Datasheet ITS 640S2 Datasheet (INFINEON)

PROFET

®

ITS 640S2

Smart Sense High-Side Power Switch
For Industrial Applications

Product Summary

Features

•

Short circuit protection

•

Current limitation

•

Proportional load current sense

•

CMOS compatible input

•

Open drain diagnostic output

•

Fast demagnetization of inductive loads

•

Undervoltage and overvoltage shutdown with

auto-restart and hysteresis

•

Overload protection

•

Thermal shutdown

•

Overvoltage protection including load dump

Operating voltage
On-state resistance RON 30
Load current (ISO) I
Current limitation I
Operating temperature T

Package

PG-TO220-7-11 PG-TO220-7-12

(with external GND-resistor)

•

Reverse battery protection (with external GND-

resistor)

•

Loss of ground and loss of V

•

Electrostatic discharge (ESD) protection

protection

bb

11

Standard (staggered) Straight

Application

•

µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads in industrial

applications

•

All types of resistive, inductive and capacitive loads

•

Replaces electromechanical relays, fuses and discrete circuits

V

bb(on)

L(ISO)

L(SCr)

a

5.0 ... 34 V

12.6 A
24 A

-30 … +85 °C

mΩ

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.

Block Diagram

4

+ V

bb

Voltage

source

V

Logic

Voltage

sensor

IN

3

ESD

ST

1

IS

5

I

IS

R

IS

Logic

Overvoltage

protection

Charge pump

Level shifter

Rectifier

GND

Current

limit

unclamped

Temperature

2

Signal GND

Gate

protection

Limit for

ind. loads

Output

Voltage

detection

sensor

Current

Sense

OUT

R

O

GND

PROFET



6, 7

I

L

Load GND

Load

Infineon Technologies AG Page 1 of 15 2006-Mar-28

PROFET

®

ITS 640S2

Pin Symbol Function

1 ST

Diagnostic feedback: open drain, invers to input level

2 GND Logic ground

3 IN Input, activates the power switch in case of logical high signal

4 Vbb Positive power supply voltage, the tab is shorted to this pin

5 IS

Sense current output, proportional to the load current, zero in
the case of current limitation of load current

6 & 7 OUT

(Load, L)

Output, protected high-side power output to the load.
Both output pins have to be connected in parallel for operation
according this spec (e.g. k

ILIS

).

Design the wiring for the max. short circuit current

Maximum Ratings at Tj = 25 °C unless otherwise specified

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 4) Vbb 43 V
Supply voltage for full short circuit protection

T

Load dump protection1) V
R

=-40 ...+150°C

j Start

2)

= 2 Ω, RL= 1 Ω, t

I

LoadDump

= 200 ms, IN= low or high

d

= VA + Vs, VA = 13.5V

Vbb 34 V

3

V

Load dump

)

60 V

Load current (Short circuit current, see page 5) IL self-limited A
Junction temperature

Operating temperature range
Storage temperature range

Power dissipation (DC), T

≤ 25 °C P

C

Inductive load switch-off energy dissipation, single pulse
V

= 12V, T

bb

IL = 12.6 A, Z
IL = 4 A, Z

= 150°C, TC = 150°C const.

j,start

= 4,2 mH, 0 Ω:

L

= 330 mH, 0 Ω:

L

Electrostatic discharge capability (ESD) IN:
(Human Body Model) ST, IS:
out to all other pins shorted:

T

j

T

a

T

stg

85 W

tot

-40 ...+105

+150

-30 ...+85

E

AS

EAS

1.0

V

ESD

0,41

3,5

4.0

8.0

°C

kV

acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993

R=1.5kΩ; C=100pF

Input voltage (DC) VIN -10 ... +16 V
Current through input pin (DC)

Current through status pin (DC)
Current through current sense pin (DC)

see internal circuit diagrams page 7

I

IN

I

ST

IIS

±2.0
±5.0

±14

mA

J

1)

Supply voltages higher than V

resistor in the GND connection is recommended).

