Infineon SGP02N120, SGD02N120, SGI02N120 Data Sheet
SGP02N120
SGD02N120, SGI02N120
Fast IGBT in NPT-technology
• 40% lower E
compared to previous generation
off
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Qualified according to JEDEC
1
for target applications
PG-TO-252-3-11
(D-PAK)
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
V
I
CE
E
C
Tj Marking Package
off
C
G
E
PG-TO-220-3-1
PG-TO-262-3-1
(I²-PAK)
SGP02N120 1200V 2A 0.11mJ
SGD02N120 1200V 2A 0.11mJ
SGI02N120 1200V 2A 0.11mJ
150°C
150°C
150°C
GP02N120 PG-TO-220-3-1
02N120 PG-TO-252-3-11
GI02N120 PG-TO-262-3-1
Maximum Ratings
Parameter Symbol Value Unit
V
Collector-emitter voltage
DC collector current
= 25°C
T
C
= 100°C
T
C
Pulsed collector current, tp limited by T
I
jmax
Turn off safe operating area
≤ 1200V, Tj ≤ 150°C
V
CE
Gate-emitter voltage
Avalanche energy, single pulse
= 2A, V
I
C
= 50V, R
CC
= 25Ω, start at Tj = 25°C
GE
Short circuit withstand time2
= 15V, 100V ≤ V
V
GE
≤ 1200V, Tj ≤ 150°C
CC
Power dissipation
= 25°C
T
C
Operating junction and storage temperature
Soldering temperature,
PG-TO252 (reflow soldering, MSL3)
Other packages: 1.6mm (0.063 in.) from case for 10s
CE
I
C
1200 V
6.2
A
2.8
Cpuls
-
V
GE
E
AS
tSC
P
tot
T
j
, T
stg
9.6
9.6
±20
V
10 mJ
10
µs
62 W
-55...+150
°C
-
260
260
1
J-STD-020 and JESD-022
2
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1 Rev. 2.3 Sep. 07
SGP02N120
SGD02N120, SGI02N120
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
R
IGBT thermal resistance,
thJC
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB1)
R
thJA
thJA
PG-TO-220-3-1
PG-TO-262-3-1
PG-TO-252-3-11 50
R
Electrical Characteristic, at T
= 25 °C, unless otherwise specified
j
Parameter Symbol Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V
(BR)CES
V
CE(sat)
V
GE(th)
I
CES
I
GES
g
VCE=20V, IC=2A
fs
VGE=0V, IC=100µA
VGE = 15V, IC=2A
T
=25°C
j
=150°C
T
j
=100µA,VCE=VGE
I
C
VCE=1200V,VGE=0V
T
=25°C
j
T
=150°C
j
VCE=0V,VGE=20V
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
C
C
C
Q
L
iss
oss
rss
Gate
E
V
CE
V
GE
f=1MHz
VCC=960V, IC=2A
V
GE
-
measured 5mm (0.197 in.) from case
Short circuit collector current2)
I
C(SC)
V
GE
100V≤V
≤ 150°C
T
j
2.0
62
Value
min. typ. max.
1200 - -
2.5
-
3.1
3.7
3.6
4.3
3 4 5
-
-
-
-
25
100
- - 100 nA
1.5 - S
=25V,
=0V,
- 205 250
- 20 25
- 12 14
- 11 - nC
=15V
=15V,tSC≤10µs
≤1200V,
CC
7
- 24 - A
-
K/W
Unit
V
µA
pF
nH
1)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2 Rev. 2.3 Sep. 07
SGP02N120
SGD02N120, SGI02N120
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter Symbol Conditions
min. typ. max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
=25°C,
j
=800V,IC=2A,
V
CC
V
=15V/0V,
GE
=91Ω,
R
G
1)
=180nH,
L
σ
1)
C
=40pF
σ
Energy losses include
“tail” and diode
- 23 30
- 16 21
- 260 340
- 61 80
- 0.16 0.21
- 0.06 0.08
- 0.22 0.29
reverse recovery.
Switching Characteristic, Inductive Load, at T
=150 °C
j
Parameter Symbol Conditions
min. typ. max.
IGBT Characteristic
t
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
=150°C
j
V
=800V,
CC
I
=2A,
C
=15V/0V,
V
GE
=91Ω,
R
G
1)
L
=180nH,
σ
1)
C
=40pF
σ
Energy losses include
- 26 31
- 14 17
- 290 350
- 85 102
- 0.27 0.33
- 0.11 0.15
- 0.38 0.48
“tail” and diode
reverse recovery.
1)
Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.
Value
Value
Unit
ns
mJ
Unit
ns
mJ
Power Semiconductors
3 Rev. 2.3 Sep. 07
SGP02N120
SGD02N120, SGI02N120
I
12A
10A
c
10A
tp=10µs
8A
6A
4A
, COLLECTOR CURRENT
C
I
I
2A
0A
10Hz 100Hz 1kHz 10kHz 100kHz
c
f, SWITCHING FREQUENCY
TC=80°C
TC=110°C
1A
0.1A
, COLLECTOR CURRENT
C
I
.01A
Figure 1. Collector current as a function of
switching frequency
≤ 150°C, D = 0.5, VCE = 800V,
(T
j
V
= +15V/0V, RG = 91Ω)
GE
60W
50W
1V 10V 100V 1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, T
7A
6A
5A
= 25°C, Tj ≤ 150°C)
C
50µs
150µs
500µs
20ms
DC
40W
30W
20W
, POWER DISSIPATION
tot
P
10W
0W
25°C 50°C 75°C 100°C 125°C
, CASE TEMPERATURE
T
C
Figure 3. Power dissipation as a function
of case temperature
(T
≤ 150°C)
j
Power Semiconductors
4A
3A
2A
, COLLECTOR CURRENT
C
I
1A
0A
25°C 50°C 75°C 100°C 125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
4 Rev. 2.3 Sep. 07
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