Infineon SKP06N60, SKA06N60 Data Sheet
SKP06N60
SKA06N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 75% lower E
compared to previous generation
off
combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for: Motor controls, Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
• Isolated TO-220, 2.5kV, 60s
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1
for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
I
V
CE
V
C
Tj Marking Package
CE(sat)
C
G
E
PG-TO-220-3-1
(TO-220AB)
PG-TO-220-3-31 / -111
(FullPAK)
SKP06N60 600V 6A 2.3V
SKA06N60 600V 5A 2.3V
150°C
150°C
Maximum Ratings
Collector-emitter voltage
DC collector current
= 25°C
T
C
= 100°C
T
C
Pulsed collector current, tp limited by T
Turn off safe operating area V
≤ 600V, Tj ≤ 150°C
CE
I
jmax
Diode forward current
= 25°C
T
C
= 100°C
T
C
Diode pulsed current, tp limited by T
I
jmax
Gate-emitter voltage
Short circuit withstand time2
= 15V, V
V
GE
≤ 600V, Tj ≤ 150°C
CC
Power dissipation
= 25°C
T
C
Mounting Torque, Screw: M2.5 (Fullpak), M3 (TO220)3
Operating junction and storage temperature
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
K06N60 PG-TO-220-3-1
K06N60 PG-TO-220-3-31 / -111
Value
Parameter Symbol
SKP06N60
V
CE
I
C
600 600 V
SKA06N60
12
6.9
Cpuls
-
I
F
24 24
24 24
12
6
Fpuls
V
GE
24 24
±20 ±20
tSC
10 10
P
M
T
T
tot
j
s
, T
stg
68 32
0.6 0.5 Nm
-55...+150 -55...+150
260 260 °C
9
5.0
12
6
Unit
A
V
µs
W
°C
1
J-STD-020 and JESD-022
2
Allowed number of short circuits: <1000; time between short circuits: >1s.
3
Maximum mounting processes: 3
1 Rev. 2.3 Sep 07
SKP06N60
SKA06N60
Thermal Resistance
Parameter Symbol Conditions
Max. Value
Unit
SKP06N60
SKA06N60
Characteristic
IGBT thermal resistance,
R
thJC
1.85 3.9
junction – case
Diode thermal resistance,
R
thJCD
3.5 5.0
junction – case
Thermal resistance,
junction – ambient
thJA
PG-TO-220-3-1
PG-TO220-3-31 /-111
62
65
R
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions
Value
min. Typ. max.
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V
(BR)CES
V
CE(sat)
V
VGE=0V, IF=6A
F
V
GE(th)
I
CES
I
GES
VCE=20V, IC=6A
g
fs
VGE=0V, IC=500µA
VGE = 15V, IC=6A
T
=25°C
j
T
=150°C
j
T
=25°C
j
=150°C
T
j
=250µA,VCE=V
I
C
VCE=600V,VGE=0V
T
=25°C
j
T
=150°C
j
VCE=0V,VGE=20V
600 - -
GE
1.7
-
1.2
-
3 4 5
-
-
2.0
2.3
1.4
1.25
-
-
- - 100 nA
- 4.2 - S
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current2)
C
iss
C
oss
C
rss
VCC=480V, IC=6A
Q
Gate
L
E
I
C(SC)
=25V,
V
CE
V
=0V,
GE
f=1MHz
- 350 420
- 38 46
- 23 28
- 32 42 nC
V
=15V
GE
-
=15V,tSC≤10µs
V
GE
≤ 600V,
V
CC
≤ 150°C
T
j
- 60 - A
7
2.4
2.8
1.8
1.65
20
700
-
K/W
Unit
V
µA
pF
nH
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2 Rev. 2.3 Sep 07
SKP06N60
SKA06N60
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter Symbol Conditions
min. typ. max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
j
=400V,IC=6A,
V
CC
V
=0/15V,
GE
=50Ω,
R
G
1)
L
=180nH,
σ
1)
C
=250pF
σ
Energy losses include
“tail” and diode
reverse recovery.
