INFINEON SMBT2907A, MMBT2907A User Manual

PNP Silicon Switching Transistor

• High DC current gain: 0.1 mA to 500 mA

SMBT2907A/MMBT2907A

• Low collector-emitter saturation voltage

3

• Complementary type:

SMBT2222A / MMBT2222A (NPN)

Type Marking Pin Configuration Package

SMBT2907A/MMBT2907A s2F

1 = B 2 = E 3 = C

SOT23

Maximum Ratings

Parameter

Collector-emitter voltage V

Collector-base voltage V

Emitter-base voltage V

Collector current I

Total power dissipation-

≤ 77 °C

T

S

Junction temperature T

Symbol Value Unit

60 V

60

5

600 mA

330 mW

150 °C

C

P

CEO

CBO

EBO

tot

j

2

1

Storage temperature T

stg

-65 ... 150

Thermal Resistance
Parameter Symbol Value Unit

Junction - soldering point

1

For calculation of R

please refer to Application Note Thermal Resistance

thJA

1)

R

thJS

≤ 220

K/W

1

2006-03-20

SMBT2907A/MMBT2907A

Electrical Characteristics at T

= 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

= 10 mA, IB = 0

C

Collector-base breakdown voltage

I

= 10 µA, IE = 0

C

Emitter-base breakdown voltage

I

= 10 µA, IC = 0

E

Collector-base cutoff current

V

= 50 V, IE = 0

CB

V

= 50 V, IE = 0 , TA = 150 °C

CB

Emitter-base cutoff current

V

= 5 V, IC = 0

EB

DC current gain1)

I

= 100 µA, VCE = 10 V

C

I

= 1 mA, VCE = 10 V

C

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

EBO

h

FE

60 - -

60 - -

5 - -

-

-

-

-

0.01

10

- - 10 nA

75

100

-

-

-

-

V

µA

-

I

= 10 mA, VCE = 10 V

C

I

= 150 mA, VCE = 10 V

C

I

= 500 mA, VCE = 10 V

C

Collector-emitter saturation voltage1)

I

= 150 mA, IB = 15 mA

C

I

= 500 mA, IB = 50 mA

C

Base emitter saturation voltage-1)

I

= 150 mA, IB = 15 mA

C

I

= 500 mA, IB = 50 mA

C

1

Puls test: t ≤ 300µs, D = 2%

V

CEsat

V

BEsat

100

100

50

-

-

-

-

-

-

-

-

-

-

-

-

300

-

0.4

1.6

1.3

2.6

V

2

2006-03-20

SMBT2907A/MMBT2907A

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

AC Characteristics

Transition frequency

= 20 mA, VCE = 20 V, f = 100 MHz

I

C

Collector-base capacitance

= 10 V, f = 1 MHz

V

CB

Emitter-base capacitance

V

= 0.5 V, f = 1 MHz

EB

Delay time

V

= 30 V, IC = 150 mA, IB1 = 15 mA,

CC

V

BE(off)

= 0.5 V

Rise time

= 30 V, IC = 150 mA, IB1 = 15 mA,

V

CC

V

BE(off)

= 0.5 V

Symbol Values Unit

min. typ. max.

f

C

C

t

t

T

cb

eb

d

r

200 - - MHz

- - 8 pF

- - 30

- - 10 ns

- - 40

Storage time

= 30 V, IC = 150 mA, IB1 = IB2 = 15mA

V

CC

Fall time

= 30 V, IC = 150 mA, IB1 = IB2 = 15mA

V

CC

t

t

stg

f

- - 80

- - 30

3

2006-03-20