INFINEON SDT12S60 User Manual

Silicon Carbide Schottky Diode

j

g



Worlds first 600V Schottky diode



Revolutionary semiconductor

material - Silicon Carbide



Switching behavior benchmark



No reverse recovery



No temperature influence on

the switching behavior



No forward recovery

Preliminary data

SDT12S60SDT12S60

Product Summary

V

Q

I

F

RRM

c

600

30 nC

12 A

P-TO220-2-2.

V

Type Package Ordering Code

SDT12S60 P-TO220-2-2. Q67040-S4470

Marking

D12S60

Pin 1 Pin 2 Pin 3

C A

Maximum Ratings,at Tj = 25 °C, unless otherwise specified

Parameter Symbol Value Unit

Continuous forward current, T

=100°C

C

RMS forward current, f=50Hz

Surge non repetitive forward current, sine halfwave

TC=25°C, tp=10ms

Repetitive peak forward current

Tj=150°C, TC=100°C, D=0.1

Non repetitive peak forward current

tp=10µs, TC=25°C

i 2t value, T

=25°C, tp=10ms

C

I

I

I

I

I



Repetitive peak reverse voltage V

Surge peak reverse voltage V

F

FRMS

FSM

FRM

FMAX

i2dt

RRM

RSM

12 A

17

36

49

120

6.48

600 V

600

A²s

Power dissipation, T

=25°C

C

Operating and storage temperature T

Page 1

P

tot

T

,

st

88.2 W

-55... +175

°C

2002-01-14

Preliminary data

SDT12S60SDT12S60

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - case

Thermal resistance, junction - ambient, leaded

R

R

thJC

thJA

- - 1.7 K/W

- - 62

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Diode forward voltage

IF=12A, Tj=25°C

I

=12A, Tj=150°C

F

Reverse current

VR=600V, Tj=25°C

V

=600V, Tj=150°C

R

V

I

F

-

-

R

-

-

1.5

1.7

40

100

1.7

2.1

400

2000

V

µA

Electrical Characteristics,at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics

Total capacitive charge

VR=400V, IF=12A, diF/dt=200A/µs, Tj=150°C

Switching time

VR=400V, IF=12A, diF/dt=200A/µs, Tj=150°C

Total capacitance

VR=1V, TC=25°C, f=1MHz

V

=300V, TC=25°C, f=1MHz

R

V

=600V, TC=25°C, f=1MHz

R

Page 2

Q

c

t

rr

C

- 30 - nC

- n.a. - ns

-

-

-

450

45

43

pF

-

-

-

2002-01-14

Preliminary data

SDT12S60SDT12S60

1 Power dissipation

P

= f (TC)

tot

90

W

70

60

tot

P

50

40

30

20

10

0

0 20 40 60 80 100 120 140

°C

T

2 Diode forward current

IF= f (TC)

parameter: Tj

24

A

20

18

16

F

I

14

12

10

8

6

4

2

180

C

0

0 20 40 60 80 100 120 140

175 °C

°C

T

180

C

3 Typ. forward characteristic

IF = f (VF)

parameter: Tj , tp = 350 µs

24

A

150°C
125°C
100°C
25°C

16

F

I

-40°C

12

8

4

0

0 0.5 1 1.5

4 Typ. forward power dissipation vs.

average forward current

P

F(AV)

W

F(AV)

P

V

2.5

V

F

) T

=f(I

F

44

d=0.1
d=0.2

36

d=0.5
d=1

32

28

24

20

16

12

8

4

0

0 2 4 6 8 10 12

=100°C, d = tp/T

C

A

I

F(AV)

16

Page 3

2002-01-14