2)

RI = internal resistance of the load dump test pulse generator

3)

V

Load dump

is setup without the DUT connected to the generator according to ISO 7637-1 and DIN 40839

require an external current limit for the GND and status pins (a 150 Ω

bb(AZ)

Infineon Technologies AG Page 2 2006-Mar-28

PROFET

®

ITS 640S2

Thermal Characteristics

Parameter and Conditions Symbol Values Unit

min typ max
Thermal resistance chip - case: R

junction - ambient (free air): R

thJC

thJA

-- -- 1.47

-- -- 75

K/W

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C, V

Load Switching Capabilities and Characteristics

On-state resistance (pin 4 to 6&7)
I

= 5 A T

L

Tj=150 °C:

Output voltage drop limitation at small load
currents (pin 4 to 6&7), see page 13

I

= 0.5 A Tj =-40...+150°C:

L

Nominal load current, ISO Norm (pin 4 to 6&7)

VON = 0.5 V, TC = 85 °C

Nominal load current, device on PCB

nicht definiert.)

T

= 85 °C, T

A

Output current (pin 6&7) while GND disconnected

or GND pulled up, V

9; not subject to production test, specified by design

Turn-on time IN to 90% V
Turn-off time IN to 10% V
R

= 12 Ω, T

L

Slew rate on
10 to 30% V

Slew rate off
70 to 40% V

= 12 V unless otherwise specified

bb

≤ 150 °C VON ≤ 0.5 V,

j

=30 V, VIN= 0, see diagram page

bb

=-40...+150°C

j

, R

OUT

OUT

, R

L

L

= 12 Ω, T

= 12 Ω, T

=-40...+150°C

j

=-40...+150°C

j

=25 °C:

j

Fehler! Textmarke

OUT
OUT

:
:

RON

V

I

I

I

t
t

dV /dt

-dV/dt

ON(NL)

L(ISO)

L(NOM)

L(GNDhigh)

on

off

on

off

30
60

mΩ

min typ max

--

27
54

--

50 -- mV

11.4 12.6 -- A

4.0

4.5 -- A

-- -- 8 mA

25
25

70
80

150
200

µs

0.1 -- 1 V/µs

0.1 -- 1 V/µs

Infineon Technologies AG Page 3 2006-Mar-28

PROFET

®

ITS 640S2

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C, V

Operating Parameters

= 12 V unless otherwise specified

bb

min typ max

Operating voltage 4) T
Undervoltage shutdown T
Undervoltage restart Tj =-40...+25°C:

=-40...+150°C: V

j

=-40...+150°C: V

j

bb(on)

bb(under)

V

bb(u rst)

5.0 -- 34 V

3.2 -- 5.0 V

-- 4.5 5.5

Tj =+150°C:
Undervoltage restart of charge pump

see diagram page 12 Tj =-40...+25°C:
Tj =25...150°C:

Undervoltage hysteresis

∆V

bb(under)

Overvoltage shutdown T
Overvoltage restart T
Overvoltage hysteresis T
Overvoltage protection

Ibb=40 mA T

= V

bb(u rst)

- V

bb(under)

5)

Tj =-40°C:

=-40...+150°C: V

j

=-40...+150°C: V

j

=-40...+150°C: ∆V

j

=+25...+150°C

j

Standby current (pin 4)
V

=0 T

IN

T

Off state output current (included in I

,

VIN=0

Operating current (Pin 2)

6)

, VIN=5 V

=-40...+25°C:

j

= 150°C:

j

)

bb(off)

=-40...+150°C

Tj

V

∆V

V

bb(ucp)

bb(under)

34 -- 43 V

bb(over)

33 -- -- V

bb(o rst)

-- 1 -- V

bb(over)

41

bb(AZ)

I

bb(off)

I

-- -- 10 µA

L(off)

:

I

-- 1.2 3 mA

GND

--

--

4.7

--

-- 0.5 -- V

--

43

--

--

47

4

12

6.0

6.5

7.0

--

52

15
25

V

V

V

µA

4)

At supply voltage increase up to V

5)

Supply voltages higher than V
resistor in the GND connection is recommended). See also V
circuit diagram page 8.

