C
SIGC81T60NC
IGBT Chip in NPT -technology
FEATURES:
• 600V NPT technology
• 100µm chip
• short circuit prove
• positive temperature coefficient
• easy paralleling
Chip Type VCE ICn Die Size Package Ordering Code
This chip is used for:
• IGBT-Modules
Applications:
• drives
G
SIGC81T60NC 600V 100A 8.99 x 8.99 mm2 sawn on foil
Q67041-A4694-
A001
MECHANICAL PARAMETER:
Raster size 8.99 x 8.99
Area total / active 80.82 / 72.6
Emitter pad size 8x( 1.77x2.82 )
Gate pad size 0.78 x 1.51
Thickness 100 µm
Wafer size 150 mm
Flat position 90 deg
Max.possible chips per wafer 169
Passivation frontside Photoimide
Emitter metallization 3200 nm Al Si 1%
mm2
Collector metallization
Die bond electrically conductive glue or solder
Wire bond Al, ≤500µm
Reject Ink Dot Size ∅ 0.65mm ; max 1.2mm
Recommended Storage Environment
suitable for epoxy and soft solder die bonding
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
1400 nm Ni Ag –system
Edited by INFINEON Technologies AI PS DD HV3, L 7462 -M, Edition 2, 28.11.2003
SIGC81T60NC
MAXIMUM RATINGS:
Parameter Symbol Value Unit
Collector-emitter voltage, Tj=25 °C
DC collector current, limited by T
IC
jmax
Pulsed collector current, tp limited by T
I
jmax
VCE 600 V
1 )
A
300 A
cpuls
Gate emitter voltage VGE ±20 V
Operating junction and storage temperature Tj, T
1 )
depending on thermal properties of assembly
-55 ... +150 °C
stg
STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified:
Value
Parameter Symbol Conditions
min. typ. max.
Collector-emitter breakdown voltage V
Collector-emitter saturation voltage V
Gate-emitter threshold voltage V
Zero gate voltage collector current I
Gate-emitter leakage current I
VGE=0V, IC=4mA 600
(BR)CES
VGE=15V, IC=100A 1.7 2.1 2.5
CE(sat)
IC=1.5mA, VGE=VCE 4.5 5.5 6.5
GE(th)
VCE=600V, VGE=0V 7 µA
CES
VCE=0V, VGE=20V 300 nA
GES
DYNAMIC CHARACTERISTICS (tested at component):
Parameter Symbol
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
- 4300 -
iss
- tbd -
oss
rss
Conditions
VCE=25V
VGE=0V
f =1MHz
min. typ. max.
Value
- 400 -
Unit
pF
SWITCHING CHARACTERISTICS (tested at component), Inductive Load:
Unit
V
Parameter Symbol
Turn-on delay time t
- 95 -
d(on)
Conditions 1)
Tj=125°C
min. typ. max.
Value
Unit
ns
VCC=300V
Rise time tr - 30 -
Turn-off delay time t
d(off)
IC=100A
VGE= ±15V
- 200 -
RG=2.2Ω
Fall time tf
1)
values also influenced by parasitic L- and C- in measurement and package.
- 35 -
Edited by INFINEON Technologies AI PS DD HV3, L 7462 -M, Edition 2, 28.11.2003
CHIP DRAWING:
SIGC81T60NC
Edited by INFINEON Technologies AI PS DD HV3, L 7462 -M, Edition 2, 28.11.2003
FURTHER ELECTRICAL CHARACTERISTICS:
SIGC81T60NC
This chip data sheet refers to the
device data sheet
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2002
All Rights Reserved.
Attention please!
tbd
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
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Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life -support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Edited by INFINEON Technologies AI PS DD HV3, L 7462 -M, Edition 2, 28.11.2003
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