INFINEON ITS 716G User Manual

PROFET® ITS 716G

Smart High-Side Power Switch For Industrial Applications

Four Channels: 4 x 140mΩ

Status Feedback

Product Summary Package

Operating Voltage V

5.5 ...40V

bb

Operating Temperature Ta -30 …+85°C

Active channels one four parallel On-state Resistance RON Nominal load current I Current limitation I

L(NOM)

L(SCr)

140mΩ 35mΩ

2.6A 5.3A

6.5A 6.5A

General Description

• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and

diagnostic feedback, monolithically integrated in Smart SIPMOS

• Providing embedded protective functions



technology.

PG-DSO-20

Applications

• µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads in industrial

applications

• All types of resistive, inductive and capacitve loads

• Most suitable for loads with high inrush currents, so as lamps

• Replaces electromechanical relays, fuses and discrete circuits

Basic Functions

• Very low standby current

• CMOS compatible input

• Improved electromagnetic compatibility (EMC)

• Fast demagnetization of inductive loads

• Stable behaviour at undervoltage

• Wide operating voltage range

• Logic ground independent from load ground

Protection Functions Block Diagram

• Short circuit protection

• Overload protection

• Current limitation

• Thermal shutdown

• Overvoltage protection (including load dump) with external

resistor

• Reverse battery protection with external resistor

• Loss of ground and loss of V

protection

bb

• Electrostatic discharge protection (ESD)

Diagnostic Function

• Diagnostic feedback with open drain output

• Open load detection in OFF-state

• Feedback of thermal shutdown in ON-state

IN1

ST1/2

IN2

IN3

ST3/4

IN4

Vbb

Logic Channel 1 Channel 2

Logic Channel 3 Channel 4

GND

Load 1

Load 2

Load 3

Load 4

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PROFET® ITS 716G

p

g

Functional diagram

overvoltage

rotection

internal

e supply

volta

IN1

ESD

. channel 1

ST1/2

IN2

GND1/2

IN3

ST3/4

IN4

GND3/4

logic

gate

control

+

charge

pump

temperature

sensor

Open load

detection

control and protection circuit

of

channel 2

control and protection circuit

of

channel 3

control and protection circuit

of

channel 4

current limit

clamp for

inductive load

reverse

battery

protection

VBB

OUT1

LOAD

OUT2

OUT3

OUT4

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PROFET® ITS 716G

Pin Definitions and Functions

Pin Symbol Function

1,10, 11,12, 15,16, 19,20

3 IN1 5 IN2 7 IN3 9 IN4 18 OUT1 17 OUT2 14 OUT3 13 OUT4 4 ST1/2 8 ST3/4 open drain, low on failure 2 GND1/2 6 GND3/4

V

bb

Positive power supply voltage. Design the

wiring for the simultaneous max. short circuit currents from channel 1 to 2 and also for low thermal resistance

Input 1,2,3,4 activates channel 1,2,3,4 in case

of logic high signal

Output 1,2,3,4 protected high-side power output

of channel 1,2,3,4. Design the wiring for the max. short circuit current

Diagnostic feedback 1/2,3/4 of channel 1,2,3,4

Ground of chip 1 (channel 1,2) Ground of chip 2 (channel 3,4)

Pin configuration

(top view)

V

1 • 20 V

bb

GND1/2 2 19 Vbb

IN1 3 18 OUT1

ST1/2 4 17 OUT2

IN2 5 16 Vbb

GND3/4 6 15 Vbb

IN3 7 14 OUT3

ST3/4 8 13 OUT4

IN4 9 12 Vbb Vbb 10 11 Vbb

bb

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PROFET® ITS 716G

Maximum Ratings at T

= 25°C unless otherwise specified

j

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 6) Vbb 43 V Supply voltage for full short circuit protection

T

= -40 ...+150°C

j,start

Vbb 36 V

Load current (Short-circuit current, see page 6) IL self-limited A

3

Load dump protection1) V

2)

