SDT02S60SDT02S60
j
g
Silicon Carbide Schottky Diode
• Worlds first 600V Schottky diode
• Revolutionary semiconductor
material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
the switching behavior
• No forward recovery
Type Package Ordering Code
SDT02S60 P-TO220-2-2. Q67040-S4511
thinQ! SiC Schottky Diode
Product Summary
Marking
D02S60
V
RRM
Q
c
I
F
Pin 1 Pin 2
C A
600
4.6 nC
2 A
P-TO220-2-2.
V
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous forward current, T
=100°C
C
RMS forward current, f=50Hz
Surge non repetitive forward current, sine halfwave
TC=25°C, tp=10ms
Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
tp=10µs, TC=25°C
i 2t value, T
=25°C, t
C
=10ms ∫i
p
I
I
I
I
I
Repetitive peak reverse voltage V
Surge peak reverse voltage V
Power dissipation, T
=25°C
C
P
Operating and storage temperature T
F
FRMS
FSM
FRM
FMAX
2
dt
RRM
RSM
tot
T
,
st
2 A
2.8
4.1
7.3
17
0.08
600 V
600
15 W
-55... +175
A²s
°C
Rev. 2.0
Page 1
2004-03-22
SDT02S60SDT02S60
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
R
R
thJC
thJA
- - 10 K/W
- - 62
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Diode forward voltage
IF=2A, Tj=25°C
I
=2A, Tj=150°C
F
Reverse current
VR=600V, Tj=25°C
V
=600V, Tj=150°C
R
V
I
F
-
-
R
-
-
1.75
2.2
7
30
2.6
100
500
V
2
µA
Rev. 2.0
Page 2
2004-03-22
SDT02S60SDT02S60
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Total capacitive charge
VR=400V, IF=2A, diF/dt=200A/µs, Tj=150°C
Switching time
VR=400V, IF=2A, diF/dt=200A/µs, Tj=150°C
Total capacitance
VR=1V, TC=25°C, f=1MHz
V
=300V, TC=25°C, f=1MHz
R
V
=600V, TC=25°C, f=1MHz
R
Q
c
t
rr
C
- 4.6 - nC
- n.a. - ns
-
-
-
50
5.2
5.0
pF
-
-
-
Rev. 2.0
Page 3
2004-03-22
SDT02S60SDT02S60
1 Power dissipation
P
= f (TC)
tot
16
W
12
tot
10
P
8
6
4
2
0
0 20 40 60 80 100 120 140
°C
T
2 Diode forward current
IF= f (TC)
parameter: Tj≤175 °C
2.2
A
1.8
1.6
1.4
F
I
1.2
1
0.8
0.6
0.4
0.2
180
C
0
0 20 40 60 80 100 120 140
°C
T
180
C
3 Typ. forward characteristic
IF = f (VF)
parameter: Tj , tp = 350 µs
4
A
3
2.5
F
I
2
1.5
1
0.5
0
0 0.5 1 1.5 2 2.5 3
150°C
100°C
25°C
4 Typ. forward power dissipation vs.
average forward current
P
F(AV)
W
F(AV)
P
4
V
V
F
) T
=f(I
F
7
d=0.1
d=0.2
5
d=0.5
d=1
4
3
2
1
0
0 0.5 1 1.5 2
=100°C, d = tp/T
C
A
I
F(AV)
3
Rev. 2.0
Page 4
2004-03-22
SDT02S60SDT02S60
5 Typ. reverse current vs. reverse voltage
IR=f(VR)
2
10
µA
1
10
150°C
125°C
100°C
25°C
0
R
I
10
-1
10
-2
10
-3
10
50 150 250 350 450
600
V
V
R
6 Transient thermal impedance
Z
= f (tp)
thJC
parameter : D = tp/T
SDT02S60
2
10
K/W
1
10
0
10
thJC
Z
-1
10
-2
10
10
-7
10
single pulse
-6
10
-5
-4
-3
10
10
10
-2
10
10
-3
-4
D = 0.50
0.20
0.10
0.05
0.02
0.01
s
t
p
10
0
7 Typ. capacitance vs. reverse voltage
C= f(VR)
parameter: TC = 25 °C, f = 1 MHz
26
pF
22
20
18
16
C
14
12
10
8
6
4
2
0
10
1
10
2
V
V
R
10
8 Typ. C stored energy
EC=f(VR)
1.2
µJ
1
0.9
0.8
C
E
0.7
0.6
0.5
0.4
0.3
0.2
0.1
3
0
0 100 200 300 400
600
V
V
R
Rev. 2.0
Page 5
2004-03-22
9 Typ. capacitive charge vs. current slop
e
Qc=f(diF/dt)
parameter: Tj = 150 °C
6
Q
IF*2
nC
4
c
3
2
1
IF*0.5
I
F
SDT02S60SDT02S60
0
100 200 300 400 500 600 700 800
A/µs
diF/dt
1000
Rev. 2.0
Page 6
2004-03-22
TO-220-2-2
A
N
SDT02S60SDT02S60
P
symbol
E
D
U
V
B
H
F
W
J
X
L
G
T
C
M
K
A 9.70 10.10 0.3819 0.3976
B 15.30 15.90 0.6024 0.6260
C 0.65 0.85 0.0256 0.0335
D 3.55 3.85 0.1398 0.1516
E 2.60 3.00 0.1024 0.1181
F 9.00 9.40 0.3543 0.3701
G 13.00 14.00 0.5118 0.5512
H 17.20 17.80 0.6772 0.7008
J 4.40 4.80 0.1732 0.1890
K 0.40 0.60 0.0157 0.0236
L
M
N
P 1.10 1.40 0.0433 0.0551
T
U
V
W
X 0.00 0.40 0.0000 0.0157
dimensions
[mm] [inch]
min max mi n ma x
0.41 typ.1.05 ty p.
2.54 ty p. 0.1 ty p.
4.4 typ. 0.173 typ.
2.4 typ. 0.095 typ.
0.26 typ.6.6 typ.
0.51 typ.13.0 typ.
7.5 typ. 0.295 typ.
Rev. 2.0
Page 7
2004-03-22
SDT02S60SDT02S60
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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For information on the types in question please contact your nearest Infineon Technologies Office.
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Rev. 2.0
Page 8
2004-03-22
This datasheet has been download from:
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