INFINEON SDP06S60, SDB06S60, SDT06S60 User Manual
SDP06S60, SDB06S60
SDT06S60
Silicon Carbide Schottky Diode
• Worlds first 600V Schottky diode
• Revolutionary semiconductor
material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
P-TO220-2-2. P-TO220-3-1.P-TO220-3.SMD
the switching behavior
• Ideal diode for Power Factor
Correction up to 1200W
1)
• No forward recovery
Type Package Ordering Code
SDP06S60 P-TO220-3-1. Q67040-S4371
SDB06S60 P-TO220-3.SMD Q67040-S4370
SDT06S60 P-TO220-2-2. Q67040-S4446
thinQ! SiC Schottky Diode
Product Summary
Marking
D06S60
D06S60
D06S60
V
RRM
Q
c
I
F
Pin 1 Pin 2
n.c. C
n.c. C A
C A
600
21 nC
6 A
Pin 3
A
V
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Continuous forward current, T
=100°C
C
RMS forward current, f=50Hz
Surge non repetitive forward current, sine halfwave
TC=25°C, tp=10ms
Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
tp=10µs, TC=25°C
i 2t value, T
=25°C, t
C
=10ms ∫i
p
Repetitive peak reverse voltage V
Surge peak reverse voltage V
Power dissipation, T
=25°C
C
Operating and storage temperature T
Symbol Value Unit
I
F
I
FRMS
I
FSM
I
FRM
I
FMAX
2
dt
RRM
RSM
P
tot
T
,
j
stg
6 A
8.4
21.5
28
60
2.3
600 V
600
57.6 W
-55... +175
A²s
°C
Rev. 2.0
Page 1
2004-03-23
Thermal Characteristics
SDP06S60, SDB06S60
SDT06S60
Parameter
Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
P-TO263-3-2: @ min. footprint
2
P-TO263-3-2: @ 6 cm
P-TO252-3-1: @ min. footprint
P-TO252-3-1: @ 6 cm
cooling area 2)
2
cooling area 2)
R
R
R
thJC
thJA
thJA
- - 2.6 K/W
- - 62
-
-
-
-
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
Static Characteristics
-
35
-
-
62
-
75
50
Diode forward voltage
IF=6A, Tj=25°C
I
=6A, Tj=150°C
F
Reverse current
VR=600V, Tj=25°C
=600V, Tj=150°C
V
R
1
2
connection. PCB is vertical without blown air.
V
CCM,
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
= 85VAC, Tj = 150°C, TC =100°C, η = 93%, ∆ I
IN
IN
V
F
I
R
= 30%
-
-
-
-
1.5
1.7
20
50
1.7
2.1
200
1000
V
µA
Rev. 2.0
Page 2
2004-03-23
SDP06S60, SDB06S60
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
SDT06S60
Parameter
AC Characteristics
Total capacitive charge
VR=400V, IF=6A, diF/dt=200A/µs, Tj=150°C
Switching time
VR=400V, IF=6A, diF/dt=200A/µs, Tj=150°C
Total capacitance
VR=0V, TC=25°C, f=1MHz
=300V, TC=25°C, f=1MHz
V
R
=600V, TC=25°C, f=1MHz
V
R
Symbol Values Unit
min. typ. max.
Q
c
t
rr
C
- 21 - nC
- n.a. - ns
-
-
-
300
20
15
pF
-
-
-
Rev. 2.0
Page 3
2004-03-23
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