INFINEON SDP04S60, SDD04S60, SDT04S60 User Manual

Silicon Carbide Schottky Diode

• Worlds first 600V Schottky diode

• Revolutionary semiconductor

material - Silicon Carbide

• Switching behavior benchmark

• No reverse recovery

• No temperature influence on

the switching behavior

• Ideal diode for Power Factor

Correction up to 800W

1)

• No forward recovery

SDP04S60, SDD04S60

Final data

Product Summary

V

RRM

Q

c

I

F

P-TO220-2-2. P-TO252-3-1. P-TO220-3-1.

SDT04S60

600

13 nC

4 A

V

Type Package Ordering Code

SDP04S60 P-TO220-3-1. Q67040-S4369

SDD04S60 P-TO252-3-1. Q67040-S4368

SDT04S60 P-TO220-2-2. Q67040-S4445

Marking

D04S60

D04S60

D04S60

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter

Continuous forward current, T

=100°C

C

RMS forward current, f=50Hz

Surge non repetitive forward current, sine halfwave

TC=25°C, tp=10ms

Repetitive peak forward current

Tj=150°C, TC=100°C, D=0.1

Non repetitive peak forward current

tp=10µs, TC=25°C

i 2t value, T

=25°C, t

C

=10ms ∫i

p

Repetitive peak reverse voltage V

Surge peak reverse voltage V

Power dissipation, T

=25°C

C

Operating and storage temperature T

Symbol Value Unit

I

F

I

FRMS

I

FSM

I

FRM

I

FMAX

2

dt

RRM

RSM

P

tot

T

,

j

stg

Pin 1 PIN 2 PIN 3

n.c. C A

n.c. A C

C A

4 A

5.6

12.5

18

40

0.78

A²s

600 V

600

36.5 W

-55... +175

°C

Page 1

2004-02-11

Thermal Characteristics

Final data

SDP04S60, SDD04S60

SDT04S60

Parameter

Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - case

Thermal resistance, junction - ambient, leaded

SMD version, device on PCB:

P-TO263-3-2: @ min. footprint

2

P-TO263-3-2: @ 6 cm

P-TO252-3-1: @ min. footprint

P-TO252-3-1: @ 6 cm

cooling area 2)

2

cooling area 2)

R

R

R

thJC

thJA

thJA

- - 4.1 K/W

- - 62

-

-

-

-

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol Values Unit

min. typ. max.

Static Characteristics

-

35

-

-

62

-

75

50

Diode forward voltage

IF=4A, Tj=25°C

I

=4A, Tj=150°C

F

Reverse current

VR=600V, Tj=25°C

=600V, Tj=150°C

V

R

1

2

connection. PCB is vertical without blown air.

V

CCM,

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

= 85VAC, Tj = 150°C, TC =100°C, η = 93%, ∆ I

IN

IN

V

F

I

R

= 30%

-

-

-

-

1.7

2

15

40

1.9

2.4

200

1000

V

µA

Page 2

2004-02-11

SDP04S60, SDD04S60

Final data

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

SDT04S60

Parameter

AC Characteristics

Total capacitive charge

VR=400V, IF=4A, diF/dt=200A/µs, Tj=150°C

Switching time

VR=400V, IF=4A, diF/dt=200A/µs, Tj=150°C

Total capacitance

VR=0V, TC=25°C, f=1MHz

V

=300V, TC=25°C, f=1MHz

R

V

=600V, TC=25°C, f=1MHz

R

Symbol Values Unit

min. typ. max.

Q

c

t

rr

C

- 13 - nC

- n.a. - ns

-

-

-

150

10

7

pF

-

-

-

Page 3

2004-02-11

Final data

j

SDP04S60, SDD04S60

SDT04S60

1 Power dissipation

P

= f (TC)

tot

40

W

30

tot

25

P

20

15

10

5

0

0 20 40 60 80 100 120 140

°C

T

2 Diode forward current

I

= f (TC)

F

parameter: T

4.5

A

3.5

3

F

I

2.5

2

1.5

1

0.5

180

C

0

0 20 40 60 80 100 120 140

≤175 °C

j

°C

T

180

C

3 Typ. forward characteristic

I

= f (VF)

F

parameter: T

8

A

6

5

F

I

4

3

2

1

0

0 0.5 1 1.5 2 2.5

, tp = 350 µs

-40°C
25°C
100°C
125°C
150°C

4 Typ. forward power dissipation vs.

average forward current

P

F(AV)

P

3.5

V

V

F

f(I

) T

=100°C, d = tp/T

C

18

=

F

W

14

12

F(AV)

10

8

6

4

2

0

0 1 2 3 4 5

d=0.1
d=0.2
d=0.5
d=1

A

I

F(AV)

