INFINEON ITS 640S2 User Manual

PROFET

®

ITS 640S2

Smart Sense High-Side Power Switch For Industrial Applications

Product Summary

Features

•

Short circuit protection

•

Current limitation

•

Proportional load current sense

•

CMOS compatible input

•

Open drain diagnostic output

•

Fast demagnetization of inductive loads

•

Undervoltage and overvoltage shutdown with

auto-restart and hysteresis

•

Overload protection

•

Thermal shutdown

•

Overvoltage protection including load dump

Operating voltage On-state resistance RON 30 Load current (ISO) I Current limitation I Operating temperature T

Package

PG-TO220-7-11 PG-TO220-7-12

(with external GND-resistor)

•

Reverse battery protection (with external GND-

resistor)

•

Loss of ground and loss of V

•

Electrostatic discharge (ESD) protection

protection

bb

11

Standard (staggered) Straight

Application

•

µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads in industrial

applications

•

All types of resistive, inductive and capacitive loads

•

Replaces electromechanical relays, fuses and discrete circuits

V

bb(on)

L(ISO)

L(SCr)

a

5.0 ... 34 V

12.6 A 24 A

-30 … +85 °C

mΩ

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.

Block Diagram

4

+ V

bb

Voltage

source

V

Logic

Voltage

sensor

IN

3

ESD

ST

1

IS

5

I

IS

R

IS

Logic

Overvoltage

protection

Charge pump

Level shifter

Rectifier

GND

Current

limit

unclamped

Temperature

2

Signal GND

Gate

protection

Limit for

ind. loads

Output

Voltage

detection

sensor

Current

Sense

OUT

R

O

GND

PROFET



6, 7

I

L

Load GND

Load

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PROFET

®

ITS 640S2

Pin Symbol Function

1 ST

Diagnostic feedback: open drain, invers to input level

2 GND Logic ground

3 IN Input, activates the power switch in case of logical high signal

4 Vbb Positive power supply voltage, the tab is shorted to this pin

5 IS

Sense current output, proportional to the load current, zero in the case of current limitation of load current

6 & 7 OUT

(Load, L)

Output, protected high-side power output to the load. Both output pins have to be connected in parallel for operation according this spec (e.g. k

ILIS

).

Design the wiring for the max. short circuit current

Maximum Ratings at Tj = 25 °C unless otherwise specified

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 4) Vbb 43 V Supply voltage for full short circuit protection

T

Load dump protection1) V R

=-40 ...+150°C

j Start

2)

= 2 Ω, RL= 1 Ω, t

I

LoadDump

= 200 ms, IN= low or high

d

= VA + Vs, VA = 13.5V

Vbb 34 V

3

V

Load dump

)

60 V

Load current (Short circuit current, see page 5) IL self-limited A Junction temperature

Operating temperature range Storage temperature range

Power dissipation (DC), T

≤ 25 °C P

C

Inductive load switch-off energy dissipation, single pulse V

= 12V, T

bb

IL = 12.6 A, Z IL = 4 A, Z

= 150°C, TC = 150°C const.

j,start

= 4,2 mH, 0 Ω:

L

= 330 mH, 0 Ω:

L

Electrostatic discharge capability (ESD) IN: (Human Body Model) ST, IS: out to all other pins shorted:

T

j

T

a

T

stg

85 W

tot

-40 ...+105

+150

-30 ...+85

E

AS

EAS

1.0

V

ESD

0,41

3,5

4.0

8.0

°C

kV

acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993

R=1.5kΩ; C=100pF

Input voltage (DC) VIN -10 ... +16 V Current through input pin (DC)

Current through status pin (DC) Current through current sense pin (DC)

see internal circuit diagrams page 7

I

IN

I

ST

IIS

±2.0 ±5.0

±14

mA

J

1)

Supply voltages higher than V

resistor in the GND connection is recommended).

2)

RI = internal resistance of the load dump test pulse generator

3)

V

Load dump

is setup without the DUT connected to the generator according to ISO 7637-1 and DIN 40839

require an external current limit for the GND and status pins (a 150 Ω

bb(AZ)

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PROFET

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ITS 640S2

Thermal Characteristics

Parameter and Conditions Symbol Values Unit

min typ max Thermal resistance chip - case: R

junction - ambient (free air): R

thJC

thJA

-- -- 1.47

-- -- 75

K/W

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C, V

Load Switching Capabilities and Characteristics

On-state resistance (pin 4 to 6&7) I

= 5 A T

L

Tj=150 °C:

Output voltage drop limitation at small load currents (pin 4 to 6&7), see page 13

I

= 0.5 A Tj =-40...+150°C:

L

Nominal load current, ISO Norm (pin 4 to 6&7)

VON = 0.5 V, TC = 85 °C

Nominal load current, device on PCB

nicht definiert.)

