INFINEON SDP10S30, SDT10S30 User Manual
SDP10S30
SDT10S30
Silicon Carbide Schottky Diode
• Revolutionary semiconductor
material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
the switching behavior
• No forward recovery
Type Package Ordering Code
SDP10S30 PG-TO220-3-1. Q67040-S4372
SDT10S30 PG-TO220-2-2. Q67040-S4447
thinQ! SiC Schottky Diode
Product Summary
V
RRM
Q
c
I
F
PG-TO220-2-2. PG-TO220-3-1.
Marking
D10S30
D10S30
Pin 1 Pin 2
n.c. C
C
300
23 nC
10 A
Pin 3
A
A
V
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Continuous forward current, T
=100°C
C
RMS forward current, f=50Hz
Surge non repetitive forward current, sine halfwave
TC=25°C, tp=10ms
Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
tp=10µs, TC=25°C
i 2t value, T
=25°C, t
C
=10ms ∫i
p
Repetitive peak reverse voltage V
Surge peak reverse voltage V
Power dissipation, T
=25°C
C
Operating and storage temperature T
Symbol Value Unit
I
F
I
FRMS
I
FSM
I
FRM
I
FMAX
2
dt
RRM
RSM
P
tot
T
,
j
stg
10 A
14
36
45
100
6.5
300 V
300
65 W
-55... +175
A²s
°C
Rev. 1.2
Page 1
2005-02-17
Thermal Characteristics
SDP10S30
SDT10S30
Parameter
Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case
R
thJC
- - 2.3 K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
Static Characteristics
Diode forward voltage
IF=10A, Tj=25°C
=10A, Tj=150°C
I
F
Reverse current
VR=300V, Tj=25°C
=300V, Tj=150°C
V
R
V
I
F
-
-
R
-
-
1.5
1.5
15
20
1.7
1.9
200
1000
V
µA
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev. 1.2
Page 2
2005-02-17
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
SDP10S30
SDT10S30
Parameter
AC Characteristics
Total capacitive charge
V
=200V, IF=10A, diF/dt=-200A/µs, Tj=150°C
R
Switching time
V
=200V, IF=10A, diF/dt=-200A/µs, Tj=150°C
R
2)
1)
Total capacitance
V
=0V, TC=25°C, f=1MHz
R
V
=150V, TC=25°C, f=1MHz
R
V
=300V, TC=25°C, f=1MHz
R
Symbol Values Unit
min. typ. max.
Q
c
t
rr
C
- 23 - nC
- n.a. - ns
-
-
-
600
55
40
pF
-
-
-
Rev. 1.2
Page 3
2005-02-17
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