Silicon Carbide Schottky Diode
• Worlds first 600V Schottky diode
• Revolutionary semiconductor
material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
the switching behavior
• Ideal diode for Power Factor
Correction up to 800W
1)
• No forward recovery
SDP04S60, SDD04S60
Final data
Product Summary
V
RRM
Q
c
I
F
P-TO220-2-2. P-TO252-3-1. P-TO220-3-1.
SDT04S60
600
13 nC
4 A
V
Type Package Ordering Code
SDP04S60 P-TO220-3-1. Q67040-S4369
SDD04S60 P-TO252-3-1. Q67040-S4368
SDT04S60 P-TO220-2-2. Q67040-S4445
Marking
D04S60
D04S60
D04S60
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Continuous forward current, T
=100°C
C
RMS forward current, f=50Hz
Surge non repetitive forward current, sine halfwave
TC=25°C, tp=10ms
Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
tp=10µs, TC=25°C
i 2t value, T
=25°C, t
C
=10ms ∫i
p
Repetitive peak reverse voltage V
Surge peak reverse voltage V
Power dissipation, T
=25°C
C
Operating and storage temperature T
Symbol Value Unit
I
F
I
FRMS
I
FSM
I
FRM
I
FMAX
2
dt
RRM
RSM
P
tot
T
,
j
stg
Pin 1 PIN 2 PIN 3
n.c. C A
n.c. A C
C A
4 A
5.6
12.5
18
40
0.78
A²s
600 V
600
36.5 W
-55... +175
°C
Page 1
2004-02-11
Thermal Characteristics
Final data
SDP04S60, SDD04S60
SDT04S60
Parameter
Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
P-TO263-3-2: @ min. footprint
2
P-TO263-3-2: @ 6 cm
P-TO252-3-1: @ min. footprint
P-TO252-3-1: @ 6 cm
cooling area 2)
2
cooling area 2)
R
R
R
thJC
thJA
thJA
- - 4.1 K/W
- - 62
-
-
-
-
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
Static Characteristics
-
35
-
-
62
-
75
50
Diode forward voltage
IF=4A, Tj=25°C
I
=4A, Tj=150°C
F
Reverse current
VR=600V, Tj=25°C
=600V, Tj=150°C
V
R
1
2
connection. PCB is vertical without blown air.
V
CCM,
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
= 85VAC, Tj = 150°C, TC =100°C, η = 93%, ∆ I
IN
IN
V
F
I
R
= 30%
-
-
-
-
1.7
2
15
40
1.9
2.4
200
1000
V
µA
Page 2
2004-02-11
SDP04S60, SDD04S60
Final data
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
SDT04S60
Parameter
AC Characteristics
Total capacitive charge
VR=400V, IF=4A, diF/dt=200A/µs, Tj=150°C
Switching time
VR=400V, IF=4A, diF/dt=200A/µs, Tj=150°C
Total capacitance
VR=0V, TC=25°C, f=1MHz
V
=300V, TC=25°C, f=1MHz
R
V
=600V, TC=25°C, f=1MHz
R
Symbol Values Unit
min. typ. max.
Q
c
t
rr
C
- 13 - nC
- n.a. - ns
-
-
-
150
10
7
pF
-
-
-
Page 3
2004-02-11