INFINEON ITS 724G User Manual
PROFET® ITS 724G
Smart High-Side Power Switch
For Industrial Applications
Four Channels: 4 x 90mΩ
Status Feedback
Product Summary Package
Operating Voltage V
Operating Temperature T
5.5...40V
bb
a
-30…+85°C
Active channels one four parallel
On-state Resistance RON
Nominal load current I
Current limitation I
L(NOM)
L(SCr)
90mΩ 22.5mΩ
3.3A 7.3A
12A 12A
General Description
• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOS
• Providing embedded protective functions
technology.
PG-DSO-20
Applications
• µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads in industrial
applications
• All types of resistive, inductive and capacitve loads
• Most suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
• Very low standby current
• CMOS compatible input
• Improved electromagnetic compatibility (EMC)
• Fast demagnetization of inductive loads
• Stable behaviour at undervoltage
• Wide operating voltage range
• Logic ground independent from load ground
Protection Functions Block Diagram
• Short circuit protection
• Overload protection
• Current limitation
• Thermal shutdown
• Overvoltage protection (including load dump) with external
resistor
• Reverse battery protection with external resistor
• Loss of ground and loss of V
protection
bb
• Electrostatic discharge protection (ESD)
Diagnostic Function
• Diagnostic feedback with open drain output
• Open load detection in OFF-state
• Feedback of thermal shutdown in ON-state
IN1
ST1/2
IN2
IN3
ST3/4
IN4
Vbb
Logic
Channel 1
Channel 2
Logic
Channel 3
Channel 4
GND
Load 1
Load 2
Load 3
Load 4
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PROFET® ITS 724G
p
g
Functional diagram
overvoltage
rotection
internal
e supply
volta
IN1
ESD
. channel 1
ST1/2
IN2
GND1/2
IN3
ST3/4
IN4
GND3/4
logic
gate
control
+
charge
pump
temperature
sensor
Open load
detection
control and protection circuit
of
channel 2
control and protection circuit
of
channel 3
control and protection circuit
of
channel 4
current limit
clamp for
inductive load
reverse
battery
protection
VBB
OUT1
LOAD
OUT2
OUT3
OUT4
Infineon Technologies AG 2 of 14 2006-Mar-28
PROFET® ITS 724G
Pin Definitions and Functions
Pin Symbol Function
1,10,
11,12,
15,16,
19,20
3 IN1
5 IN2
7 IN3
9 IN4
18 OUT1
17 OUT2
14 OUT3
13 OUT4
4 ST1/2
8 ST3/4 open drain, low on failure
2 GND1/2
6 GND3/4
V
bb
Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 2 and also for low
thermal resistance
Input 1,2,3,4 activates channel 1,2,3,4 in case
of logic high signal
Output 1,2,3,4 protected high-side power output
of channel 1,2,3,4. Design the wiring for the
max. short circuit current
Diagnostic feedback 1/2,3/4 of channel 1,2,3,4
Ground of chip 1 (channel 1,2)
Ground of chip 2 (channel 3,4)
Pin configuration
(top view)
V
1 • 20 V
bb
GND1/2 2 19 Vbb
IN1 3 18 OUT1
ST1/2 4 17 OUT2
IN2 5 16 Vbb
GND3/4 6 15 Vbb
IN3 7 14 OUT3
ST3/4 8 13 OUT4
IN4 9 12 Vbb
Vbb 10 11 Vbb
bb
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PROFET® ITS 724G
Maximum Ratings at T
= 25°C unless otherwise specified
j
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 6) Vbb 43 V
Supply voltage for full short circuit protection
T
= -40 ...+150°C
j,start
Vbb 36 V
Load current (Short-circuit current, see page 6) IL self-limited A
3
Load dump protection1) V
2)
R
= 2 Ω, t
I
= 400 ms; IN = low or high,
d
LoadDump
each channel loaded with R
= VA + Vs, VA = 13.5 V
= 13.5 Ω,
L
Junction temperature
Operating temperature range
Storage temperature range
Power dissipation (DC)4) Ta = 25°C:
V
Load dump
Tj
Ta
T
stg
P
3.6
tot
)
60 V
(all channels active) Ta = 85°C:
Maximal switchable inductance, single pulse
V
= 12V, T
bb
IL = 3.3 A, E
IL = 4.7 A, E
IL = 7.3 A, E
= 150°C4), see diagrams on page 10
j,start
= 120 mJ, 0 Ω one channel:
AS
= 140 mJ, 0 Ω two parallel channels:
AS
= 160 mJ, 0 Ω four parallel channels:
AS
Electrostatic discharge capability (ESD) IN:
ZL
V
1.0
ESD
(Human Body Model) ST:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
R=1.5kΩ; C=100pF
Input voltage (DC) see internal circuit diagram page 9 VIN -10 ... +16 V
Current through input pin (DC)
Pulsed current through input pin
Current through status pin (DC)
5)
I
IN
I
INp
IST
+150
°C
-30 ... +85
-40 ... +105
W
1.9
16,5
mH
19
18
kV
4.0
8.0
±0.3
mA
±5.0
±5.0
1)
Supply voltages higher than V
resistor for the GND connection is recommended.
2)
RI = internal resistance of the load dump test pulse generator
3)
V
Load dump
4)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
connection. PCB is vertical without blown air. See page 14
5)
only for testing
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
require an external current limit for the GND and status pins (a 150Ω
bb(AZ)
2
(one layer, 70µm thick) copper area for V
bb
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PROFET® ITS 724G
Thermal Characteristics
Parameter and Conditions Symbol Values Unit
Thermal resistance
junction - soldering point
6)7)
each channel: R
junction – ambient6)
@ 6 cm2 cooling area one channel active:
all channels active:
min typ max
R
thjs
thja
-- -- 15
--
--
42
34
--
--
K/W
Electrical Characteristics
Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = -40...+150°C, V
Load Switching Capabilities and Characteristics
= 12 V unless otherwise specified
bb
min typ max
On-state resistance (Vbb to OUT); I
= 2 A
L
each channel, Tj = 25°C:
T
= 150°C:
j
two parallel channels, Tj = 25°C:
four parallel channels, Tj = 25°C:
see diagram, page 11
Nominal load current one channel active:
two parallel channels active:
four parallel channels active:
Device on PCB
Output current while GND disconnected or pulled up
V
= 32 V, V
bb
see diagram page 9
Turn-on time
Turn-off time IN to 10% V
R
= 12 Ω
L
Slew rate on 9) 10 to 30% V
Slew rate off 9) 70 to 40% V
6)
, T
= 85°C, Tj ≤ 150°C
a
= 0,
IN
9)
IN to 90% V
, R
OUT
OUT
L
, R
8)
OUT
OUT
= 12 Ω: dV/dton 0.2 -- 1.0 V/µs
= 12 Ω:-dV/dt
L
:
:
;
RON
I
I
ton
t
3.0
L(NOM)
L(GNDhigh)
off
-- -- 2 mA
0.2 -- 1.1 V/µs
off
--
--
--
--
4.3
6.5
--
--
70
140
35
17.5
3.3
4.7
7.3
100
100
mΩ
90
180
45
22.5
--
A
--
--
250
µs
270
6)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
connection. PCB is vertical without blown air. See page 14
7)
Soldering point: upper side of solder edge of device pin 15. See page 14
8)
not subject to production test, specified by design
9)
See timing diagram on page 12.
2
(one layer, 70µm thick) copper area for V
bb
Infineon Technologies AG 5 of 14 2006-Mar-28
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