6)

Add I

, if IST > 0, add IIN, if VIN>5.5 V

ST

= 4.7 V typ without charge pump, V

bb

require an external current limit for the GND and status pins (a 150 Ω

bb(AZ)

in table of protection functions and

ON(CL)

OUT

≈V

- 2 V

bb

Infineon Technologies AG Page 4 2006-Mar-28

PROFET

®

ITS 640S2

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C, V

= 12 V unless otherwise specified

bb

min typ max

Protection Functions7)

Initial peak short circuit current limit (pin 4 to 6&7) I

=-40°C:

Tj

=25°C:

Tj

=+150°C:

Tj

Repetitive short circuit shutdown current limit I

Tj = T

(see timing diagrams, page 11) -- 24 -- A

jt

Output clamp (inductive load switch off)

at V
T

OUT

= Vbb - V

ON(CL)

; IL= 40 mA, T

=+25..+150°C:

j

=-40°C:

j

48

V

L(SCp)

56
40
31

L(SCr)

ON(CL)

41
43

50

37

--

47

65
58
45

--

52

A

V

Thermal overload trip temperature Tjt 150 -- -- °C
Thermal hysteresis

∆

Tjt -- 10 -- K

Reverse battery (pin 4 to 2) 8) -Vbb -- -- 32 V
Reverse battery voltage drop (V

I

= -5 A T

L

Diagnostic Characteristics

Current sense ratio9), static on-condition,

VIS = 0...5 V, V
k

= IL / I

ILIS

Tj= 25...+150°C, IL= 5 A:

bb(on)

Tj = -40°C, IL = 5 A:

IS

= 6.5

10)

...27V,

, Tj= 25...+150°C, IL = 0.5 A:

Current sense output voltage limitation

Tj = -40 ...+150°C IIS = 0, IL = 5 A:

Current sense leakage/offset current

Tj = -40 ...+150°C V

V
V

=5 V, VIS = 0, V

IN

IN

> Vbb)

out

=150 °C: -V

j

Tj= -40°C, IL= 0.5 A:

=0, VIS = 0, IL = 0:

IN

=5 V, VIS = 0, IL = 0:

= 0 (short circuit):

OUT

ON(rev)

-- 600 -- mV

k

ILIS

V

IS(lim)

I

IS(LL)

I

0 -- 15

IS(LH)

11 )

I

IS(SH)

0 -- 10

4550

5000 6000

3300 5000 8000

4550
4000

5.4

0

5000
5000

5550
6500

6.1 6.9 V

-- 1

µA

7)

Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are
not designed for continuous repetitive operation.

8)

Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source

diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 8).

9)

This range for the current sense ratio refers to all devices. The accuracy of the k

a factor of two by matching the value of k
In the case of current limitation the sense current I

High. See figure 2b, page 10.

10)

Valid if V

11)

not subject to production test, specified by design

was exceeded before.

bb(u rst)

can be raised at least by

for every single device.

ILIS

is zero and the diagnostic feedback potential VST is

IS

ILIS

Infineon Technologies AG Page 5 2006-Mar-28

PROFET

®

ITS 640S2

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C, V

Current sense settling time to I

positive input slope

Tj= -40...+150°C

Current sense settling time to 10% of IIS static after

negative input slope

Tj= -40...+150°C

Current sense rise time (60% to 90%) after change

of load current

Open load detection voltage

Tj=-40..150°C:

Internal output pull down

(pin 6 to 2), V

Input and Status Feedback

Input resistance

see circuit page 7
Input turn-on threshold voltage T
Input turn-off threshold voltage T

Input threshold hysteresis ∆ V

Off state input current (pin 3), V

Tj =-40..+150°C

On state input current (pin 3), V

Tj =-40..+150°C

Delay time for status with open load

after Input neg. slope (see diagram page 12)

Status delay after positive input slope

T

Status delay after negative input slope

T

= 12 V unless otherwise specified

bb

±10% after

= 0.4 V

= 5 V

12)

, I

13)

13)

