INFINEON SMBT3904, MMBT3904, SMBT3904L3, SMBT3904S, SMBT3904U User Manual
NPN Silicon Switching Transistors
g
• High DC current gain: 0.1 mA to 100 mA
• Low collector-emitter saturation voltage
• For SMBT3904S / SMBT3904U:
Two (galvanic) internal isolated transistors
with good matching in one package
• Complementary types: SMBT3906... MMBT3906
• SMBT3904S / U: For orientation in reel
see package information below
SMBT3906S/U
C1 B2 E2
6 54
SMBT3904...MMBT3904
TR1
TR2
321
C2B1E1
EHA07178
Type Marking Pin Configuration Package
SMBT3904/ MMBT3904
SMBT3904L3*
SMBT3904S
SMBT3904U
s1A
1A
s1A
s1A
1=B
1=B
1=E1
1=E1
2=E
2=E
2=B1
2=B1
3=C
3=C
3=C2
3=C2
-
-
4=E2
4=E2
-
-
5=B2
5=B2
-
-
6=C1
6=C1
SOT23
TSLP-3-4
SOT363
SC74
* Preliminary data
Maximum Ratings
Parameter
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Total power dissipation-
T
≤ 69°C
S
T
≤ tbd°C
S
T
≤ 115°C
S
T
≤ 105°C
S
Symbol Value Unit
40 V
60
6
200 mA
mW
C
P
CEO
CBO
EBO
tot
330
250
250
330
Junction temperature T
Storage temperature T
j
st
1
150 °C
-65 ... 150
2006-07-11
Thermal Resistance
Parameter
SMBT3904...MMBT3904
Symbol Value Unit
Junction - soldering point1)
SMBT3904/ MMBT3904
SMBT3904L3
SMBT3904S
SMBT3904U
Electrical Characteristics at T
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
= 1 mA, IB = 0
C
Collector-base breakdown voltage
I
= 10 µA, IE = 0
C
Emitter-base breakdown voltage
I
= 10 µA, IC = 0
E
R
thJS
K/W
≤ 245
≤ tbd
≤ 140
≤ 135
Symbol Values Unit
min. typ. max.
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
40 - -
60 - -
6 - -
V
Collector-base cutoff current
V
= 30 V, IE = 0
CB
DC current gain2)
I
= 100 µA, VCE = 1 V
C
I
= 1 mA, VCE = 1 V
C
I
= 10 mA, VCE = 1 V
C
I
= 50 mA, VCE = 1 V
C
I
= 100 mA, VCE = 1 V
C
Collector-emitter saturation voltage2)
I
= 10 mA, IB = 1 mA
C
I
= 50 mA, IB = 5 mA
C
Base emitter saturation voltage2)
I
= 10 mA, IB = 1 mA
C
I
= 50 mA, IB = 5 mA
C
1
For calculation of R
2
Pulse test: t < 300µs; D < 2%
please refer to Application Note Thermal Resistance
thJA
I
CBO
h
FE
V
CEsat
V
BEsat
- - 50 nA
40
70
100
60
30
-
-
0.65
-
-
-
-
-
-
-
-
-
-
-
-
300
-
-
0.2
0.3
0.85
0.95
-
V
2
2006-07-11
SMBT3904...MMBT3904
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
AC Characteristics
Transition frequency
I
= 10 mA, VCE = 20 V, f = 100 MHz
C
Collector-base capacitance
V
= 5 V, f = 1 MHz
CB
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz
EB
Delay time
V
= 3 V, IC = 10 mA, IB1 = 1 mA,
CC
V
BE(off)
= 0.5 V
Rise time
V
= 3 V, IC = 10 mA, IB1 = 1 mA,
CC
V
BE(off)
= 0.5 V
Symbol Values Unit
min. typ. max.
f
C
C
t
t
T
cb
eb
d
r
300 - - MHz
- - 3.5 pF
- - 8
- - 35 ns
- - 35
Storage time
V
= 3 V, IC = 10 mA, IB1 = I
CC
B2
Fall time
V
= 3 V, IC = 10 mA, IB1 = IB2 = 1 mA
CC
Noise figure
I
= 100 µA, VCE = 5 V, f = 1 kHz,
C
∆ f = 200 Hz, R
= 1 kΩ
S
= 1 mA
t
t
F
stg
f
- - 200
- - 50
- - 5 dB
3
2006-07-11
Test circuits
Delay and rise time
D = 2%300 ns
+10.9 V
0
-0.5 V
10 k
Ω
SMBT3904...MMBT3904
+3.0 V
Ω
275
C
<4.0 pF
<1.0 ns
Storage and fall time
<<
1
t
1
D = 2%
+10.9 V
0
EHN00061
+3.0 V
µs50010 t
275
Ω
10
Ω
k
C
-9.1
V
<1.0
ns
1N916
4
<4.0 pF
EHN00062
2006-07-11
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