INFINEON SKW25N120 User Manual
SKW25N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 40lower E
compared to previous generation
off
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1
for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
I
V
CE
E
C
Tj Marking Package
off
C
G
E
PG-TO-247-3-21
(TO-247AC)
SKW25N120 1200V 25A 2.9mJ
150°C
K25N120 PG-TO-247-3-21
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
DC collector current
= 25°C
T
C
T
= 100°C
C
Pulsed collector current, tp limited by T
I
jmax
Turn off safe operating area
≤ 1200V, Tj ≤ 150°C
V
CE
Diode forward current
T
= 25°C
C
= 100°C
T
C
Diode pulsed current, tp limited by T
I
jmax
Gate-emitter voltage
Short circuit withstand time2
= 15V, 100V≤V
V
GE
≤1200V, Tj ≤ 150°C
CC
Power dissipation
= 25°C
T
C
Operating junction and storage temperature
Soldering temperature,
V
CE
I
C
Cpuls
-
I
F
Fpuls
V
GE
tSC
P
tot
T
j
T
s
, T
stg
1200 V
46
A
25
84
84
42
25
80
±20
10
V
µs
313 W
-55...+150
°C
260
wavesoldering, 1.6mm (0.063 in.) from case for 10s
1
J-STD-020 and JESD-022
2
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1 Rev. 2_1 Apr 06
SKW25N120
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
R
IGBT thermal resistance,
thJC
junction – case
Diode thermal resistance,
R
thJCD
junction – case
R
Thermal resistance,
thJA
junction – ambient
Electrical Characteristic, at T
= 25 °C, unless otherwise specified
j
Parameter Symbol Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
.
Gate-emitter leakage current
Transconductance
V
(BR)CESVGE
V
V
V
I
CES
I
GES
g
fs
VGE = 15V, IC=25A
CE(sat)
VGE=0V, IF=25A
F
GE(th)
VCE=1200V,VGE=0V
VCE=0V,VGE=20V
VCE=20V, IC=25A
=0V,
=1500µA
I
C
T
=25°C
j
=150°C
T
j
T
=25°C
j
=150°C
T
j
=1000µA,
I
C
V
CE=VGE
T
=25°C
j
T
=150°C
j
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
C
C
C
Q
L
iss
oss
rss
Gate
E
V
=25V,
CE
V
=0V,
GE
f=1MHz
VCC=960V, IC=25A
V
=15V
GE
-
Measured 5mm (0.197 in.) from case
I
Short circuit collector current1)
C(SC)
V
=15V,t
GE
100V≤V
≤ 150°C
T
j
0.4
K/W
1.15
40
Value
Unit
min. typ. max.
1200 - -
2.5
-
-
3.1
3.7
2.0
1.75
3.6
4.3
2.5
V
3 4 5
-
-
-
-
350
1400
µA
- - 100 nA
20 - S
- 2150 2600
pF
- 260 310
- 110 130
- 225 300 nC
≤10µs
SC
≤1200V,
CC
13
- 240 - A
-
nH
1)
Allowed number of short circuits: <1000; time between short circuits: >1s
Power Semiconductors
2 Rev. 2_1 Apr 06
SKW25N120
Switching Characteristic, Inductive Load, at T
Parameter Symbol Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
tF
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
F
Q
I
di
rr
rrm
rr
Switching Characteristic, Inductive Load, at T
Parameter Symbol Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
1)
Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.
F
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
rr
t
S
tF
Q
rr
I
rrm
di
rr
/dt
/dt
=25 °C
j
T
=25°C,
j
V
=800V,IC=25A,
CC
V
=15/0V,
GE
R
=22Ω,
G
1)
=180nH,
L
σ
1)
C
=40pF
σ
Energy losses include
“tail” and diode
reverse recovery.
=25°C,
T
j
V
=800V, IF=25A,
R
/dt=650A/µs
di
F
=150 °C
j
=150°C
T
j
V
=800V,IC=25A,
CC
V
=15/0V,
GE
=22Ω,
R
G
1)
=180nH,
L
σ
1)
C
=40pF
σ
Energy losses include
“tail” and diode
reverse recovery.
=150°C
T
j
V
=800V, IF=25A,
R
di
/dt=750A/µs
F
Value
Unit
Min. typ. max.
- 45 60
ns
- 40 52
- 730 950
- 30 39
- 2.2 2.9
mJ
- 1.5 2.0
- 3.7 4.9
-
-
-
- 1.0
90
ns
µC
- 20 A
- 470
Value
A/µs
Unit
Min. typ. max.
- 50 60
ns
- 36 43
- 820 990
- 42 50
- 3.8 4.6
mJ
- 2.9 3.8
- 6.7 8.4
-
-
-
- 4.3
280
ns
µC
- 32 A
- 130
A/µs
Power Semiconductors
3 Rev. 2_1 Apr 06
A
SKW25N120
I
00
c
00A
t
=1µs
p
15µs
80A
10A
60A
40A
, COLLECTOR CURRENT
C
I
20A
0A
10Hz 100Hz 1kHz 10kHz 100kHz
f, SWITCHING FREQUENCY
I
c
TC=80°C
TC=110°C
1A
, COLLECTOR CURRENT
C
I
0.1A
Figure 1. Collector current as a function of
switching frequency
≤ 150°C, D = 0.5, V
(T
j
V
= +15V/0V, R
GE
CE
= 22Ω)
G
= 800V,
350W
60A
1V 10V 100V 1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, T
= 25°C, Tj ≤ 150°C)
C
50µs
200µs
1ms
DC
300W
250W
200W
150W
, POWER DISSIPATION
100W
tot
P
50W
0W
25°C 50°C 75°C 100°C 125°C
, CASE TEMPERATURE
T
C
Figure 3. Power dissipation as a function
of case temperature
(T
≤ 150°C)
j
50A
40A
30A
20A
, COLLECTOR CURRENT
C
I
10A
0A
25°C 50°C 75°C 100°C 125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
≤ 15V, Tj ≤ 150°C)
GE
Power Semiconductors
4 Rev. 2_1 Apr 06
Loading...