
DS
= 0 V
Drain-Source on-state resistance
V
GS
V
GS
= 10 V,
= 4.5 V,
I
= 0.5 A
D
I
= 0.05 A
D
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
60 - -
0.8 1.4 2
-
-
0.1
-
1
5
- 1 10
-
-
2
3
5
7.5
V
µA
nA
Ω
Data Sheet 2 05.99
SN 7002
Electrical Characteristics,
Parameter Symbol Values Unit
Dynamic Characteristics
Transconductance
V
≥
2
DS
I
*
D * RDS(on)max, ID
Input capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Output capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Reverse transfer capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Turn-on delay time
V
DD
R
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
Rise time
V
DD
R
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
Turn-off delay time
V
DD
R
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
Fall time
V
DD
R
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
at
T
= 25˚C, unless otherwise specified
j
g
fs
= 0.2 A
C
iss
C
oss
C
rss
t
d(on)
I
= 0.29 A
D
t
r
I
= 0.29 A
D
t
d(off)
I
= 0.29 A
D
t
f
I
= 0.29 A
D
min. typ. max.
S
0.1 0.2 pF
- 60 80
- 15 25
- 15 25
ns
- 5 8
- 5 8
- 12 16
- 13 17
Data Sheet 3 05.99
Loading...