, I

= 2.5 5 A

L

=5 V, Tj=-40..150°C

OUT

IS static

= 0 5 A,

L

, I

= 5 0 A ,

L

13)

(off-condition)

14)

IN

IN

13)

=-40 ... +150°C:

j

13)

=-40 ... +150°C:

j

=-40..+150°C: V

j

=-40..+150°C: V

j

t

son(IS)

t

soff(IS)

t

slc(IS)

V

OUT(OL)

RO

min typ max

--

--

--

-- 300

30 100

10 --

2 3 4V

5

15 40 kΩ

µs

µs

µs

R

3,0 4,5 7,0 kΩ

I

-- -- 3.5 V

IN(T+)

1.5 -- -- V

IN(T-)

-- 0.5 -- V

IN(T)

I

IN(off)

I

IN(on)

t

d(ST OL3)

t

don(ST)

t

doff(ST)

1

20

--

--

--

-- 50 µA

50 90 µA

400 -- µs

13 --

1 --

µs
µs

Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA:
ST low voltage Tj =-40...+25°C, IST = +1.6 mA:

T

Status leakage current, V

= +150°C, IST = +1.6 mA:

j

= 5 V, Tj=25 ... +150°C: I

ST

V

ST(high)

V

ST(low)

ST(high)

5.4

--

--

6.1

--

--

6.9

0.4

0.7

V

-- -- 2 µA

12)

not subject to production test, specified by design

13)

External pull up resistor required for open load detection in off state.

14)

If a ground resistor R

is used, add the voltage drop across this resistor.

GND

Infineon Technologies AG Page 6 2006-Mar-28

PROFET

®

ITS 640S2

Truth Table

Normal
operation
Current­limitation
Short circuit to
GND

Over­temperature
Short circuit to
V

bb

Open load L

Undervoltage L H L

Overvoltage L H L

Negative output
voltage clamp

L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 11...12)

Input Output Status

level

level level I

L
H
L
H
L
H

L
H
L
H

H

L

H

L

H

L

15

)

L

L

L
H
H

18

)

L

H (L

H

L

L

Current

H
L
H
H
H
H

H
H

16)

L

L

19)

)
L
H
L
H
L

Sense

IS
0

nominal

0
0
0
0

0
0
0

<nominal

0
0

0
0
0
0

17)

L L H 0

Terms

I

PROFET

GND

4

V

GND

2

bb

bb

OUT

OUT

I

GND

I

6

7

V

bb

I

IN

3

IN

I

ST

ST

1

I

IS

V

V

ST

IN

IS

5

V

IS

R

15)

The voltage drop over the power transistor is

V

ON

L

V

OUT

V

Input circuit (ESD protection)

R

IN

I

ESD-ZD

I

GND

I

I

The use of ESD zener diodes as voltage clamp at DC
conditions is not recommended.

bb-VOUT

>typ.3V. Under this condition the sense current IIS is

zero

16)

An external short of output to Vbb, in the off state, causes an internal current from output to ground. If R
is used, an offset voltage at the GND and ST pins will occur and the V

17)

Low ohmic short to

18)

Power Transistor off, high impedance

19)

with external resistor between pin 4 and pin 6&7

V

may reduce the output current IL and therefore also the sense current IIS.

bb

signal may be errorious.

ST low

GND

Infineon Technologies AG Page 7 2006-Mar-28

PROFET

®

ITS 640S2

Status output

R

ST(ON)

GND

ESD-Zener diode: 6.1 V typ., max 5 mA;
R

ST(ON)

diodes as voltage clamp at DC conditions is not
recommended.

Current sense output

< 440 Ω at 1.6 mA, The use of ESD zener

I

IS

ESD-ZD

GND

ESD-Zener diode: 6.1 V typ., max 14 mA;

= 1 kΩ nominal

R

IS

Inductive and overvoltage output clamp

V

Z

PROFET

V

clamped to 47 V typ.

