INFINEON SDP04S60, SDD04S60, SDT04S60 User Manual

Silicon Carbide Schottky Diode
Worlds first 600V Schottky diode
Revolutionary semiconductor
Switching behavior benchmark
No reverse recovery
No temperature influence on
the switching behavior
Ideal diode for Power Factor
Correction up to 800W
1)
No forward recovery
SDP04S60, SDD04S60
Final data
Product Summary
V
RRM
Q
c
I
F
P-TO220-2-2. P-TO252-3-1. P-TO220-3-1.
SDT04S60
600
13 nC
4 A
V
Type Package Ordering Code
SDP04S60 P-TO220-3-1. Q67040-S4369
SDD04S60 P-TO252-3-1. Q67040-S4368
SDT04S60 P-TO220-2-2. Q67040-S4445
Marking
D04S60
D04S60
D04S60
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Continuous forward current, T
=100°C
C
RMS forward current, f=50Hz
Surge non repetitive forward current, sine halfwave
TC=25°C, tp=10ms
Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
tp=10µs, TC=25°C
i 2t value, T
=25°C, t
C
=10ms i
p
Repetitive peak reverse voltage V
Surge peak reverse voltage V
Power dissipation, T
=25°C
C
Operating and storage temperature T
Symbol Value Unit
I
F
I
FRMS
I
FSM
I
FRM
I
FMAX
2
dt
RRM
RSM
P
tot
T
,
j
stg
Pin 1 PIN 2 PIN 3
n.c. C A
n.c. A C
C A
4 A
5.6
12.5
18
40
0.78
A²s
600 V
600
36.5 W
-55... +175
°C
Page 1
2004-02-11
Thermal Characteristics
Final data
SDP04S60, SDD04S60
SDT04S60
Parameter
Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
P-TO263-3-2: @ min. footprint
2
P-TO263-3-2: @ 6 cm
P-TO252-3-1: @ min. footprint
P-TO252-3-1: @ 6 cm
cooling area 2)
2
cooling area 2)
R
R
R
thJC
thJA
thJA
- - 4.1 K/W
- - 62
-
-
-
-
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
Static Characteristics
-
35
-
-
62
-
75
50
Diode forward voltage
IF=4A, Tj=25°C
I
=4A, Tj=150°C
F
Reverse current
VR=600V, Tj=25°C
=600V, Tj=150°C
V
R
1
2
connection. PCB is vertical without blown air.
V
CCM,
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
= 85VAC, Tj = 150°C, TC =100°C, η = 93%, I
IN
IN
V
F
I
R
= 30%
-
-
-
-
1.7
2
15
40
1.9
2.4
200
1000
V
µA
Page 2
2004-02-11
SDP04S60, SDD04S60
Final data
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
SDT04S60
Parameter
AC Characteristics
Total capacitive charge
VR=400V, IF=4A, diF/dt=200A/µs, Tj=150°C
Switching time
VR=400V, IF=4A, diF/dt=200A/µs, Tj=150°C
Total capacitance
VR=0V, TC=25°C, f=1MHz
V
=300V, TC=25°C, f=1MHz
R
V
=600V, TC=25°C, f=1MHz
R
Symbol Values Unit
min. typ. max.
Q
c
t
rr
C
- 13 - nC
- n.a. - ns
-
-
-
150
10
7
pF
-
-
-
Page 3
2004-02-11
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