Datasheet ITS436L2 Datasheet (INFINEON)

PROFET

®

ITS436L2

Smart High-Side Power Switch
for Industrial Applications

One Channel: 38mΩ

Status Feedback

Product Summary Package

On-state Resistance R

Operating Voltage V

Nominal load current I

Current limitation I

Operating Temperature T

ON

bb(on)

L(NOM)

L(SCr)

a

38mΩ

4.75...41V

9.8A

40A

-30 …+85°C

General Description

• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and

diagnostic feedback, monolithically integrated in Smart SIPMOS

• Providing embedded protective functions

PG-TO220-5-11 PG-TO220-5-12

Standard Straight



technology.

Applications

• µC compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads in

industrial applications

• All types of resistive, inductive and capacitve loads

• Most suitable for loads with high inrush currents, so as lamps

• Replaces electromechanical relays, fuses and discrete circuits

Basic Functions

• Very low standby current

• CMOS compatible input

• Fast demagnetization of inductive loads

• Stable behaviour at undervoltage

• Wide operating voltage range

• Logic ground independent from load ground

Block Diagram

Protection Functions

• Short circuit protection

• Overload protection

• Current limitation

• Thermal shutdown

• Overvoltage protection (including load dump) with external

resistor

• Reverse battery protection with external resistor

• Loss of ground and loss of V

protection

bb

• Electrostatic discharge protection (ESD)

IN

ST

Vbb

Logic

with

protection

functions

OUT

Diagnostic Function

• Diagnostic feedback with open drain output

• Open load detection in ON-state

PROFET

GND

Load

• Feedback of thermal shutdown in ON-state

Infineon Technologies AG Page 1 2006-Mar-28

B

p

g

PROFET

Functional diagram

IN

ST

GND

overvoltage

rotection

internal

e supply

volta

ESD

logic

gate

control

+

charge

pump

temperature

sensor

Open load

detection

current limit

clamp for

inductive load

®

PROFET

ITS436L2

VBB

OUT

LOAD

Pin Definitions and Functions

Pin

Symbol Function

1

2 IN

3 Vbb

4 ST

GND

Input, activates the power switch in

Positive power supply voltage

The tab is shorted to pin 3

Diagnostic feedback, low on failure

5 OUT

Tab Vbb

Positive power supply voltage

The tab is shorted to pin 3

Logic ground

case of logical high signal

Output to the load

Pin configuration

(top view)

Tab = V

B

1 2 (3) 4 5

GND IN ST OUT

Infineon Technologies AG Page 2 2006-Mar-28

PROFET

®

ITS436L2

Maximum Ratings at Tj = 25 °C unless otherwise specified

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 4) Vbb 43 V
Supply voltage for full short circuit protection

T

=-40 ...+150°C

j Start

Load dump protection

2

)

R

= 2 Ω, RL= 4.0 Ω, t

I

1

)

V

LoadDump

= 200 ms, IN= low or high

d

= VA + Vs, VA = 13.5 V

Load current (Current limit, see page 5) IL self-limited A
Junction temperature
Operating temperature range
Storage temperature range
Power dissipation (DC), T

≤ 25 °C P

C

Maximal switchable inductance, single pulse

V

= 12V, T

bb

(See diagram on page 8) I

= 150°C, TC = 150°C const.

j,start

L(ISO)

= 9.8 A, R

= 0 Ω, E

L

4

)

AS

=0.33J:

Electrostatic discharge capability (ESD) IN:
(Human Body Model) ST:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and

ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF

Input voltage (DC) VIN -10 ... +16 V
Current through input pin (DC)
Current through status pin (DC)

see internal circuit diagrams page 7

Vbb 24 V

V

Load dump

Tj
T

a

T

stg

75 W

tot

3

60 V

+150

-30 … +85

-40 ...+105

°C

ZL 5.0 mH

V

1.0

ESD

kV

4.0

8.0

IIN
IST

±2.0
±5.0

mA

Thermal Characteristics

Parameter and Conditions Symbol Values Unit

min typ max

75

K/W

--

bb

Thermal resistance chip - case:

junction - ambient (free air):
device on pcb

1

)

Supply voltages higher than V

resistor for the GND connection is recommended).

2

)

RI = internal resistance of the load dump test pulse generator

3

)

V

Load dump

4

)

EAS is the maximum inductive switch-off energy

5

)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

connection. PCB is vertical without blown air.