- 25 30
- 18 22
- 220 264
- 54 65
- 0.110 0.127
- 0.105 0.137
- 0.215 0.263
=25°C,
T
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
b
t
t
tF
Q
I
di
rr
S
rr
rrm
rr
/dt
=25°C,
T
j
V
=200V, IF=6A,
R
di
/dt=200A/µs
F
-
-
-
- 200 - nC
- 2.8 - A
- 180 -
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter Symbol Conditions
IGBT Characteristic
=150°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=400V,IC=6A,
V
CC
V
=0/15V,
GE
=50Ω,
R
G
1)
L
=180nH,
σ
1)
C
=250pF
σ
Energy losses include
“tail” and diode
reverse recovery.
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
b
t
t
tF
Q
I
di
rr
S
rr
rrm
rr
/dt
=150°C
T
j
V
=200V, IF=6A,
R
di
/dt=200A/µs
F
min. typ. max.
- 24 29
- 17 20
- 248 298
- 70 84
- 0.167 0.192
- 0.153 0.199
- 0.320 0.391
-
-
-
- 500 - nC
- 5.0 - A
- 200 -
Value
200
17
183
Value
290
27
263
Unit
ns
mJ
-
ns
-
-
A/µs
Unit
ns
mJ
-
ns
-
-
A/µs
1)
Leakage inductance L
an d Stray capacity Cσ due to dynamic test circuit in Figure E.
σ
3 Rev. 2.3 Sep 07
I
SKP06N60
SKA06N60
SKP06N60
30A
20A
10A
, COLLECTOR CURRENT
C
I
0A
10Hz 100Hz 1kHz 10kHz 100kHz
SKA06N60
TC=80°C
TC=110°C
c
f, SWITCHING FREQUENCY
I
c
10A
1A
, COLLECTOR CURRENT
C
I
0.1A
Figure 1. Collector current as a function of
switching frequency
(T
≤ 150°C, D = 0.5, VCE = 400V,
j
V
= 0/+15V, RG = 50Ω)
GE
tp=2µs
15µs
50µs
200µs
SKP06N60
1ms
SKA06N60
DC
1V 10V 100V 1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, T
= 25°C, Tj ≤ 150°C)
C
80W
SKP06N60
60W
40W
SKA06N60
, POWER DISSIPATION
tot
20W
P
0W
25°C 50°C 75°C 100°C 125°C
, CASE TEMPERATURE
T
C
Figure 3. Power dissipation as a function
of case temperature
≤ 150°C)
(T
j
SKP06N60
10A
SKA06N60
5A
, COLLECTOR CURRENT
C
I
0A
25°C 50°C 75°C 100°C 125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
≤ 15V, Tj ≤ 150°C)
(V
GE
4 Rev. 2.3 Sep 07
SKP06N60
SKA06N60
20A
20A
15A
VGE=20V
10A
, COLLECTOR CURRENT
5A
C
I
0A
0V 1V 2V 3V 4V 5V
15V
13V
11V
9V
7V
5V
V
, COLLECTOR-EMITTER VOLTAGE
CE
Figure 5. Typical output characteristics
= 25°C)
(T
j
15A
10A
, COLLECTOR CURRENT
5A
C
I
0A
Figure 6. Typical output characteristics
(Tj = 150°C)
20A
18A
16A
14A
12A
10A
Tj=+25°C
-55°C
+150°C
4.0V
3.5V
3.0V
2.5V
VGE=20V
15V
13V
11V
9V
7V
5V
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
IC = 12A
IC = 6A
8A
6A
, COLLECTOR CURRENT
C
I
4A
2A
0A
0V 2V 4V 6V 8V 10V
, GATE-EMITTER VOLTAGE
V
GE
Figure 7. Typical transfer characteristics
(V
= 10V)
CE
2.0V
1.5V
, COLLECTOR-EMITTER SATURATION VOLTAGE
CE(sat)
1.0V
V
-50°C 0°C 50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
= 15V)
GE
5 Rev. 2.3 Sep 07
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