查询SEMH2供应商
NPN Silicon Digital Transistor Array
Preliminary data
• Switching circuit, inverter, interface circuit,
SEMH2
driver circuit
• Two ( galvanic) internal isolated Transistors
with good matching in one package
• Built in bias resistor (R
=47kΩ, R2=47kΩ)
1
C1 B2 E2
6 54
TR1
R
2
R
1
R
2
TR2
R
1
321
C2B1E1
EHA07174
4
5
6
1
Type Marking Pin Configuration Package
SEMH2 WE 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1
SOT666
Maximum Ratings
Parameter Symbol Value Unit
3
2
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Input on Voltage V
DC collector current I
Total power dissipation, T
= 75 °C
S
Junction temperature T
Storage temperature T
Thermal Resistance
Junction - soldering point
1
For calculation of R
thJA
1)
R
please refer to Application Note Thermal Resistance
C
P
CEO
CBO
EBO
i(on)
tot
j
stg
thJS
50 V
50
10
50
70 mA
250 mW
150 °C
-65 ... 150
≤ 300 K/W
Mar-01-20041
Electrical Characteristics at TA=25°C, unless otherwise specified
SEMH2
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
= 100 µA, IB = 0
C
Collector-base breakdown voltage
I
= 10 µA, IE = 0
C
Emitter-base breakdown voltage
I
= 10 µA, IC = 0
E
Collector cutoff current
V
= 40 V, IE = 0
CB
Emitter cutoff current
V
= 10 V, IC = 0
EB
DC current gain 1)
I
= 5 mA, VCE = 5 V
C
Collector-emitter saturation voltage1)
Symbol Values Unit
min. typ. max.
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CEsat
50 - - V
50 - -
- - -
- - 100 nA
- - 164 µA
70 - -
-
- - 0.3 V
I
= 10 mA, IB = 0.5 mA
C
Input off voltage
I
= 100 µA, VCE = 5 V
C
Input on Voltage
I
= 2 mA, VCE = 0.3 V
C
Input resistor R
V
V
i(off)
i(on)
1
Resistor ratio R1/R
AC Characteristics
Transition frequency
= 10 mA, VCE = 5 V, f = 100 MHz
I
C
Collector-base capacitance
= 10 V, f = 1 MHz
V
CB
f
C
T
cb
0.8 - 1.5
1 - 3
32 47 62
2
0.9 1 1.1
kΩ
-
- 100 - MHz
- 3 - pF
1) Pulse test: t < 300µs; D < 2%
Mar-01-20042
SEMH2
DC Current Gain h
= 5V (common emitter configuration)
V
CE
= f (IC)
FE
3
10
-
2
10
FE
h
1
10
0
10
10
-1
10
0
10
1
10
Collector-Emitter Saturation Voltage
V
= f (IC), hFE = 20
CEsat
2
10
mA
C
I
1
10
0
2
I
mA
C
10
3
10
0 0.2 0.4 0.6
V
V
CEsat
1
Input on Voltage V
= 0.3V (common emitter configuration)
V
CE
i(on)
= f (IC)
2
10
mA
1
10
C
I
0
10
-1
10
10
-1
10
0
10
1
Input off voltage V
= 5V (common emitter configuration)
V
CE
i(off)
= f (IC)
1
10
mA
0
10
C
I
-1
10
-2
10
-3
10
0 1 2 3
V
V
5
i(off)
i(on)
10
2
V
V
Mar-01-20043
SEMH2
Total power dissipation P
300
mW
200
tot
P
150
100
50
= f (TS)
tot
0
0 15 30 45 60 75 90 105 120
Permissible Pulse Load R
3
10
K/W
2
10
thJS
R
1
10
0
10
thJS
°C
T
= f (tp)
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
150
S
Permissible Pulse Load
P
totmax
/ P
totDC
= f (tp)
3
10
totDC
/ P
2
10
totmax
P
10
1
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
-1
10
0
10
-7
-6
-5
-4
-3
-7
-6
-5
-4
-3
10
10
10
10
10
-2
t
0
s
10
10
10
10
10
10
p
10
-2
s
t
0
10
p
Mar-01-20044
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