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

require an external current limit for the GND and status pins (a 150Ω

bb(AZ)

5

)

R

thJC

R

thJA

:

2

(one layer, 70µm thick) copper area for V

--

--

--

--

--

33

1.75

Infineon Technologies AG Page 3 2006-Mar-28

PROFET

®

ITS436L2

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

at Tj =-40...+150°C, V

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to 5)

IL = 2 A; V

≥ 7V T

BB

Tj=150 °C:

see diagram, page 9

Nominal load current, (pin 3 to 5)

ISO 10483-1, 6.7:VON=0.5V, TC=85°C

Output current (pin 5) while GND disconnected or

GND pulled up

see diagram page 7

Turn-on time IN to 90% V
Turn-off time IN to 10% V
R

= 12 Ω,

L

Slew rate on
10 to 30% V

OUT

Slew rate off
70 to 40% V

OUT

= 12 V unless otherwise specified

bb

6

)

, Vbb=30 V, VIN= 0,

, R

= 12 Ω,

L

, R

= 12 Ω,

L

=25 °C:

j

OUT

OUT

RON

min typ max

--

35

64

I

L(ISO)

I

L(GNDhigh)

:

ton

:

t

off

dV /dt

-dV/dt

-- -- 2 mA

0.1 -- 1 V/µs

on

0.1 -- 1 V/µs

off

8.8

50
50

9.8 -- A

100
120

38

72

200
250

mΩ

µs

Operating Parameters

Operating voltage Tj =-40
Tj =+25...+150°C:

7

Overvoltage protection

)

Tj =-40°C:

Ibb=40 mA Tj =25...+150°C:
Standby current (pin 3)

VIN=0; see diagram on page 9 T

Off-State output current (included in I

VIN=0

Operating current

8)

T

9

)

, VIN=5 V

=-40...+25°C:

j

= 150°C:

j

)

bb(off)

6

)

not subject to production test, specified by design

7

)

Supply voltages higher than V
resistor for the GND connection is recommended. See also V
circuit diagram page 7.

8

)

Measured with load

9

)

Add I

, if IST > 0, add IIN, if VIN>5.5 V

ST

require an external current limit for the GND and status pins (a 150Ω

bb(AZ)

V

4.75 --

bb(on)

--

V

I

I

I

41

bb(AZ)

43

--

bb(off)

--

-- 1 10 µA

L(off)

-- 0.8 1.4 mA

GND

in table of protection functions and

ON(CL)

--

47

5

--

41
43

52

25

V

--

8

V

µA

Infineon Technologies AG Page 4 2006-Mar-28

PROFET

®

ITS436L2

Parameter and Conditions Symbol Values Unit

at Tj =-40...+150°C, V

Protection Functions

Current limit (pin 3 to 5) I

(see timing diagrams on page 11) T

Tj =25°C:
Tj =+150°C:

Repetitive short circuit shutdown current limit I

= 12 V unless otherwise specified

bb

10)

=-40°C:

j

L(lim)

46

L(SCr)

min typ max

58
39
30

51

38

68
58
46

A

Tj = Tjt (see timing diagrams, page 11) -- 40 -- A

Thermal shutdown time

(see timing diagrams on page 11)

Output clamp (inductive load switch off)
at V

= Vbb - V

OUT

ON(CL)

11)

T

j,start

I

= 25°C:

= 40 mA: V

L

t

off(SC)

ON(CL)

-- 1.9 -- ms

41
43

47 52 V

Thermal overload trip temperature Tjt 150 -- -- °C
Thermal hysteresis
Reverse battery (pin 3 to 1)
Reverse battery voltage drop (V

12)

-Vbb -- -- 32 V

13 )

)

> V

out

bb

IL = -2 A Tj=150 °C: -V

Diagnostic Characteristics

Open load detection current

∆

Tjt -- 10 -- K

ON(rev)

-- 600 -- mV

I

100 -- 900 mA

L (OL)

(on-condition)

Input and Status Feedback

Input resistance

see circuit page 7
Input turn-on threshold voltage V
Input turn-off threshold voltage V

Input threshold hysteresis ∆ V

Off state input current (pin 2), VIN = 0.4 V I
On state input current (pin 2), VIN = 5 V I
Delay time for status with open load after switch off

(see timing diagrams on page 11)

14

)

R

2.5 3.5 6 kΩ

I

1.7 -- 3.2 V

IN(T+)

1.5 -- -- V

IN(T-)

-- 0.5 -- V

IN(T)

1 -- 50 µA

IN(off)

20 50 90 µA

IN(on)

t

d(ST OL4)

100 520 900 µs

Status output (open drain)
Zener limit voltage I
ST low voltage IST = +1.6 mA:

10

)

Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are
not designed for continuous repetitive operation.

