INFINEON SDT05S60 User Manual

SDT05S60SDT05S60
Silicon Carbide Schottky Diode
Worlds first 600V Schottky diode
Revolutionary semiconductor
Switching behavior benchmark
No reverse recovery
No temperature influence on
the switching behavior
No forward recovery
Type Package Ordering Code
SDT05S60 P-TO220-2-2. Q67040S4644
thinQ! SiC Schottky Diode
Product Summary
Marking
D05S60
V
RRM
Q
c
I
F
Pin 1 Pin 2
C A
600
14 nC
5 A
P-TO220-2-2.
V
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Continuous forward current, T
=100°C
C
RMS forward current, f=50Hz
Surge non repetitive forward current, sine halfwave
TC=25°C, tp=10ms
Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
tp=10µs, TC=25°C
i 2t value, T
=25°C, t
C
=10ms i
p
Repetitive peak reverse voltage V
Surge peak reverse voltage V
Power dissipation, T
=25°C
C
Operating and storage temperature T
Symbol Value Unit
I
F
I
FRMS
I
FSM
I
FRM
I
FMAX
2
dt
RRM
RSM
P
tot
T
,
j
stg
5 A
7.1
18.5
21
50
1.7
600 V
600
43 W
-55... +175
A²s
°C
Rev. 2.0
Page 1
2004-03-18
Thermal Characteristics
SDT05S60SDT05S60
Parameter
Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
R
R
thJC
thJA
- - 3.5 K/W
- - 62
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
Static Characteristics
Diode forward voltage
IF=5A, Tj=25°C
=5A, Tj=150°C
I
F
Reverse current
VR=600V, Tj=25°C
V
I
F
-
-
R
-
1.5
1.7
19
1.7
2.1
200
V
µA
V
=600V, Tj=150°C
R
-
45
1000
Rev. 2.0
Page 2
2004-03-18
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
SDT05S60SDT05S60
Parameter
AC Characteristics
Total capacitive charge
VR=400V, IF=5A, diF/dt=200A/µs, Tj=150°C
Switching time
VR=400V, IF=5A, diF/dt=200A/µs, Tj=150°C
Total capacitance
VR=1V, TC=25°C, f=1MHz
=300V, TC=25°C, f=1MHz
V
R
=600V, TC=25°C, f=1MHz
V
R
Symbol Values Unit
min. typ. max.
Q
c
t
rr
C
- 14 - nC
- n.a - ns
-
-
-
170
16
12
pF
-
-
-
Rev. 2.0
Page 3
2004-03-18
SDT05S60SDT05S60
j
1 Power dissipation
P
= f (TC)
tot
SDT05S60
50
W
40
35
tot
P
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140 160°C190
2 Diode forward current
I
= f (TC)
F
parameter:
A
4.5
F
I
3.5
2.5
1.5
0.5
T
C
Tj≤175 °C
6
5
4
3
2
1
0
0 20 40 60 80 100 120 140
°C
T
180
C
3 Typ. forward characteristic
I
= f (VF)
F
T
parameter:
10
A
8
7
F
I
6
5
4
3
2
1
0
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2
, tp = 350 µs
150°C 125°C 100°C 25°C
-40°C
4 Typ. forward power dissipation vs.
average forward current
P
2.5
V
V
F
=
f(I
) T
F(AV)
F
24
=100°C, d = tp/T
C
W
d=1 d=0.5
20
d=0.2 d=0.1
18
16
F(AV)
P
14
12
10
8
6
4
2
0
0 1 2 3 4 5 6 7 8
A
I
F(AV)
10
Rev. 2.0
Page 4
2004-03-18
SDT05S60SDT05S60
5 Typ. reverse current vs. reverse voltage
I
=f(VR)
R
2
10
µA
1
10
R
10
I
10
10
10
150°C 125°C 100°C 25°C
0
-1
-2
-3
100 150 200 250 300 350 400 450 500
600
V
V
R
6 Transient thermal impedance
Z
= f (tp)
thJC
parameter :
1
SDT05S60
10
K/W
0
10
thJC
-1
Z
10
-2
10
-3
10
-4
10
-7
10
D = t
single pulse
10
/T
p
-6
-5
-4
-3
10
10
10
10
-2
D = 0.50
0.20
0.10
0.05
0.02
0.01
s
t
p
10
0
7 Typ. capacitance vs. reverse voltage
C= f(V
parameter:
C
200
pF
150
125
100
75
50
25
0
10
)
R
T
= 25 °C, f = 1 MHz
C
0
10
1
10
2
V
V
R
10
8 Typ. C stored energy
E
=f(VR)
C
3
µJ
2
C
E
1.5
1
0.5
3
0
0 100 200 300 400
600
V
V
R
Rev. 2.0
Page 5
2004-03-18
9 Typ. capacitive charge vs. current slop
e
SDT05S60SDT05S60
Qc=f(di
F
/dt)
parameter:
20
nC
16
14
c
Q
12
10
8
6
4
2
0
0 100 200 300 400 500 600 700 800
T
= 150 °C
j
IF*0.5
IF*2
I
A/µs
diF/dt
F
1000
Rev. 2.0
Page 6
2004-03-18
TO-220-2-2
A
N
SDT05S60SDT05S60
P
symbol
E
D
U
V
B
H
F
W
J
X
L
G
T
C
M
K
A 9.70 10.10 0.3819 0.3976
B 15.30 15.90 0.6024 0.6260
C 0.65 0.85 0.0256 0.0335
D 3.55 3.85 0.1398 0.1516
E 2.60 3.00 0.1024 0.1181
F 9.00 9.40 0.3543 0.3701
G 13.00 14.00 0.5118 0.5512
H 17.20 17.80 0.6772 0.7008
J 4.40 4.80 0.1732 0.1890
K 0.40 0.60 0.0157 0.0236
L
M
N
P 1.10 1.40 0.0433 0.0551
T
U
V
W
X 0.00 0.40 0.0000 0.0157
dimensions
[mm] [inch]
min ma x mi n ma x
0.41 typ.1.05 ty p.
2.54 ty p. 0.1 ty p.
4.4 typ. 0.173 typ.
2.4 typ. 0.095 typ.
0.26 typ.6.6 typ.
0.51 typ.13.0 typ.
7.5 typ. 0.295 typ.
Rev. 2.0
Page 7
2004-03-18
SDT05S60SDT05S60
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.0
Page 8
2004-03-18
This datasheet has been download from:
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