PD - 9.1307B
TO-220AB
IRLZ34N
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
G
D
V
= 55V
DSS
DS(on)
ID = 30A
= 0.035Ω
R
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 30
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 21 A
I
DM
PD @TC = 25°C Power Dissipation 68 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 110
Linear Derating Factor 0.45 W/°C
Gate-to-Source Voltage ±16 V
Single Pulse Avalanche Energy 110 mJ
Avalanche Current 16 A
Repetitive Avalanche Energy 6.8 mJ
Operating Junction and -55 to + 175
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
Thermal Resistance
R
θJC
R
θ CS
R
θJA
Junction-to-Case –––– –––– 2.2
Case-to-Sink, Flat, Greased Surface –––– 0.50 –––– °C/W
Junction-to-Ambient –––– –––– 62
Parameter Min. Typ. Max. Units
8/25/97
IRLZ34N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.065 – –– V/° C Reference to 25°C, ID = 1mA
J
––– ––– 0.035 VGS = 10V, ID = 16A
Static Drain-to-Source On-Resistance ––– ––– 0.046
Ω V
= 5.0V, ID = 16A
GS
––– ––– 0.060 VGS = 4.0V, ID = 14A
Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
Forward Transconductance 11 ––– ––– S VDS = 25V, ID = 16A
Drain-to-Source Leakage Current
––– ––– 25 VDS = 55V, VGS = 0V
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
µA
nA
Total Gate Charge ––– –– – 25 ID = 16A
Gate-to-Source Charge –– – ––– 5.2 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– ––– 1 4 VGS = 5.0V, See Fig. 6 and 13
Turn-On Delay Time ––– 8.9 ––– VDD = 28V
Rise Time ––– 100 –– – ID = 16A
Turn-Off Delay Time ––– 21 ––– RG = 6.5Ω, VGS = 5.0V
ns
Fall Time ––– 29 ––– RD = 1.8Ω, See Fig. 10
Internal Drain Inductance ––– 4.5 –––
Internal Source Inductance ––– 7.5 –––
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 880 ––– VGS = 0V
Output Capacitance ––– 220 – –– pF VDS = 25V
Reverse Transfer Capacitance ––– 94 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
RG = 25Ω, I
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– ––– 30
––– ––– 110
Diode Forward Voltage ––– –– – 1.3 V TJ = 25°C, IS = 16A, VGS = 0V
Reverse Recovery Time ––– 76 110 n s TJ = 25°C, IF = 16A
Reverse RecoveryCharge ––– 190 290 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
≤ 16A, di/dt ≤ 270A/µs, V
SD
TJ ≤ 175°C
= 25V, starting TJ = 25°C, L = 610µH
= 16A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
D
A
DD
≤ V
(BR)DSS
,
G
S
IRLZ34N
1000
VGS
TO P 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
100
BOTTOM 2.5V
10
1
D
I , Drain -to -S ou rce C urr ent (A )
2.5V
20µs PULSE W IDTH
T = 25 °C
0.1
0.1 1 10 100
V , Drain -to -Source V oltag e ( V)
DS
J
Fig 1. Typical Output Characteristics
1000
1000
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
100
BOTT OM 2.5V
10
2.5V
1
D
I , Drain -to -S ou rce C urr ent (A )
20µs PULSE WIDTH
T = 175°C
A
0.1
0.1 1 10 100
V , Dra in-to-So urc e V olta ge (V )
DS
J
A
Fig 2. Typical Output Characteristics
3.0
I = 27A
D
100
10
1
D
I , Dr a in-to - Sou r ce Cu rr en t ( A)
0.1
2345678910
T = 25°C
J
T = 175° C
J
V = 25V
DS
20µs PULSE WIDTH
V , Ga te-to-Source Voltage (V )
GS
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(No rm a lized)
1.0
0.5
DS(on)
R , Dr ain -to-S ou rc e O n R e si stan ce
A
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Ju nc tio n T em perat u re ( °C )
J
V = 1 0V
GS
A
Fig 4. Normalized On-Resistance
Vs. Temperature
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