11

)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

connection. PCB is vertical without blown air.

12

)

Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source

diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 3 and circuit page 7).

13

)

not subject to production test, specified by design

14

)

If a ground resistor R

is used, add the voltage drop across this resistor.

GND

= +1.6 mA:

ST

V
V

2

(one layer, 70µm thick) copper area for V

ST(high)

ST(low)

5.4

--

6.1

--

0.4

--

V

bb

Infineon Technologies AG Page 5 2006-Mar-28

PROFET

®

ITS436L2

Truth Table

Input Output Status

Normal
operation
Open load L

Overtem­perature

L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 11)

level

level BTS 436L2

L
H

H
L
H

L
H
Z
H
L
L

H
H
H
L
H
L

Infineon Technologies AG Page 6 2006-Mar-28

PROFET

Terms

I

bb

R

I

3

PROFET

GND

1

GND

V

bb

I

GND

I

I

V

L

OUT

5

V

I

I

IN

IN

2

I

ST

ST

V

IN

V

bb

Input circuit (ESD protection)

4

V

ST

R

IN

I

ESD-ZD

GND

The use of ESD zener diodes as voltage clamp at DC
conditions is not recommended

Status output

R

ST(ON)

+5V

ST

ON

OUT

®

ITS436L2

Overvolt. and reverse batt. protection

+ 5V

R

ST

R

I

IN

Logic

ST

R

ST

V

Z1

V

= 6.1 V typ., VZ2 = 47 V typ., R

Z1

R

= 15 kΩ, RI= 3.5 kΩ typ.

ST

R

Signal GND

GND

V

Z2

PRO FET

GND

GND

OUT

Load GND

= 150 Ω,

In case of reverse battery the load current has to be
limited by the load. Temperature protection is not
active

Open-load detection in on-state

Open load, if V

Logic

unit

ON

ON

< R

ON·IL(OL)

Open load

detection

; IN high

+ V

R

OUT

bb

V

+ V

Load

ON

bb

ESD-

GND

ZD

ESD-Zener diode: 6.1 V typ., max 5.0 mA; R

ST(ON)

< 375 Ω

GND disconnect

at 1.6 mA. The use of ESD zener diodes as voltage clamp at
DC conditions is not recommended.

Inductive and overvoltage output clamp

V

Z

GND

PROFET

+ V

V

OUT

ON

3

V

IN

2

bb

ST

4

V

V

IN

V

ST

bb

Any kind of load. In case of Input=high is V
Due to V

>0, no VST = low signal available.

GND

bb

PROFET

GND

1

V

GND

OUT

OUT

≈ V

5

- V

IN

IN(T+)

.

V

clamped to 47 V typ.

ON

Infineon Technologies AG Page 7 2006-Mar-28

PROFET

GND disconnect with GND pull up

3

V

IN

2

ST

4

V

V

V

bb

ST

IN

bb

PROFET

GND

1

V

GND

OUT

5

Any kind of load. If V
Due to V

>0, no VST = low signal available.

GND

GND

>

VIN - V

device stays off

IN(T+)

Vbb disconnect with energized inductive
load

3

high

V

bb

IN

2

ST

4

For inductive load currents up to the limits defined by ZL
(max. ratings and diagram on page 8) each switch is
protected against loss of Vbb.

Consider at your PCB layout that in the case of Vbb dis­connection with energized inductive load all the load current
flows through the GND connection.

