INFINEON SKW20N60 User Manual
SKW20N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 75% lower E
combined with low conduction losses
compared to previous generation
off
C
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
G
E
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
P-TO-247-3-1
(TO-247AC)
• Very soft, fast recovery anti-parallel EmCon diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
V
CE
SKW20N60 600V 20A 2.4V
I
C
V
CE(sat)
T
j
150°C
Package Ordering Code
TO-247AC Q67040-S4242
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
DC collector current
T
= 25°C
C
T
= 100°C
C
Pulsed collector current, tp limited by T
jmax
Turn off safe operating area
≤ 600V, Tj ≤ 150°C
V
CE
Diode forward current
T
= 25°C
C
= 100°C
T
C
Diode pulsed current, tp limited by T
jmax
Gate-emitter voltage
Short circuit withstand tim e
VGE = 15V, V
≤ 600V, Tj ≤ 150°C
CC
1)
Power dissipation
T
= 25°C
C
Operating junction and storage temperature
V
CE
I
C
I
Cpuls
-
I
F
I
Fpuls
V
GE
t
SC
P
tot
T
j
, T
stg
600 V
40
20
80
80
40
20
80
±20
10
179 W
-55...+150
A
V
µs
°C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
1Jul-02
SKW20N60
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
R
thJC
junction – case
Diode thermal resistance,
R
thJCD
junction – case
Thermal resistance,
R
thJA
TO-247AC 40
junction – ambient
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V
(BR)CES
V
CE(sat)VGE
V
F
V
GE(th)
I
CES
I
GES
g
fs
VGE=0V, IC=500µA
= 15V, IC=20A
=25°C
T
j
T
=150°C
j
VGE=0V, IF=20A
T
=25°C
j
=150°C
T
j
IC=700µA,VCE=V
VCE=600V,VGE=0V
=25°C
T
j
T
=150°C
j
VCE=0V,VGE=20V
VCE=20V, IC=20A
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
C
C
C
Q
L
iss
oss
rss
Gate
E
VCE=25V,
V
=0V,
GE
f=1MHz
VCC=480V, IC=20A
V
=15V
GE
TO-247AC - 13 - nH
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
I
C(SC)
VGE=15V,tSC≤10µs
V
≤ 600V,
CC
T
≤ 150°C
j
min. Typ. max.
600 - -
1.7
-
1.2
-
GE
345
-
-
- - 100 nA
-14-S
- 1100 1320
- 107 128
-6376
- 100 130 nC
- 200 - A
0.7
1.3
Value
2
2.4
1.4
1.25
-
-
K/W
Unit
V
2.4
2.9
1.8
1.65
µA
40
2500
pF
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2Jul-02
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter Symbol Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Tj=25°C,
V
=400V,IC=20A,
CC
=0/15V,
V
GE
R
=16Ω,
G
1)
=180nH,
L
σ
1)
C
=900pF
σ
Energy losses include
“tail” and diode
reverse recovery.
Anti-Parallel Diode Characteri sti c
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
b
t
rr
t
S
t
F
Q
rr
I
rrm
dirr/dt
=25°C,
T
j
V
=200V, IF=20A,
R
di
/dt=200A/µs
F
SKW20N60
Value
min. typ. max.
-3646
-3036
- 225 270
-5465
- 0.44 0.53
- 0.33 0.43
- 0.77 0.96
-
-
-
300
30
270
- 490 - nC
-5.5-A
- 180 -
Unit
ns
mJ
-
ns
-
-
A/µs
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter Symbol Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Tj=150°C
V
=400V,IC=20A,
CC
=0/15V,
V
GE
R
=16Ω,
G
1)
=180nH,
L
σ
1)
C
=900pF
σ
Energy losses include
“tail” and diode
reverse recovery.
Anti-Parallel Diode Characteri sti c
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
b
t
rr
t
S
t
F
Q
rr
I
rrm
dirr/dt
=150°C
T
j
V
=200V, IF=20A,
R
di
/dt=200A/µs
F
Value
min. typ. max.
-3646
Unit
ns
-3036
- 250 300
-6376
- 0.67 0.81
mJ
- 0.49 0.64
- 1.12 1.45
-
-
-
410
45
365
-
ns
-
-
- 1270 - nC
-8.5-A
- 200 -
A/µs
1)
Leakage inductance L
a n d Stray capacity Cσ due to dynamic test circuit in Figure E.
σ
3Jul-02
SKW20N60
110A
I
100A
90A
80A
70A
60A
50A
40A
30A
, COLLECTOR CURRENT
C
I
20A
10A
0A
10Hz 100Hz 1kHz 10kHz 100kHz
TC=80°C
TC=110°C
I
c
c
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(T
≤ 150°C, D = 0.5, VCE = 400V,
j
V
= 0/+15V, RG = 16Ω)
GE
, COLLECTOR CURRENT
I
C
100A
10A
1A
0.1A
1V 10V 100V 1000V
Figure 2. Safe operating area
(D = 0, T
= 25°C, Tj ≤ 150°C)
C
tp=4µs
15µs
50µs
200µs
1ms
DC
200W
180W
160W
140W
120W
100W
80W
60W
, POWER DISSIPATION
tot
P
40W
20W
0W
25°C 50°C 75°C 100°C 125°C
TC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(T
≤ 150°C)
j
50A
40A
30A
20A
, COLLECTOR CURRENT
C
I
10A
0A
25°C 50°C 75°C 100°C 125°C
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
4Jul-02
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