Features
Pulsed Drain C
t
c
Single Pulse Aval
gy
d
Single Pulse Aval
gy Tested Value
h
Aval
t
c
R
titive Aval
gy
g
g
l
Logic Level
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
G
TO-220AB
IRLZ44ZPbF
PD - 95539A
IRLZ44ZPbF
IRLZ44ZSPbF
IRLZ44ZLPbF
HEXFET® Power MOSFET
D
V
= 55V
DSS
R
S
D2Pak
IRLZ44ZSPbF
DS(on)
ID = 51A
= 13.5mΩ
TO-262
IRLZ44ZLPbF
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
I
DM
PD @TC = 25°C
V
GS
E
AS (Thermally limited)
(Tested )
E
AS
I
AR
E
AR
T
J
T
STG
Parameter Units
Continuous Drain Current, V
Continuous Drain Current, V
urren
Power Dissipation W
Linear Derating Factor W/°C
Gate-to-Source Voltage V
anche Curren
epe
Operating Junction and
Storage Temperature Range°C
Soldering Temperature, for 10 seconds
Mountin
anche Ener
anche Ener
anche Ener
Torque, 6-32 or M3 screw
GS
GS
@ 10V
@ 10V
i
(Silicon Limited)
See Fig.12a, 12b, 15, 16
300 (1.6mm from case )
Max.
204
0.53
± 16
110
-55 to + 175
y
10 lbf
in (1.1Nym)
51
36
80
78
A
mJ
A
mJ
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount)
k
ik
ik
jk
––– 1.87 °C/W
0.50 –––
––– 62
––– 40
www.irf.com 1
10/01/10
IRLZ44Z/S/LPbF
El
l Ch
@ T
= 25°C (unl
ified)
/
Ω
Ω
Ω
g
g
(
)
ectrica
aracteristics
J
ess otherwise spec
Parameter Min. Typ. Max. Units
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
fs Forward Transconductance 27 ––– ––– V
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
C
oss
Drain-to-Source Breakdown Voltage55––––––V
∆T
Breakdown Voltage Temp. Coefficient ––– 0.05 ––– V/°C
J
Static Drain-to-Source On-Resistance ––– 11 13.5
––– ––– 20
––– ––– 22.5
Gate Threshold Voltage 1.0 ––– 3.0 V
Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to-Source Reverse Leaka
e ––– ––– -200
Total Gate Charge ––– 24 36
Gate-to-Source Charge ––– 7.5 ––– nC
Gate-to-Drain ("Miller") Charge–––12–––
Turn-On Delay Time ––– 14 –––
Rise Time ––– 160 –––
Turn-Off Delay Time ––– 25 ––– ns
Fall Time ––– 42 –––
Internal Drain Inductance ––– 4.5 ––– Between lead,
Internal Source Inductance ––– 7.5 ––– from package
Input Capacitance ––– 1620 –––
Output Capacitance ––– 230 –––
Reverse Transfer Capacitance ––– 130 ––– pF
Output Capacitance ––– 860 –––
Output Capacitance ––– 180 –––
Effective Output Capacitance ––– 280 –––
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current ––– ––– 51
(Body Diode) A
Pulsed Source Current ––– ––– 204
Body Diode
c
Diode Forward Voltage––––––1.3V
Reverse Recovery Time –––2132ns
Reverse Recovery Charge ––– 16 24 nC
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, I
m
V
= 10V, ID = 31A
GS
m
V
= 5.0V, ID = 30A
GS
m
VGS = 4.5V, ID = 15A
D
e
e
e
VDS = VGS, ID = 250µA
= 25V, ID = 31A
V
DS
V
= 55V, VGS = 0V
DS
V
= 55V, VGS = 0V, TJ = 125°C
DS
= 16V
V
GS
V
= -16V
GS
= 31A
I
D
V
= 44V
DS
VGS = 5.0V
e
VDD = 50V
I
= 31A
D
R
= 7.5 Ω
G
VGS = 5.0V
e
nH 6mm (0.25in.)
and center of die contact
VGS = 0V
V
= 25V
DS
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
V
= 0V, VDS = 44V, ƒ = 1.0MHz
GS
V
= 0V, VDS = 0V to 44V
GS
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
= 25°C, IS = 31A, VGS = 0V
J
TJ = 25°C, IF = 31A, VDD = 28V
di/dt = 100A/µs
e
= 1mA
D
G
S
f
e
2 www.irf.com
IRLZ44Z/S/LPbF
1000
)
A
(
t
100
n
e
r
r
u
C
e
c
r
10
u
o
S
o
t
n
i
a
r
1
D
,
D
I
3.0V
≤
TOP 15V
BOTTOM 3.0V
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
1000.0
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
)
A
(
t
n
e
r
r
u
C
e
c
r
u
o
S
o
t
n
i
a
r
D
,
I
1000
TOP 15V
100
BOTTOM 3.0V
10
D
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
≤
60µs PULSE WIDTH
Tj = 175°C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
60
)
Α
(
t
n
e
r
r
100.0
u
C
e
c
r
u
o
S
o
t
-
10.0
n
i
a
r
D
,
D
I
1.0
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
TJ = 25°C
TJ = 175°C
V
= 20V
DS
≤
60µs PULSE WIDTH
VGS, Gate-to-Source Voltage (V)
)
S
(
e
c
n
a
t
c
40
u
d
n
o
c
s
n
a
r
T
d
r
a
20
w
r
o
F
,
s
f
G
V
DS
TJ = 175°C
TJ = 25°C
= 10V
380µs PULSE WIDTH
0
0 1020304050
ID, Drain-to-Source Current (A)
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. Drain Current
www.irf.com 3
IRLZ44Z/S/LPbF
2500
2000
)
F
p
(
e
1500
c
n
a
t
i
c
a
p
1000
a
C
,
C
500
0
1 10 100
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
gs
gd
ds
Ciss
Coss
Crss
+ Cgd, C
+ C
iss
C
rss
C
oss
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000.0
)
A
(
t
100.0
n
e
r
r
u
C
n
i
a
r
10.0
D
e
s
r
e
v
e
R
,
D
S
I
TJ = 175°C
TJ = 25°C
1.0
0.1
0.2 0.6 1.0 1.4 1.8
VSD, Source-to-Drain Voltage (V)
12
SHORTED
ds
gd
ID= 31A
)
V
10
(
e
g
a
t
l
o
8
V
e
c
r
u
6
o
S
o
t
e
t
4
a
G
,
S
G
2
V
0
0 1020304050
VDS= 44V
VDS= 28V
VDS= 11V
Q
Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
V
GS
= 0V
1000
)
A
(
t
100
n
e
r
r
u
C
e
c
r
u
10
o
S
o
t
n
i
a
r
D
1
,
Tc = 25°C
D
I
Tj = 175°C
Single Pulse
0.1
1 10 100 1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
V
, Drain-toSource Voltage (V)
DS
100µsec
1msec
10msec
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4 www.irf.com
Loading...