V

bb

PROFET

GND

1

OUT

5

®

ITS436L2

Inductive Load switch-off energy
dissipation

E

bb

E

AS

E

E

E

Load

L

R

V

IN

=

ST

bb

PROFET

GND

OUT

L

{Z

R

L

L

Energy stored in load inductance:

L

L

2

1

E

/

=

·L·I

2

While demagnetizing load inductance, the energy
dissipated in PROFET is

= Ebb + EL - ER= ∫ V

E

AS

with an approximate solution for R

· L

I

L

=

·(V

E

AS

2

·R

+ |V

bb

OUT(CL)

L

|)· ln (1+

ON(CL)·iL

L

> 0 Ω:

|V

(t) dt,

I

L·RL

OUT(CL)

|

)

Maximum allowable load inductance for
a single switch off

j,start

L

150°C,T

=

0 Ω

=

L = f (I

V

Z

); T

L

12 V, R

=

bb

[mH]

L

1000

150°C const.,

=

C

100

10

1

0.1
02 4610121416 18

IL [A]

Infineon Technologies AG Page 8 2006-Mar-28

PROFET

Typ. on-state resistance

RON = f (Vbb,Tj ); IL = 2 A, IN = high

R

[mΩ]

ON

80

70

60

50

40

30

Tj = 150°C

25°C

-40°C

®

ITS436L2

20

10

3 5 7 9 30 40

V

bb

[V]

Typ. standby current

I

= f (Tj ); V

bb(off)

[µA]

I

bb(off)

45

40

35

30

25

20

= 9...34 V, IN1,2 = low

bb

15

10

5

0

-50 0 50 100 150 200

T

[°C]

j

Infineon Technologies AG Page 9 2006-Mar-28

PROFET

Timing diagrams

Figure 1a: Vbb turn on:

IN

V

bb

V

OUT

ST open drain

Figure 2b: Switching a lamp,

IN

ST

V

OUT

I

t

L

®

ITS436L2

proper turn on under all conditions

Figure 2a: Switching a resistive load,
turn-on/off time and slew rate definition:

IN

V

OUT

90%

t

on

dV/dton

10%

I

L

t

off

dV/dtoff

The initial peak current should be limited by the lamp and not by the
current limit of the device.

Figure 2c: Switching an inductive load

IN

ST

V

OUT

I

L

t

I

L(OL)

*) if the time constant of load is too large, open-load-status may
occur

t

t

Infineon Technologies AG Page 10 2006-Mar-28

t

t

PROFET

Figure 3a: Short circuit

shut down by overtemperature, reset by cooling

IN

I

L

ST

other channel: normal operation

I

L(lim)

I

L(SCr)

t

off(SC)

®

ITS436L2

Figure 5a: Open load: detection in ON-state, open

load occurs in on-state

IN

ST

V

I

OUT

L

t

d(ST OL)

normal

open

t

d(ST OL)

normal

t

Heating up of the chip may require several milliseconds, depending
on external conditions

Figure 4a: Overtemperature:
Reset if T

<Tjt

j

IN

ST

V

OUT

T

J

t

= 10 µs typ.

d(ST OL)

Figure 5b: Open load: turn on/off to open load

IN

ST

d(STOL4)

I

L

t

t

Infineon Technologies AG Page 11 2006-Mar-28

PROFET

Package and Ordering Code

All dimensions in mm

Standard (=staggered): PG-TO220-5-11

Sales code ITS436L2

Ordering code: SP000221231

±0.2

10

±0.15

9.8

8.5

3.7

-0.15

1)

±0.3

±0.3

13.4

17

15.65

C

0...0.15

1.7

1)

Typical
All metal surfaces tin plated, except area of cut.

Straight: PG-TO220-5-12

Sales code ITS436L2 S

Ordering code: SP000221232

10

9.8

8.5

3.7

1)

±0.2
±0.15

1)

-0.15

0.8

±0.2

2.8

±0.3

8.6

±0.1

A

4.4

±0.1

1.27

0.05

±0.2

9.25

±0.3

10.2

±0.3

3.7

0.5

2.4

M

A0.25

C

A

1.27

B

4.4

±0.1

8.4

3.9

±0.4

®

ITS436L2

Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2006
All Rights Reserved.

Attention please!

The information herein is given to describe certain
components and shall not be considered as a guarantee of
characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not
limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon
Technologies Representatives worldwide (see address list).

±0.1

Warnings

Due to technical requirements components may contain

±0.4

dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office.

Infineon Technologies Components may only be used in life­support devices or systems with the express written
approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the
failure of that life-support device or system, or to affect the
safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the
human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be
endangered.

1)

±0.3

±0.3

13.4

17

15.65

C

0...0.15

1.7

Typical

1)

All metal surfaces tin plated, except area of cut.

6x

0.8

±0.2

2.8

±0.5

11

±0.1

±0.5

13

0.05

2.4

M

BA0.25

C

0.5

±0.2

9.25

±0.1

Infineon Technologies AG Page 12 2006-Mar-28