INFINEON SKP10N60A, SKB10N60A, SKW10N60A User Manual
SKP10N60A, SKB10N60A
SKW10N60A
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 75% lower E
combined with low conduction losses
compared to previous generation
off
C
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
G
E
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
P-TO-220-3-1
(TO-220AB)
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
P-TO-247-3-1
(TO-247AC)
• Very soft, fast recovery anti-parallel EmCon diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
V
CE
SKP10N60A 600V 10A 2.3V
I
C
V
CE(sat)
T
j
150°C
Package Ordering Code
TO-220AB Q67040-S4458
SKB10N60A TO-263AB Q67040-S4459
SKW10N60A TO-247AC Q67040-S4506
Maximum Ratings
Parameter Symbol
Collector-emitter voltage
DC collector current
= 25°C
T
C
T
= 100°C
C
Pulsed collector current, tp limited by T
jmax
Turn off safe operating area
≤ 600V, Tj ≤ 150°C
V
CE
Diode forward current
= 25°C
T
C
= 100°C
T
C
Diode pulsed current, tp limited by T
jmax
Gate-emitter voltage
Short circuit withstand tim e
VGE = 15V, V
≤ 600V, Tj ≤ 150°C
CC
1)
Power dissipation
= 25°C
T
C
Operating junction and storage temperature
V
CE
I
C
I
Cpuls
-
I
F
I
Fpuls
V
GE
t
SC
P
tot
T
j
, T
stg
Value
SKP10N60A
SKB10N60A
SKW10N60A
600 V
20
10.6
40
40
21
10
42
±20
10
92
-55...+150
Unit
A
V
µs
W
°C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
1Jul-02
SKP10N60A, SKB10N60A
Thermal Resistance
Parameter Symbol Conditions
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB
1)
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
2)
R
thJC
R
thJCD
R
thJA
R
thJA
V
(BR)CES
V
CE(sat)VGE
V
F
I
CES
I
GES
g
fs
C
iss
C
oss
C
rss
Q
Gate
L
E
I
C(SC)
TO-220AB
TO-247AC
TO-263AB 40
VGE=0V, IC=500µA
= 15V, IC=10A
T
=25°C
j
=150°C
T
j
VGE=0V, IF=10A
T
=25°C
j
=150°C
T
j
VCE=600V,VGE=0V
=25°C
T
j
T
=150°C
j
VCE=0V,VGE=20V
VCE=20V, IC=10A
VCE=25V,
=0V,
V
GE
f=1MHz
VCC=480V, IC=10A
V
=15V
GE
TO-220AB
TO-247AC
VGE=15V,tSC≤10µs
V
≤ 600V,
CC
T
≤ 150°C
j
SKW10N60A
Max. Value
SKP10N60A
SKB10N60A
SKW10n60A
1.35
2.4
62
40
Value
min. Typ. max.
600 - -
1.7
-
1.2
-
-
-
2
2.3
1.4
1.25
-
-
2.4
2.8
1.8
1.65
40
1500
- - 100 nA
-6.7-S
- 550 660
-6275
-4251
-5268nC
-
-
7
13
- 100 - A
Unit
K/W
Unit
V
µA
pF
-
nH
-
1)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2Jul-02
SKP10N60A, SKB10N60A
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter Symbol Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteri sti c
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
b
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
rr
t
S
t
F
Q
rr
I
rrm
dirr/dt
Tj=25°C,
V
=400V,IC=10A,
CC
V
=0/15V,
GE
R
=25Ω,
G
1)
L
=180nH,
σ
1)
C
=55pF
σ
Energy losses include
“tail” and diode
reverse recovery.
=25°C,
T
j
V
=200V, IF=10A,
R
di
/dt=200A/µs
F
SKW10N60A
Value
min. typ. max.
-2834
-1215
- 178 214
-2429
- 0.15 0.173
- 0.17 0.221
- 0.320 0.394
-
-
-
220
20
200
- 310 - nC
-4.5-A
- 180 -
Unit
ns
mJ
-
ns
-
-
A/µs
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter Symbol Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Tj=150°C
V
=400V,IC=10A,
CC
V
=0/15V,
GE
R
=25Ω
G
1)
L
=180nH,
σ
1)
C
=55pF
σ
Energy losses include
“tail” and diode
reverse recovery.
Anti-Parallel Diode Characteri sti c
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
b
t
rr
t
S
t
F
Q
rr
I
rrm
dirr/dt
=150°C
T
j
V
=200V, IF=10A,
R
di
/dt=200A/µs
F
Value
min. typ. max.
-2834
Unit
ns
-1215
- 198 238
-2632
- 0.260 0.299
mJ
- 0.280 0.364
- 0.540 0.663
-
-
-
350
36
314
-
ns
-
-
- 690 - nC
-6.3-A
- 200 -
A/µs
1)
Leakage inductance L
a n d Stray capacity Cσ due to dynamic test circuit in Figure E.
σ
3Jul-02
SKP10N60A, SKB10N60A
z
SKW10N60A
50A
I
c
TC=80°c
40A
30A
20A
, COLLECTOR CURRENT
I
C
10A
TC=110°c
I
c
0A
10Hz 100Hz 1kHz 10kHz 100kH
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(T
≤ 150°C, D = 0.5, VCE = 400V,
j
V
= 0/+15V, RG = 25Ω)
GE
, COLLECTOR CURRENT
I
C
10A
1A
0,1A
1V 10V 100V 1000V
Figure 2. Safe operating area
(D = 0, T
= 25°C, Tj ≤ 150°C)
C
tp=5µs
15µs
50µs
200µs
1ms
DC
120W
100W
80W
60W
40W
, POWER DISSIPATION
tot
P
20W
0W
25°C 50°C 75°C 100°C 125°C
TC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(T
≤ 150°C)
j
25A
20A
15A
10A
, COLLECTOR CURRENT
C
I
5A
0A
25°C 50°C 75°C 100°C 125°C
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
4Jul-02
SKP10N60A, SKB10N60A
SKW10N60A
35A
30A
25A
VGE=20V
20A
15A
10A
, COLLECTOR CURRENT
C
I
5A
0A
0V 1V 2V 3V 4V 5V
15V
13V
11V
9V
7V
5V
VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(T
= 25°C)
j
35A
30A
25A
VGE=20V
20A
15A
10A
, COLLECTOR CURRENT
C
I
5A
0A
0V 1V 2V 3V 4V 5V
15V
13V
11V
9V
7V
5V
Figure 6. Typical output characteristics
(Tj = 150°C)
35A
30A
25A
20A
15A
10A
, COLLECTOR CURRENT
C
I
5A
0A
0V 2V 4V 6V 8V 10V
Tj=+25°C
+150°C
VGE, GATE-EMITTER VOLTAGE Tj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics
(V
= 10V)
CE
3,5V
IC=20A
3,0V
2,5V
IC=10A
2,0V
IC=5A
, COLLECTOR-EMITTER SATURATION VOLT AGE
1,5V
CE(sat)
V
0°C 50°C 100°C 150°C
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
= 15V)
GE
5Jul-02
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