INFINEON SMBT2222A, MMBT2222A User Manual

NPN Silicon Switching Transistor

• High DC current gain: 0.1 mA to 500 mA

SMBT2222A/MMBT2222A

• Low collector-emitter saturation voltage

3

• Complementary type: SMBT2907AW (PNP)

Type Marking Pin Configuration Package

SMBT2222A/MMBT2222A s1P

1 = B 2 = E 3 = C

SOT23

Maximum Ratings

Parameter

Collector-emitter voltage V

Collector-base voltage V

Emitter-base voltage V

Collector current I

Total power dissipation-

≤ 77 °C

T

S

Junction temperature T

Symbol Value Unit

40 V

75

6

600 mA

330 mW

150 °C

C

P

CEO

CBO

EBO

tot

j

2

1

Storage temperature T

stg

-65 ... 150

Thermal Resistance
Parameter Symbol Value Unit

Junction - soldering point

1

For calculation of R

please refer to Application Note Thermal Resistance

thJA

1)

R

thJS

≤ 220

K/W

1

2006-05-12

SMBT2222A/MMBT2222A

Electrical Characteristics at T

= 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

= 10 mA, IB = 0

C

Collector-base breakdown voltage

I

= 10 µA, IE = 0

C

Emitter-base breakdown voltage

I

= 10 µA, IC = 0

E

Collector-base cutoff current

V

= 60 V, IE = 0

CB

V

= 60 V, IE = 0 , TA = 150 °C

CB

Emitter-base cutoff current

V

= 3 V, IC = 0

EB

DC current gain1)

I

= 100 µA, VCE = 10 V

C

I

= 1 mA, VCE = 10 V

C

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

EBO

h

FE

40 - -

75 - -

6 - -

-

-

-

-

0.01

10

- - 10 nA

35

50

-

-

-

-

V

µA

-

I

= 10 mA, VCE = 10 V

C

I

= 150 mA, VCE = 1 V

C

I

= 150 mA, VCE = 10 V

C

I

= 500 mA, VCE = 10 V

C

Collector-emitter saturation voltage1)

I

= 150 mA, IB = 15 mA

C

I

= 500 mA, IB = 50 mA

C

Base emitter saturation voltage1)

I

= 150 mA, IB = 15 mA

C

I

= 500 mA, IB = 50 mA

C

1

Pulse test: t < 300µs; D < 2%

V

CEsat

V

BEsat

75

50

100

40

-

-

0.6

-

-

-

-

-

-

-

-

-

-

-

300

-

0.3

1

1.2

2

V

2

2006-05-12

SMBT2222A/MMBT2222A

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

AC Characteristics

Transition frequency

I

= 20 mA, VCE = 20 V, f = 100 MHz

C

Collector-base capacitance

V

= 10 V, f = 1 MHz

CB

Emitter-base capacitance

V

= 0.5 V, f = 1 MHz

EB

Short-circuit input impedance

I

= 1 mA, VCE = 10 V, f = 1 kHz

C

I

= 10 mA, VCE = 10 V, f = 1 kHz

C

Open-circuit reverse voltage transf. ratio

I

= 1 mA, VCE = 10 V, f = 1 kHz

C

I

= 10 mA, VCE = 10 V, f = 1 kHz

C

Symbol Values Unit

min. typ. max.

f

C

C

h

h

T

cb

eb

11e

12e

300 - - MHz

- 2.5 5 pF

- - 35

2

0.25

-

-

-

-

-

-

8

1.25

8

4

kΩ

10

-4

Short-circuit forward current transf. ratio

I

= 1 mA, VCE = 10 V, f = 1 kHz

C

I

= 10 mA, VCE = 10 V, f = 1 kHz

C

Open-circuit output admittance

I

= 1 mA, VCE = 10 V, f = 1 kHz

C

I

= 10 mA, VCE = 10 V, f = 1 kHz

C

Delay time

V

= 30 V, IC = 150 mA, IB1 = 15 mA,

CC

V

BE(off)

= 0.5 V

Rise time

V

= 30 V, IC = 150 mA, IB1 = 15 mA,

CC

V

BE(off)

= 0.5 V

Storage time

V

= 30 V, IC = 150 mA, IB1 = IB2 = 15mA

CC

Fall time

V

= 30 V, IC = 150 mA, IB1 = IB2 = 15mA

CC

Noise figure

h

h

t

t

t

t

F

21e

22e

d

r

stg

f

50

75

5

25

-

-

-

-

300

375

35

200

- - 10 ns

- - 25

- - 225

- - 60

- - 4 dB

-

µS

I

= 100 µA, VCE = 10 V, f = 1 kHz,

C

∆ f = 200 Hz, R

= 1 kΩ

S

3

2006-05-12