Infineon SIGC81T60NC Data Sheet
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SIGC81T60NC
IGBT Chip in NPT -technology
FEATURES:
• 600V NPT technology
• 100µm chip
• short circuit prove
• positive temperature coefficient
• easy paralleling
Chip Type VCE ICn Die Size Package Ordering Code
This chip is used for:
• IGBT-Modules
Applications:
• drives
G
SIGC81T60NC 600V 100A 8.99 x 8.99 mm2 sawn on foil
Q67041-A4694-
A001
MECHANICAL PARAMETER:
Raster size 8.99 x 8.99
Area total / active 80.82 / 72.6
Emitter pad size 8x( 1.77x2.82 )
Gate pad size 0.78 x 1.51
Thickness 100 µm
Wafer size 150 mm
Flat position 90 deg
Max.possible chips per wafer 169
Passivation frontside Photoimide
Emitter metallization 3200 nm Al Si 1%
mm2
Collector metallization
Die bond electrically conductive glue or solder
Wire bond Al, ≤500µm
Reject Ink Dot Size ∅ 0.65mm ; max 1.2mm
Recommended Storage Environment
suitable for epoxy and soft solder die bonding
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
1400 nm Ni Ag –system
Edited by INFINEON Technologies AI PS DD HV3, L 7462 -M, Edition 2, 28.11.2003
SIGC81T60NC
MAXIMUM RATINGS:
Parameter Symbol Value Unit
Collector-emitter voltage, Tj=25 °C
DC collector current, limited by T
IC
jmax
Pulsed collector current, tp limited by T
I
jmax
VCE 600 V
1 )
A
300 A
cpuls
Gate emitter voltage VGE ±20 V
Operating junction and storage temperature Tj, T
1 )
depending on thermal properties of assembly
-55 ... +150 °C
stg
STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified:
Value
Parameter Symbol Conditions
min. typ. max.
Collector-emitter breakdown voltage V
Collector-emitter saturation voltage V
Gate-emitter threshold voltage V
Zero gate voltage collector current I
Gate-emitter leakage current I
VGE=0V, IC=4mA 600
(BR)CES
VGE=15V, IC=100A 1.7 2.1 2.5
CE(sat)
IC=1.5mA, VGE=VCE 4.5 5.5 6.5
GE(th)
VCE=600V, VGE=0V 7 µA
CES
VCE=0V, VGE=20V 300 nA
GES
DYNAMIC CHARACTERISTICS (tested at component):
Parameter Symbol
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
- 4300 -
iss
- tbd -
oss
rss
Conditions
VCE=25V
VGE=0V
f =1MHz
min. typ. max.
Value
- 400 -
Unit
pF
SWITCHING CHARACTERISTICS (tested at component), Inductive Load:
Unit
V
Parameter Symbol
Turn-on delay time t
- 95 -
d(on)
Conditions 1)
Tj=125°C
min. typ. max.
Value
Unit
ns
VCC=300V
Rise time tr - 30 -
Turn-off delay time t
d(off)
IC=100A
VGE= ±15V
- 200 -
RG=2.2Ω
Fall time tf
1)
values also influenced by parasitic L- and C- in measurement and package.
- 35 -
Edited by INFINEON Technologies AI PS DD HV3, L 7462 -M, Edition 2, 28.11.2003
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