R

= 2 Ω, t

I

= 400 ms; IN = low or high,

d

LoadDump

each channel loaded with R

= VA + Vs, VA = 13.5 V

= 13.5 Ω,

L

Junction temperature Operating temperature range Storage temperature range Power dissipation (DC)4) Ta = 25°C: (all channels active)

T

= 85°C:

a

Maximal switchable inductance, single pulse V

= 12V, T

bb

IL = 2.3 A, E IL = 3.3 A, E IL = 4.7 A, E

= 150°C4), see diagrams on page 10

j,start

= 76 mJ, 0 Ω one channel:

AS

= 182 mJ, 0 Ω two parallel channels:

AS

= 460 mJ, 0 Ω four parallel channels:

AS

Electrostatic discharge capability (ESD) IN:

V

Load dump

Tj T

a

T

stg

3.6

P

tot

ZL

V

ESD

)

60 V

1.0 (Human Body Model) ST: out to all other pins shorted: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993

R=1.5kΩ; C=100pF

Input voltage (DC) see internal circuit diagram page 9 VIN -10 ... +16 V Current through input pin (DC) Pulsed current through input pin Current through status pin (DC)

5)

I

IN

I

IN

I

ST

+150

°C

-30 ...+85

-40 ...+105

W

1.9

21

mH 25 30

kV

4.0

8.0

±0.3

mA

±5.0 ±5.0

1)

Supply voltages higher than V

resistor for the GND connection is recommended.

2)

RI = internal resistance of the load dump test pulse generator

3)

V

Load dump

4)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

connection. PCB is vertical without blown air. See page 14

5)

only for testing

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

Infineon Technologies AG 4 of 14 2006-Mar-23

require an external current limit for the GND and status pins (a 150Ω

bb(AZ)

2

(one layer, 70µm thick) copper area for V

bb

PROFET® ITS 716G

Thermal Characteristics

Parameter and Conditions Symbol Values Unit

Thermal resistance junction - soldering point

6)7)

each channel: R junction – ambient6) @ 6 cm2 cooling area one channel active: all channels active:

min typ max

R

thjs

thja

-- -- 17

--

-44 35

--

K/W

Electrical Characteristics

Parameter and Conditions, each of the four channels Symbol Values Unit

at Tj = -40...+150°C, V

Load Switching Capabilities and Characteristics

= 12 V unless otherwise specified

bb

min typ max

On-state resistance (Vbb to OUT); I

= 2 A

L

each channel, Tj = 25°C:

T

= 150°C:

j

two parallel channels, Tj = 25°C: four parallel channels, Tj = 25°C:

see diagram, page 11

Nominal load current one channel active:

two parallel channels active: four parallel channels active:

Device on PCB Output current while GND disconnected or pulled up

V

= 32 V, V

bb

see diagram page 9

Turn-on time Turn-off time IN to 10% V R

= 12 Ω

L

Slew rate on 9) 10 to 30% V Slew rate off 9) 70 to 40% V

6)

, T

= 85°C, Tj ≤ 150°C

a

= 0,

IN

9)

IN to 90% V

, R

OUT

L

, R

8)

OUT

= 12 Ω: dV/dton 0.2 -- 1.0 V/µs

= 12 Ω:-dV/dt

L

: :

;

RON

I

ton t

2.3

L(NOM)

L(GNDhigh)

off

-- -- 2 mA

0.2 -- 1.1 V/µs

off

--

3.3

4.7

--

110 210

55 28

2.6

3.7

5.3

100 100

140

mΩ

280

70 35

--

A

--

250

µs

270

6)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

connection. PCB is vertical without blown air. See page 14

7)

Soldering point: upper side of solder edge of device pin 15. See page 14

8)

not subject to production test, specified by design

9)

See timing diagram on page 12.

2

(one layer, 70µm thick) copper area for V

bb

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INFINEON ITS 716G User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual