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SDB06S60
User Manual
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INFINEON SDP06S60, SDB06S60, SDT06S60 User Manual

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SDP06S60, SDB06S60
SDT06S60
Silicon Carbide Schottky Diode
• Worlds first 600V Schottky diode
material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
P-TO220-2-2. P-TO220-3-1.P-TO220-3.SMD
the switching behavior
• Ideal diode for Power Factor
Correction up to 1200W
1)
• No forward recovery
Type Package Ordering Code
SDP06S60 P-TO220-3-1. Q67040-S4371
SDB06S60 P-TO220-3.SMD Q67040-S4370
SDT06S60 P-TO220-2-2. Q67040-S4446
thinQ! SiC Schottky Diode
Product Summary
Marking
D06S60
D06S60
D06S60
V
RRM
Q
c
I
F
Pin 1 Pin 2
n.c. C
n.c. C A
C A
600
21 nC
6 A
Pin 3
A
V
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Continuous forward current, T
=100°C
C
RMS forward current, f=50Hz
Surge non repetitive forward current, sine halfwave
TC=25°C, tp=10ms
Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
tp=10µs, TC=25°C
i 2t value, T
=25°C, t
C
=10ms ∫i
p
Repetitive peak reverse voltage V
Surge peak reverse voltage V
Power dissipation, T
=25°C
C
Operating and storage temperature T
Symbol Value Unit
I
F
I
FRMS
I
FSM
I
FRM
I
FMAX
2
dt
RRM
RSM
P
tot
T
,
j
stg
6 A
8.4
21.5
28
60
2.3
600 V
600
57.6 W
-55... +175
A²s
°C
Rev. 2.0
Page 1
2004-03-23
Thermal Characteristics
SDP06S60, SDB06S60
SDT06S60
Parameter
Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
P-TO263-3-2: @ min. footprint
2
P-TO263-3-2: @ 6 cm
P-TO252-3-1: @ min. footprint
P-TO252-3-1: @ 6 cm
cooling area 2)
2
cooling area 2)
R
R
R
thJC
thJA
thJA
- - 2.6 K/W
- - 62
-
-
-
-
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
Static Characteristics
-
35
-
-
62
-
75
50
Diode forward voltage
IF=6A, Tj=25°C
I
=6A, Tj=150°C
F
Reverse current
VR=600V, Tj=25°C
=600V, Tj=150°C
V
R
1
2
connection. PCB is vertical without blown air.
V
CCM,
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
= 85VAC, Tj = 150°C, TC =100°C, η = 93%, ∆ I
IN
IN
V
F
I
R
= 30%
-
-
-
-
1.5
1.7
20
50
1.7
2.1
200
1000
V
µA
Rev. 2.0
Page 2
2004-03-23
SDP06S60, SDB06S60
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
SDT06S60
Parameter
AC Characteristics
Total capacitive charge
VR=400V, IF=6A, diF/dt=200A/µs, Tj=150°C
Switching time
VR=400V, IF=6A, diF/dt=200A/µs, Tj=150°C
Total capacitance
VR=0V, TC=25°C, f=1MHz
=300V, TC=25°C, f=1MHz
V
R
=600V, TC=25°C, f=1MHz
V
R
Symbol Values Unit
min. typ. max.
Q
c
t
rr
C
- 21 - nC
- n.a. - ns
-
-
-
300
20
15
pF
-
-
-
Rev. 2.0
Page 3
2004-03-23
SDP06S60, SDB06S60
j
SDT06S60
1 Power dissipation
P
= f (TC)
tot
60
W
50
45
40
tot
P
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140
°C
T
2 Diode forward current
= f (TC)
I
F
parameter:
6.5
A
5.5
4.5
F
I
3.5
2.5
1.5
0.5
180
C
Tj≤175 °C
5
4
3
2
1
0
0 20 40 60 80 100 120 140
°C
T
180
C
3 Typ. forward characteristic
= f (VF)
I
F
parameter:
12
A
10
F
I
T
, tp = 350 µs
150°C 125°C 100°C 25°C
9
-40°C
8
7
6
5
4
3
2
1
0
0 0.5 1 1.5
4 Typ. forward power dissipation vs.
average forward current
P
V
2.5
V
F
=
f(I
) T
F(AV)
F
28
=100°C, d = tp/T
C
W
d=0.1
24
d=0.2 d=0.5
22
d=1
20
18
F(AV)
P
16
14
12
10
8
6
4
2
0
0 2 4 6 8
A
I
F(AV)
12
Rev. 2.0
Page 4
2004-03-23
SDP06S60, SDB06S60
SDT06S60
5 Typ. reverse current vs. reverse voltage
=f(VR)
I
R
2
10
µA
1
10
R
10
I
10
10
10
150°C 125°C 100°C 25°C
0
-1
-2
-3
100 150 200 250 300 350 400 450 500
600
V
V
R
6 Transient thermal impedance
Z
= f (tp)
thJC
parameter :
1
10
K/W
0
10
thJC
-1
Z
10
-2
10
-3
10
-4
10
10
SDP06S60
single pulse
-7
10
D = t
-6
10
/T
p
-5
-4
-3
10
10
10
-2
D = 0.50
0.20
0.10
0.05
0.02
0.01
s
t
p
10
0
7 Typ. capacitance vs. reverse voltage
C= f(V
parameter: T
C
250
pF
150
100
50
0
10
)
R
= 25 °C, f = 1 MHz
C
0
10
1
10
2
V
V
R
10
8 Typ. C stored energy
E
=f(VR)
C
3.5
µJ
2.5
C
E
2
1.5
1
0.5
3
0
0 100 200 300 400
600
V
V
R
Rev. 2.0
Page 5
2004-03-23
9 Typ. capacitive charge vs. current slop
e
SDP06S60, SDB06S60
SDT06S60
Qc=f(di
F
/dt)
parameter:
22
nC
18
16
c
14
Q
12
10
8
6
4
2
0 100 200 300 400 500 600 700 800
T
= 150 °C
j
IF*2
IF*0.5
A/µs
diF/dt
I
F
1000
Rev. 2.0
Page 6
2004-03-23
SDP06S60, SDB06S60
SDT06S60
P-TO220-3-1
P-TO220-3-1
dimensions
symbol [mm] [inch]
min max min max
A 9.70 10.30 0.3819 0.4055
B 14.88 15.95 0.5858 0.6280
C 0.65 0.86 0.0256 0.0339
D 3.55 3.89 0.1398 0.1531
E 2.60 3.00 0.1024 0.1181
F 6.00 6.80 0.2362 0.2677
G 13.00 14.00 0.5118 0.5512
H 4.35 4.75 0.1713 0.1870
K 0.38 0.65 0.0150 0.0256
L 0.95 1.32 0.0374 0.0520
M
N 4.30 4.50 0.1693 0.1772
P 1.17 1.40 0.0461 0.0551
T 2.30 2.72 0.0906 0.1071
2.54 typ. 0.1 typ.
TO-220-3-45 (P-TO220SMD)
dimensions
symbol
A 9.80 10.00 0.3858 0.3937
B
C 1.25 1.75 0.0492 0.0689
D 0.95 1.15 0.0374 0.0453
E
F 0.72 0.85 0.0283 0.0335
G
H 4.30 4.50 0.1693 0.1772
K 1.28 1.40 0.0504 0.0551
L 9.00 9.40 0.3543 0.3701
M 2.30 2.50 0.0906 0.0984
N
P 0.00 0.20 0.0000 0.0079
Q 3.30 3.90 0.1299 0.1535
R
S 1.70 2.50 0.0669 0.0984
T 0.50 0.65 0.0197 0.0256
U
V
W
X
Y
Z
[mm] [inch]
min max mi n max
1.3 typ. 0.0512 ty p.
2.54 ty p. 0.1 ty p.
5.08 ty p. 0.2 ty p.
14.1 ty p. 0.5551 typ.
8° ma x 8° ma x
10.8 ty p. 0.4252 typ.
1.35 ty p. 0.0532 typ.
6.43 ty p. 0.2532 typ.
4.60 ty p. 0.1811 typ.
9.40 ty p. 0.3701 typ.
16.15 ty p. 0.6358 ty p.
Rev. 2.0
Page 7
2004-03-23
SDP06S60, SDB06S60
A
N
SDT06S60
TO-220-2-2
P
symbol
E
D
U
V
B
H
F
W
J
X
L
G
T
C
M
K
A 9.70 10.10 0.3819 0.3976
B 15.30 15.90 0.6024 0.6260
C 0.65 0.85 0.0256 0.0335
D 3.55 3.85 0.1398 0.1516
E 2.60 3.00 0.1024 0.1181
F 9.00 9.40 0.3543 0.3701
G 13.00 14.00 0.5118 0.5512
H 17.20 17.80 0.6772 0.7008
J 4.40 4.80 0.1732 0.1890
K 0.40 0.60 0.0157 0.0236
L
M
N
P 1.10 1.40 0.0433 0.0551
T
U
V
W
X 0.00 0.40 0.0000 0.0157
dimensions
[mm] [inch]
min ma x min ma x
0.41 typ.1.05 ty p.
2.54 ty p. 0.1 ty p.
4.4 typ. 0.173 typ.
2.4 typ. 0.095 typ.
0.26 typ.6.6 typ.
0.51 typ.13.0 typ.
7.5 typ. 0.295 typ.
Rev. 2.0
Page 8
2004-03-23
SDP06S60, SDB06S60
SDT06S60
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.0
Page 9
2004-03-23
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
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