7

Page 4

2004-02-11

Final data

SDP04S60, SDD04S60

SDT04S60

5 Typ. reverse current vs. reverse voltage

I

=f(VR)

R

2

10

µA

1

10

0

R

10

I

-1

10

-2

10

-3

10

100 200 300 400

25°C
100°C
125°C
150°C

V

600

V

R

6 Transient thermal impedance

Z

= f (tp)

thJC

parameter : D = t

1

SDP04S60

10

K/W

0

10

thJC

-1

Z

10

-2

10

single pulse

-3

10

-4

10

-7

10

10

/T

p

-6

-5

-4

-3

10

10

10

10

-2

D = 0.50

0.20

0.10

0.05

0.02

0.01

s

t

p

10

0

7 Typ. capacitance vs. reverse voltage

C= f(V

parameter: T

C

125

pF

75

50

25

0

10

)

R

= 25 °C, f = 1 MHz

C

0

10

1

10

2

V

V

R

10

8 Typ. C stored energy

E

=f(VR)

C

2

µJ

1.6

1.4

C

E

1.2

1

0.8

0.6

0.4

0.2

3

0

0 100 200 300 400

600

V

V

R

Page 5

2004-02-11

Final data

e

9 Typ. capacitive charge vs. current slop

SDP04S60, SDD04S60

SDT04S60

Qc=f(di

F

/dt)

parameter: T

14

nC

10

c

Q

8

6

4

2

0
100 200 300 400 500 600 700 800

= 150 °C

j

IF*2

IF*0.5

I

F

A/µs

diF/dt

1000

Page 6

2004-02-11

Final data

SDP04S60, SDD04S60

SDT04S60

P-TO220-3-1

P-TO220-3-1

dimensions

symbol [mm] [inch]

min max min max

A 9.70 10.30 0.3819 0.4055

B 14.88 15.95 0.5858 0.6280

C 0.65 0.86 0.0256 0.0339

D 3.55 3.89 0.1398 0.1531

E 2.60 3.00 0.1024 0.1181

F 6.00 6.80 0.2362 0. 2677

G 13.00 14.00 0.5118 0.5512

H 4.35 4.75 0.1713 0.1870

K 0.38 0.65 0.0150 0.0256

L 0.95 1.32 0.0374 0.0520

M

N 4.30 4.50 0.1693 0.1772

P 1.17 1.40 0.0461 0.0551

T 2.30 2.72 0.0906 0. 1071

2.54 typ. 0.1 typ.

P-TO252 (D-Pak)

dimensions

symbol

A 6.40 6.73 0.2520 0.2650

B 5.25 5.50 0.2067 0.2165

C (0.65) (1.15) (0.0256) (0.0453)

D 0.63 0.89 0.0248 0.0350

E

F 2.19 2.39 0.0862 0.0941

G 0.76 0.98 0.0299 0.0386

H 0.90 1.21 0.0354 0.0476

K 5.97 6.23 0.2350 0.2453

L 9.40 10.40 0.3701 0.4094

M 0.46 0.58 0.0181 0.0228

N 0.87 1.15 0.0343 0.0453

P 0.51 - 0.0201 -

R 5.00 - 0.1969 -

S 4.17 - 0.1642 -

T 0.26 1.02 0.0102 0.0402

U----

[mm] inch]

minmaxminmax

2.28 0.2520

Page 7

2004-02-11

Final data

A

N

SDP04S60, SDD04S60

SDT04S60

TO-220-2-2

P

symbol

E

D

U

V

B

H

F

W

J

X

L

G

T

C

M

K

A 9.70 10.10 0.3819 0.3976

B 15.30 15.90 0.6024 0.6260

C 0.65 0.85 0.0256 0.0335

D 3.55 3.85 0.1398 0.1516

E 2.60 3.00 0.1024 0.1181

F 9.00 9.40 0.3543 0.3701

G 13.00 14.00 0.5118 0.5512

H 17.20 17.80 0.6772 0.7008

J 4.40 4.80 0.1732 0.1890

K 0.40 0.60 0.0157 0.0236

L

M

N

P 1.10 1.40 0.0433 0.0551

T

U

V

W

X 0.00 0.40 0.0000 0.0157

dimensions

[mm] [inch]

min ma x mi n ma x

0.41 typ.1.05 ty p.

2.54 ty p. 0.1 ty p.

4.4 typ. 0.173 typ.

2.4 typ. 0.095 typ.

0.26 typ.6.6 typ.

0.51 typ.13.0 typ.

7.5 typ. 0.295 typ.

Page 8

2004-02-11

SDP04S60, SDD04S60

Final data

Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted
characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.

SDT04S60

Page 9

2004-02-11

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