ON

GND

ESD-

ZD

IS

ST

+5V

R

IS

V

+ V

V

OUT

IS

bb

ON

Overvoltage protection of logic part

V
R

+ 5V

R

ST

R

V

R

IS

= 6.1 V typ., VZ2 = 47 V typ., R

Z1

= 150 Ω, RST= 15 kΩ, RIS= 1 kΩ, RV= 15 kΩ,

GND

R

I

IN

ST

IS

V

Z1

Logic

V

R

GND

Signal GND

= 4 kΩ typ,

I

Z2

GND

Reverse battery protection

+ 5V

R

ST

R

I

Logic

V

Signal GND

Z1

Power
Inverse
Diode

GND

R

GND

Power GND

R

V

R

IS

The load R

IN

ST

IS

is inverse on, temperature protection is

L

not active

R

= 150 Ω, RI= 4 kΩ typ, RST≥ 500 Ω, RIS≥ 200 Ω,

GND

R

≥ 500 Ω,

V

Open-load detection

OFF-state diagnostic condition: V

> 3 V typ.; IN low

OUT

V

R

-

OUT

bb

+ V

bb

V

bb

L

R

EXT

OFF

V

ST

Logic

R

O

Signal GND

Out

OUT

Infineon Technologies AG Page 8 2006-Mar-28

PROFET

®

ITS 640S2

GND disconnect

I

PROFET

PROFET

GND

- V

IN

bb

4

V

bb

GND

2

V

GND

4

V

bb

2

V

GND

device stays off

IN(T+)

OUT

OUT

OUT

OUT

OUT

6

7

6

7

≈ V

- V

IN

V

bb

3

IN

1

ST

5

IS

V

V

V

IN

ST

IS

Any kind of load. In case of Input=high is V
Due to V

GND disconnect with GND pull up

Any kind of load. If V
Due to V

>0, no VST = low signal available.

GND

3

IN

1

ST

5

IS

V

V

V

ST

IN

GND

IS

> V

V

bb

>0, no VST = low signal available.

GND

IN(T+)

Vbb disconnect with charged external
inductive load

4

high

3

IN

1

ST

5

IS

.

V

bb

V

bb

PROFET

GND

2

OUT

OUT

6

7

R

L

D

L

If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.

Inductive Load switch-off energy
dissipation

E

bb

E

OUT

OUT

AS

6

7

E

E

E

Load

L

R

4

V

3

IN

1

ST

=

V

bb

5

IS

bb

PROFET

GND

2

Vbb disconnect with energized inductive
load

4

high

3

IN

1

ST

5

IS

V

bb

Normal load current can be handled by the PROFET
itself.

V

bb

PROFET

GND

2

OUT

OUT

6

7

Energy stored in load inductance:

L

L

2

1

E

/

=

·L·I

2

While demagnetizing load inductance, the energy
dissipated in PROFET is

= Ebb + EL - ER= ∫ V

E

AS

with an approximate solution for R

· L

I

L

=

·(V

E

AS

2

·R

+ |V

bb

OUT(CL)

L

|)· ln (1+

ON(CL)·iL

L

> 0 Ω:

|V

(t) dt,

I

L·RL

OUT(CL)

|

)

Infineon Technologies AG Page 9 2006-Mar-28

PROFET

®

ITS 640S2

Timing diagrams

Figure 1a: Switching a resistive load,

change of load current in on-condition:

IN

ST

V

OUT

I

L

I

IS

The sense signal is not valid during settling time after turn or
change of load current.

t

don(ST)

t

on

tt

Load 1

t

son(IS)

Load 2

t

doff(ST)

t

soff(IS)

t

off

slc(IS)slc(IS)

Figure 2a: Switching a lamp

IN

ST

V

OUT

I

L

I

IS

t

t

Figure 1b: Vbb turn on:

IN

V

bb

I

L

I

IS

ST

proper turn on under all conditions

Figure 2b: Switching a lamp with current limit:

IN

ST

V

OUT

I

L

I

IS

t

t

Infineon Technologies AG Page 10 2006-Mar-28

PROFET

®

ITS 640S2

Figure 2c: Switching an inductive load:

IN

ST

V

OUT

I

L

I

IS

Figure 4a: Overtemperature:
Reset if T

<Tjt

j

IN

ST

I

L

I

IS

T

J

t

t

Figure 3a: Short circuit:
shut down by overtempertature, reset by cooling

IN

I

L

I

IS

I

L(SCp)

I

L(SCr)

ST

Figure 5a: Open load: detection in ON-state,
open load occurs in on-state

IN

ST

V

OUT

I

L

opennormal

t

normal

Heating up may require several milliseconds, depending on
external conditions

= 50 A typ. increases with decreasing temperature.

