SDT02S60SDT02S60
Silicon Carbide Schottky Diode
• Worlds first 600V Schottky diode
• Revolutionary semiconductor
material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
the switching behavior
• No forward recovery
Type Package Ordering Code
SDT02S60 P-TO220-2-2. Q67040-S4511
thinQ! SiC Schottky Diode
Product Summary
Marking
D02S60
V
RRM
Q
c
I
F
Pin 1 Pin 2
C A
600
4.6 nC
2 A
P-TO220-2-2.
V
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous forward current, T
=100°C
C
RMS forward current, f=50Hz
Surge non repetitive forward current, sine halfwave
TC=25°C, tp=10ms
Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
tp=10µs, TC=25°C
i 2t value, T
=25°C, t
C
=10ms ∫i
p
I
I
I
I
I
Repetitive peak reverse voltage V
Surge peak reverse voltage V
Power dissipation, T
=25°C
C
P
Operating and storage temperature T
F
FRMS
FSM
FRM
FMAX
2
dt
RRM
RSM
tot
T
,
st
2 A
2.8
4.1
7.3
17
0.08
600 V
600
15 W
-55... +175
A²s
°C
Rev. 2.0
Page 1
2004-03-22
SDT02S60SDT02S60
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
R
R
thJC
thJA
- - 10 K/W
- - 62
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Diode forward voltage
IF=2A, Tj=25°C
I
=2A, Tj=150°C
F
Reverse current
VR=600V, Tj=25°C
V
=600V, Tj=150°C
R
V
I
F
-
-
R
-
-
1.75
2.2
7
30
2.6
100
500
V
2
µA
Rev. 2.0
Page 2
2004-03-22
SDT02S60SDT02S60
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Total capacitive charge
VR=400V, IF=2A, diF/dt=200A/µs, Tj=150°C
Switching time
VR=400V, IF=2A, diF/dt=200A/µs, Tj=150°C
Total capacitance
VR=1V, TC=25°C, f=1MHz
V
=300V, TC=25°C, f=1MHz
R
V
=600V, TC=25°C, f=1MHz
R
Q
c
t
rr
C
- 4.6 - nC
- n.a. - ns
-
-
-
50
5.2
5.0
pF
-
-
-
Rev. 2.0
Page 3
2004-03-22