INFINEON PW60R075CP User Manual

IPW60R075CP

CoolMOS

TM

Power Transistor

Features

• Lowest figure-of-merit R

ON

x Q

g

• Extreme dv/dt rated

• High peak current capability

• Qualified according to JEDEC

1)

for target applications

• Pb-free lead plating; RoHS compliant

• Ultra low gate charge

CoolMOS CP is designed for:

• Hard switching SMPS topologies for Server and Telecom

Product Summary

V

@ T

DS

j,max

R

DS(on),max

Q

g,typ

650 V

0.075

87 nC

PG-TO247-3

Ω

Type Package Marking

IPW60R075CP PG-TO247-3 6R075P

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Avalanche energy, repetitive t

Avalanche current, repetitive t

MOSFET dv /dt ruggedness dv /dt

Gate source voltage

Power dissipation

=25 °C, unless otherwise specified

j

I

D

TC=25 °C

T

2)

AR

2),3)

I

D,pulse

E

AS

E

AR

I

AR

TC=25 °C

ID=11 A, VDD=50 V

V

GS

static V

AC (f >1 Hz)

P

tot

TC=25 °C

=100 °C

C

=0...480 V

DS

Value

39

A

25

130

1150 mJ

1.7

11

50

A

V/ns

±20

±30

313

W

Operating and storage temperature

T

j

stg

-55 ... 150

°C

, T

Mounting torque M3 and M3.5 screws 60 Ncm

Rev. 2.2 page 1 2008-03-13

Maximum ratings, at Tj=25 °C, unless otherwise specified

IPW60R075CP

Parameter Symbol Conditions Unit

Continuous diode forward current

Diode pulse current

Reverse diode dv /dt

2)

4)

I

S

I

S,pulse

T

C

=25 °C

dv /dt 15 V/ns

Parameter Symbol Conditions Unit

Value

26

117

Values

A

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

Thermal resistance, junction ambient

Soldering temperature, wavesoldering only allowed at leads

Electrical characteristics, at T

R

thJC

R

thJA

T

sold

=25 °C, unless otherwise specified

j

leaded - - 62

1.6 mm (0.063 in.) from case for 10 s

- - 0.4 K/W

- - 260 °C

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

V

(BR)DSSVGS

V

GS(th)

I

DSS

I

GSS

R

DS(on)

R

G

=0 V, ID=250 µA

VDS=VGS, ID=1.2 mA

VDS=600 V, VGS=0 V, T

=25 °C

j

V

=600 V, VGS=0 V,

DS

T

=150 °C

j

VGS=20 V, VDS=0 V

VGS=10 V, ID=26 A, T

=25 °C

j

V

=10 V, ID=26 A,

GS

T

=150 °C

j

600 - - V

2.5 3 3.5

--5µA

-50-

- - 100 nA

- 0.068 0.075

- 0.18 -

f =1 MHz, open drain - 1.3 -

Ω

Rev. 2.2 page 2 2008-03-13

IPW60R075CP

Parameter Symbol Conditions Unit

Values

min. typ. max.

Dynamic characteristics

Input capacitance

Output capacitance

Effective output capacitance, energy

5)

6)

Rise time

Turn-off delay time

Fall time

C

t

iss

oss

o(er)

o(tr)

d(on)

r

d(off)

f

=0 V, VDS=100 V,

V

GS

f =1 MHz

=0 V, VDS=0 V

V

GS

to 480 V

V

=400 V,

DD

V

=10 V, ID=26 A,

GS

=7.6 Ω

R

G

- 4000 - pF

- 190 -

- 180 -

- 480 -

-40-ns

-17-

- 110 -

-7-

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

Q

V

gs

gd

g

plateau

V

=400 V, ID=26 A,

DD

V

=0 to 10 V

GS

-20-nC

-30-

- 87 116

- 5.0 - V

Reverse Diode

Diode forward voltage

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

1)

J-STD20 and JESD22

2)

Pulse width tp limited by T

3)

Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.

4)

ISD≤ID, di/dt≤100A/µs, V

5)

C

is a fixed capacitance that gives the same stored energy as C

o(er)

6)

C

is a fixed capacitance that gives the same charging time as C

o(tr)

DClink

j,max

=400V, V

V

SD

t

rr

Q

rr

I

rrm

peak<V(BR)DSS

VGS=0 V, IF=26 A, T

=25 °C

j

VR=400 V, IF=IS,

di

/dt =100 A/µs

F

, Tj<T

, identical low side and high side switch

jmax

- 0.9 1.2 V

- 500 - ns

-15-µC

-58-A

while VDS is rising from 0 to 80% V

oss

while VDS is rising from 0 to 80% V

oss

DSS.

Rev. 2.2 page 3 2008-03-13