INFINEON SMBD7000, MMBD7000 User Manual
查询SMBD7000供应商
Silicon Switching Diode Array
• For high-speed switching applications
SMBD7000/MMBD7000
SMBD7000/MMBD7000...
3
D 1
D 2
1
2
Type Package Configuration Marking
SMBD7000/MMBD7000 SOT23 series s5C
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Diode reverse voltage V
Peak reverse voltage V
Forward current I
Non-repetitive peak surge forward current
t = 1 µs
t = 1 s
Total power dissipation
T
≤ 28°C
S
Junction temperature T
Storage temperature T
Symbol Value Unit
R
RM
F
I
FSM
100 V
100
200 mA
A
4.5
0.5
P
tot
j
stg
330 mW
150 °C
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1)
R
thJS
≤ 360
K/W
SMBD7000/MMBD7000
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
1
Mar-10-2004
SMBD7000/MMBD7000...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
DC Characteristics
Symbol Values Unit
min. typ. max.
Breakdown voltage
= 100 µA
I
(BR)
Reverse current
= 50 V
V
R
= 100 V
V
R
= 50 V, TA = 150 °C
V
R
Forward voltage
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 150 mA
I
F
AC Characteristics
Diode capacitance
V
= 0 V, f = 1 MHz
R
V
I
R
V
C
(BR)
F
T
100 - - V
-
-
-
550
670
-
750
-
-
-
-
-
-
-
-
-
0.3
0.5
100
700
820
1000
1100
1250
µA
- - 2 pF
mV
Reverse recovery time
I
= 10 mA, IR = 10 mA, measured at IR = 1mA,
F
R
= 100 Ω
L
Test circuit for reverse recovery time
D.U.T.
Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns,
R
Ι
F
Oscillograph
Oscillograph: R = 50Ω, t
EHN00019
t
rr
- - 4 ns
= 50Ω
i
= 0.35ns, C ≤ 1pF
r
2
Mar-10-2004
Loading...