SDT05S60SDT05S60
Silicon Carbide Schottky Diode
• Worlds first 600V Schottky diode
• Revolutionary semiconductor
material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
the switching behavior
• No forward recovery
Type Package Ordering Code
SDT05S60 P-TO220-2-2. Q67040S4644
thinQ! SiC Schottky Diode
Product Summary
Marking
D05S60
V
RRM
Q
c
I
F
Pin 1 Pin 2
C A
600
14 nC
5 A
P-TO220-2-2.
V
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Continuous forward current, T
=100°C
C
RMS forward current, f=50Hz
Surge non repetitive forward current, sine halfwave
TC=25°C, tp=10ms
Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
tp=10µs, TC=25°C
i 2t value, T
=25°C, t
C
=10ms ∫i
p
Repetitive peak reverse voltage V
Surge peak reverse voltage V
Power dissipation, T
=25°C
C
Operating and storage temperature T
Symbol Value Unit
I
F
I
FRMS
I
FSM
I
FRM
I
FMAX
2
dt
RRM
RSM
P
tot
T
,
j
stg
5 A
7.1
18.5
21
50
1.7
600 V
600
43 W
-55... +175
A²s
°C
Rev. 2.0
Page 1
2004-03-18
Thermal Characteristics
SDT05S60SDT05S60
Parameter
Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
R
R
thJC
thJA
- - 3.5 K/W
- - 62
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
Static Characteristics
Diode forward voltage
IF=5A, Tj=25°C
=5A, Tj=150°C
I
F
Reverse current
VR=600V, Tj=25°C
V
I
F
-
-
R
-
1.5
1.7
19
1.7
2.1
200
V
µA
V
=600V, Tj=150°C
R
-
45
1000
Rev. 2.0
Page 2
2004-03-18
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
SDT05S60SDT05S60
Parameter
AC Characteristics
Total capacitive charge
VR=400V, IF=5A, diF/dt=200A/µs, Tj=150°C
Switching time
VR=400V, IF=5A, diF/dt=200A/µs, Tj=150°C
Total capacitance
VR=1V, TC=25°C, f=1MHz
=300V, TC=25°C, f=1MHz
V
R
=600V, TC=25°C, f=1MHz
V
R
Symbol Values Unit
min. typ. max.
Q
c
t
rr
C
- 14 - nC
- n.a - ns
-
-
-
170
16
12
pF
-
-
-
Rev. 2.0
Page 3
2004-03-18
SDT05S60SDT05S60
j
1 Power dissipation
P
= f (TC)
tot
SDT05S60
50
W
40
35
tot
P
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140 160°C190
2 Diode forward current
I
= f (TC)
F
parameter:
A
4.5
F
I
3.5
2.5
1.5
0.5
T
C
Tj≤175 °C
6
5
4
3
2
1
0
0 20 40 60 80 100 120 140
°C
T
180
C
3 Typ. forward characteristic
I
= f (VF)
F
T
parameter:
10
A
8
7
F
I
6
5
4
3
2
1
0
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2
, tp = 350 µs
150°C
125°C
100°C
25°C
-40°C
4 Typ. forward power dissipation vs.
average forward current
P
2.5
V
V
F
=
f(I
) T
F(AV)
F
24
=100°C, d = tp/T
C
W
d=1
d=0.5
20
d=0.2
d=0.1
18
16
F(AV)
P
14
12
10
8
6
4
2
0
0 1 2 3 4 5 6 7 8
A
I
F(AV)
10
Rev. 2.0
Page 4
2004-03-18
SDT05S60SDT05S60
5 Typ. reverse current vs. reverse voltage
I
=f(VR)
R
2
10
µA
1
10
R
10
I
10
10
10
150°C
125°C
100°C
25°C
0
-1
-2
-3
100 150 200 250 300 350 400 450 500
600
V
V
R
6 Transient thermal impedance
Z
= f (tp)
thJC
parameter :
1
SDT05S60
10
K/W
0
10
thJC
-1
Z
10
-2
10
-3
10
-4
10
-7
10
D = t
single pulse
10
/T
p
-6
-5
-4
-3
10
10
10
10
-2
D = 0.50
0.20
0.10
0.05
0.02
0.01
s
t
p
10
0
7 Typ. capacitance vs. reverse voltage
C= f(V
parameter:
C
200
pF
150
125
100
75
50
25
0
10
)
R
T
= 25 °C, f = 1 MHz
C
0
10
1
10
2
V
V
R
10
8 Typ. C stored energy
E
=f(VR)
C
3
µJ
2
C
E
1.5
1
0.5
3
0
0 100 200 300 400
600
V
V
R
Rev. 2.0
Page 5
2004-03-18
9 Typ. capacitive charge vs. current slop
e
SDT05S60SDT05S60
Qc=f(di
F
/dt)
parameter:
20
nC
16
14
c
Q
12
10
8
6
4
2
0
0 100 200 300 400 500 600 700 800
T
= 150 °C
j
IF*0.5
IF*2
I
A/µs
diF/dt
F
1000
Rev. 2.0
Page 6
2004-03-18
TO-220-2-2
A
N
SDT05S60SDT05S60
P
symbol
E
D
U
V
B
H
F
W
J
X
L
G
T
C
M
K
A 9.70 10.10 0.3819 0.3976
B 15.30 15.90 0.6024 0.6260
C 0.65 0.85 0.0256 0.0335
D 3.55 3.85 0.1398 0.1516
E 2.60 3.00 0.1024 0.1181
F 9.00 9.40 0.3543 0.3701
G 13.00 14.00 0.5118 0.5512
H 17.20 17.80 0.6772 0.7008
J 4.40 4.80 0.1732 0.1890
K 0.40 0.60 0.0157 0.0236
L
M
N
P 1.10 1.40 0.0433 0.0551
T
U
V
W
X 0.00 0.40 0.0000 0.0157
dimensions
[mm] [inch]
min ma x mi n ma x
0.41 typ.1.05 ty p.
2.54 ty p. 0.1 ty p.
4.4 typ. 0.173 typ.
2.4 typ. 0.095 typ.
0.26 typ.6.6 typ.
0.51 typ.13.0 typ.
7.5 typ. 0.295 typ.
Rev. 2.0
Page 7
2004-03-18
SDT05S60SDT05S60
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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For information on the types in question please contact your nearest Infineon Technologies Office.
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of the user or other persons may be endangered.
Rev. 2.0
Page 8
2004-03-18
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