T

= 85 °C, T

A

Output current (pin 6&7) while GND disconnected

or GND pulled up, V

9; not subject to production test, specified by design

Turn-on time IN to 90% V Turn-off time IN to 10% V R

= 12 Ω, T

L

Slew rate on 10 to 30% V

Slew rate off 70 to 40% V

= 12 V unless otherwise specified

bb

≤ 150 °C VON ≤ 0.5 V,

j

=30 V, VIN= 0, see diagram page

bb

=-40...+150°C

j

, R

OUT

, R

L

= 12 Ω, T

=-40...+150°C

j

=-40...+150°C

j

=25 °C:

j

Fehler! Textmarke

OUT OUT

: :

RON

V

I

t t

dV /dt

-dV/dt

ON(NL)

L(ISO)

L(NOM)

L(GNDhigh)

on

off

on

off

30 60

mΩ

min typ max

--

27 54

--

50 -- mV

11.4 12.6 -- A

4.0

4.5 -- A

-- -- 8 mA

25 25

70 80

150 200

µs

0.1 -- 1 V/µs

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PROFET

®

ITS 640S2

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C, V

Operating Parameters

= 12 V unless otherwise specified

bb

min typ max

Operating voltage 4) T Undervoltage shutdown T Undervoltage restart Tj =-40...+25°C:

=-40...+150°C: V

j

=-40...+150°C: V

j

bb(on)

bb(under)

V

bb(u rst)

5.0 -- 34 V

3.2 -- 5.0 V

-- 4.5 5.5

Tj =+150°C: Undervoltage restart of charge pump

see diagram page 12 Tj =-40...+25°C: Tj =25...150°C:

Undervoltage hysteresis

∆V

bb(under)

Overvoltage shutdown T Overvoltage restart T Overvoltage hysteresis T Overvoltage protection

Ibb=40 mA T

= V

bb(u rst)

- V

bb(under)

5)

Tj =-40°C:

=-40...+150°C: V

j

=-40...+150°C: V

j

=-40...+150°C: ∆V

j

=+25...+150°C

j

Standby current (pin 4) V

=0 T

IN

T

Off state output current (included in I

,

VIN=0

Operating current (Pin 2)

6)

, VIN=5 V

=-40...+25°C:

j

= 150°C:

j

)

bb(off)

=-40...+150°C

Tj

V

∆V

V

bb(ucp)

bb(under)

34 -- 43 V

bb(over)

33 -- -- V

bb(o rst)

-- 1 -- V

bb(over)

41

bb(AZ)

I

bb(off)

I

-- -- 10 µA

L(off)

:

I

-- 1.2 3 mA

GND

--

4.7

--

-- 0.5 -- V

--

43

--

47

4

12

6.0

6.5

7.0

--

52

15 25

V

µA

4)

At supply voltage increase up to V

5)

Supply voltages higher than V resistor in the GND connection is recommended). See also V circuit diagram page 8.

6)

Add I

, if IST > 0, add IIN, if VIN>5.5 V

ST

= 4.7 V typ without charge pump, V

bb

require an external current limit for the GND and status pins (a 150 Ω

bb(AZ)

in table of protection functions and

ON(CL)

OUT

≈V

- 2 V

bb

Infineon Technologies AG Page 4 2006-Mar-28

PROFET

®

ITS 640S2

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C, V

= 12 V unless otherwise specified

bb

min typ max

Protection Functions7)

Initial peak short circuit current limit (pin 4 to 6&7) I

=-40°C:

Tj

=25°C:

Tj

=+150°C:

Tj

Repetitive short circuit shutdown current limit I

Tj = T

(see timing diagrams, page 11) -- 24 -- A

jt

Output clamp (inductive load switch off)

at V T

OUT

= Vbb - V

ON(CL)

; IL= 40 mA, T

=+25..+150°C:

j

=-40°C:

j

48

V

L(SCp)

56 40 31

L(SCr)

ON(CL)

41 43

50

37

--

47

65 58 45

--

52

A

V

Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis

∆

Tjt -- 10 -- K

Reverse battery (pin 4 to 2) 8) -Vbb -- -- 32 V Reverse battery voltage drop (V

I

= -5 A T

L

Diagnostic Characteristics

Current sense ratio9), static on-condition,

VIS = 0...5 V, V k

= IL / I

ILIS

Tj= 25...+150°C, IL= 5 A:

bb(on)

Tj = -40°C, IL = 5 A:

IS

= 6.5

10)

...27V,

, Tj= 25...+150°C, IL = 0.5 A:

Current sense output voltage limitation

Tj = -40 ...+150°C IIS = 0, IL = 5 A:

Current sense leakage/offset current

Tj = -40 ...+150°C V

V V

=5 V, VIS = 0, V

IN

> Vbb)

out

=150 °C: -V

j

Tj= -40°C, IL= 0.5 A:

=0, VIS = 0, IL = 0:

IN

=5 V, VIS = 0, IL = 0:

= 0 (short circuit):

OUT

ON(rev)

-- 600 -- mV

k

ILIS

V

IS(lim)

I

IS(LL)

I

0 -- 15

IS(LH)

11 )

I

IS(SH)

0 -- 10

4550

5000 6000

3300 5000 8000

4550 4000

5.4

0

5000 5000

5550 6500

6.1 6.9 V

-- 1

µA

7)

Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation.

8)

Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source

diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 8).

9)

This range for the current sense ratio refers to all devices. The accuracy of the k

a factor of two by matching the value of k In the case of current limitation the sense current I

High. See figure 2b, page 10.

10)

Valid if V

11)

not subject to production test, specified by design

was exceeded before.

bb(u rst)

can be raised at least by

for every single device.

ILIS

is zero and the diagnostic feedback potential VST is

IS

ILIS

Infineon Technologies AG Page 5 2006-Mar-28