Infineon SGP15N60, SGW15N60 Schematic

SGP15N60

SGW15N60

Fast IGBT in NPT-technology

• 75% lower E

compared to previous generation

off

combined with low conduction losses

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

- Inverter

• NPT-Technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

• Qualified according to JEDEC

1

for target applications

PG-TO-220-3-1

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V

I

CE

V

C

Tj Marking Package

CE(sat)

G

PG-TO-247-3-21

C

E

SGP15N60 600V 15A 2.3V

SGW15N60 600V 15A 2.3V

150°C 150°C

G15N60 PG-TO-220-3-1

G15N60 PG-TO-247-3-21

Maximum Ratings

Parameter Symbol Value Unit

V

Collector-emitter voltage

DC collector current

= 25°C

T

C

T

= 100°C

C

Pulsed collector current, tp limited by T

I

jmax

Turn off safe operating area

≤ 600V, Tj ≤ 150°C

V

CE

Gate-emitter voltage

Avalanche energy, single pulse

I

= 15 A, VCC = 50 V, R

C

start at T

= 25°C

j

= 25 Ω,

GE

Short circuit withstand time2

= 15V, V

V

GE

≤ 600V, Tj ≤ 150°C

CC

Power dissipation

T

= 25°C

C

Operating junction and storage temperature

Soldering temperature,

CE

I

C

Cpuls

-

V

GE

E

AS

t

SC

P

tot

T

j

T

s

, T

600 V

31

A

15

62

±20

85 mJ

10

stg

139 W

-55...+150

V

µs

°C

260

wavesoldering, 1.6mm (0.063 in.) from case for 10s

1

J-STD-020 and JESD-022

2

Allowed number of short circuits: <1000; time between short circuits: >1s.

1 Rev. 2.1 June 06

SGP15N60

SGW15N60

Thermal Resistance

Parameter Symbol Conditions Max. Value Unit

Characteristic

R

IGBT thermal resistance,

thJC

junction – case

Thermal resistance,

junction – ambient

thJA

PG-TO-220-3-1

PG-TO-247-3-21

R

Electrical Characteristic, at T

= 25 °C, unless otherwise specified

j

Parameter Symbol Conditions

Static Characteristic

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Gate-emitter threshold voltage

Zero gate voltage collector current

Gate-emitter leakage current

Transconductance

V

(BR)CES

V

CE(sat)

V

GE(th)

I

CES

I

GES

VCE=20V, IC=15A

g

fs

VGE=0V, IC=500µA

VGE = 15V, IC=15A

T

=25°C

j

T

=150°C

j

=400µA,VCE=V

I

C

VCE=600V,VGE=0V

T

=25°C

j

T

=150°C

j

VCE=0V,VGE=20V

Dynamic Characteristic

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate charge

Internal emitter inductance

measured 5mm (0.197 in.) from case

Short circuit collector current2)

C

iss

C

oss

C

rss

VCC=480V, IC=15A

Q

Gate

L

E

I

C(SC)

=25V,

V

CE

V

=0V,

GE

f=1MHz

V

=15V

GE

PG-TO-220-3-1

PG-TO-247-3-21

=15V,tSC≤10µs

V

GE

V

CC

≤ 150°C

T

j

0.9

62

40

Value

min. Typ. max.

600 - -

GE

1.7

-

3 4 5

-

2

2.3

-

2.4

2.8

40

2000

- - 100 nA

3 10.9 - S

- 800 960

- 84 101

- 52 62

- 76 99 nC

-

7

13

-

- 150 - A

≤ 600V,

K/W

Unit

V

µA

pF

nH

2)

Allowed number of short circuits: <1000; time between short circuits: >1s.

2 Rev. 2.1 June 06

SGP15N60

SGW15N60

Switching Characteristic, Inductive Load, at Tj=25 °C

Parameter Symbol Conditions

min. typ. max.

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

j

=400V,IC=15A,

V

CC

V

=0/15V,

GE

R

=21Ω,

G

1)

L

=180nH,

σ

1)

=250pF

C

σ

Energy losses include “tail” and diode reverse recovery.

- 32 38

- 23 28

- 234 281

- 46 55

- 0.30 0.36

- 0.27 0.35

- 0.57 0.71

=25°C,

T

Switching Characteristic, Inductive Load, at Tj=150 °C

Parameter Symbol Conditions

IGBT Characteristic

=150°C

T

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

j

=400V,IC=15A,

V

CC

1)

=180nH,

L

σ

1)

C

=250pF

σ

=0/15V,

V

GE

=21Ω

R

G

Energy losses include “tail” and diode reverse recovery.

min. typ. max.

- 31 38

- 23 28

- 261 313

- 54 65

- 0.45 0.54

- 0.41 0.53

- 0.86 1.07

Value

Unit

ns

mJ

Unit

ns

mJ

1)

Leakage inductance L

an d Stray capacity Cσ due to dynamic test circuit in Figure E.

σ

3 Rev. 2.1 June 06

A

SGP15N60

SGW15N60

80A

70A

I

c

100

tp=5µs

60A

50A

40A

30A

, COLLECTOR CURRENT

20A

C

I

10A

0A

10Hz 100Hz 1kHz 10kHz 100kHz

TC=80°C

TC=110°C

I

c

f, SWITCHING FREQUENCY

10A

, COLLECTOR CURRENT

C

I

0.1A

Figure 1. Collector current as a function of switching frequency

≤ 150°C, D = 0.5, VCE = 400V,

(T

j

V

= 0/+15V, RG = 21Ω)

GE

35A

140W

30A

120W

1A

1V 10V 100V 1000V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 2. Safe operating area

(D = 0, T

= 25°C, Tj ≤ 150°C)

C

15µs

50µs

200µs

1ms

DC

100W

80W

60W

, POWER DISSIPATION

40W

tot

P

20W

0W

25°C 50°C 75°C 100°C 125°C

, CASE TEMPERATURE

T

C

Figure 3. Power dissipation as a function of case temperature

≤ 150°C)

(T

j

25A

20A

15A

10A

, COLLECTOR CURRENT

C

I

5A

0A

25°C 50°C 75°C 100°C 125°C

TC, CASE TEMPERATURE

Figure 4. Collector current as a function of case temperature

(VGE ≤ 15V, Tj ≤ 150°C)

4 Rev. 2.1 June 06

Infineon SGP15N60, SGW15N60 Schematic [ru]