I

L(SCp)

I

IS

t

Infineon Technologies AG Page 11 2006-Mar-28

PROFET

®

ITS 640S2

Figure 5b: Open load: detection in ON- and OFF-state

(with R

), turn on/off to open load

EXT

IN

t

d(ST OL3)

ST

V

OUT

I

L

open load

I

IS

t

Figure 6a: Undervoltage:

Figure 6b: Undervoltage restart of charge pump

V

on

off-state

V

bb(under)

charge pump starts at V

V

bb(u rst)

V

bb(u cp)

bb(ucp)

V

on-state

V

=4.7 V typ.

V

bb(over)

bb(o rst)

Figure 7a: Overvoltage:

ON(CL)

off-state

V

bb

IN

IN

ST

ST

V

I

I

L

IS

bb

V

bb(under)

not defined

V

bb(u cp)

V

bb(u rst)

V

bb

I

L

I

IS

V

ON(CL)

t

V

bb(over)

V

bb(o rst)

t

Infineon Technologies AG Page 12 2006-Mar-28

PROFET

®

ITS 640S2

Figure 8a: Current sense versus load current:

1.3

[mA] I

1.2

IS

1.1

1

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

0123456

[A]

Figure 9a: Output voltage drop versus load current:

V

[V]

ON

0.2
R

ON

0.1

V

ON(NL)

I

I

L

0.0

012345678

L

[A]

Figure 8b: Current sense ratio

15000

k

ILIS

10000

5000

0

012345678910111213

20

:

[A]

I

L

20

This range for the current sense ratio refers to all

devices. The accuracy of the k

can be raised at

ILIS

least by a factor of two by matching the value of

k

for every single device.

ILIS

Infineon Technologies AG Page 13 2006-Mar-28

PROFET

®

ITS 640S2

Package and Ordering Code

All dimensions in mm

Standard (=staggered): PG-TO220-7-11

Sales code ITS640S2

Ordering code SP000221217

±0.2

10

9.8

8.5

3.7

1)

±0.3

±0.3

13.4

17

15.65

C

0...0.15

1.27

1)

Typical
All metal surfaces tin plated, except area of cut.

Straight: PG-TO220-7-12

Sales Code ITS640S2 S

Ordering code SP000221225

10

9.8

8.5

3.7

±0.15

1)

-0.15

±0.2
±0.15

1)

-0.15

A

±0.2

2.8

±0.3

8.6

7x

0.6±0.1

A

±0.3

10.2

4.4

±0.11.27

0.05

±0.3

3.7

2.4

M

A0.25

C

±0.2

9.25

0.5±0.1

±0.48.4

B

4.4

±0.1

1.27

Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2006
All Rights Reserved.

Attention please!

The information herein is given to describe certain components and
shall not be considered as a guarantee of characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited
to warranties of non-infringement, regarding circuits, descriptions
and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions
and prices please contact your nearest Infineon Technologies Office
in Germany or our Infineon Technologies Representatives worldwide
(see address list).

±0.43.9

Warnings

Due to technical requirements components may contain dangerous
substances. For information on the types in question please contact
your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support
devices or systems with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system,
or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the
human body, or to support and/or maintain and sustain and/or
protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.

1)

±0.3

13.4

17±0.3

15.65

C

0...0.15

1.27

1)

Typical
All metal surfaces tin plated, except area of cut.

7x

0.6

±0.2

2.8

±0.511

±0.1

13±0.5

0.05

2.4

M

BA0.25

C

0.5

±0.2

9.25

±0.1

Infineon Technologies AG Page 14 2006-Mar-28