INFINEON IRLZ24NSPBF Datasheet
PD - 91358E
IRLZ24NS/L
l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRLZ24NS)
l Low-profile through-hole (IRLZ24NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
G
HEXFET® Power MOSFET
D
V
R
DS(on)
= 55V
DSS
= 0.06Ω
ID = 18A
S
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
2
Pak is a surface mount power package capable of
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
2
D Pak
TO-262
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRLZ24NL) is available for lowprofile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 18
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 13 A
I
DM
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 45 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 72
Linear Derating Factor 0.30 W/°C
Gate-to-Source Voltage ±16 V
Single Pulse Avalanche Energy 68 mJ
Avalanche Current 11 A
Repetitive Avalanche Energy 4.5 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Junction-to-Case ––– 3.3
Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40
°C/W
°C
5/12/98
IRLZ24NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.061 ––– V/°C Reference to 25°C, ID = 1mA
J
––– ––– 0.060 VGS = 10V, ID = 11A
Static Drain-to-Source On-Resistance
––– ––– 0.075 Ω VGS = 5.0V, ID = 11A
––– ––– 0.105 VGS = 4.0V, ID = 9.0A
Gate Threshold Voltage 1. 0 ––– 2 .0 V VDS = VGS, ID = 250µA
Forward Transconductance 8.3 ––– ––– S VDS = 25V, ID = 11A
Drain-to-Source Leakage Current
––– ––– 25 VDS = 55V, VGS = 0V
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
µA
nA
VGS = 16V
Total Gate Charge ––– ––– 15 ID = 11A
Gate-to-Source Charge ––– ––– 3.7 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– ––– 8.5 VGS = 5.0V, See Fig. 6 and 13
Turn-On Delay Time ––– 7.1 ––– VDD = 28V
Rise Time ––– 74 ––– ID = 11A
Turn-Off Delay Time ––– 20 ––– RG = 12Ω, VGS = 5.0V
ns
Fall Time ––– 29 ––– RD = 2.4Ω, See Fig. 10
Internal Source Inductance 7.5
––– –––
Between lead,
nH
and center of die contact
Input Capacitance ––– 480 ––– VGS = 0V
Output Capacitance ––– 130 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 61 ––– ƒ = 1.0MHz, See Fig. 5
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
18
72
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 11A, VGS = 0V
Reverse Recovery Time ––– 60 90 ns TJ = 25°C, IF = 11A
Reverse Recovery Charge ––– 130 200 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
G
S
Notes:
I
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
= 25V, starting TJ = 25°C, L = 790µH
DD
RG = 25Ω, I
= 11A. (See Figure 12)
AS
≤ 11A, di/dt ≤ 290A/µs, V
SD
DD
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRLZ24N data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
≤ V
(BR)DSS
,
IRLZ24NS/L
)
A
)
A
A
A
100
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
10
1
D
I , D rain -to -S o u rc e Curre n t (A)
2.5V
20µs PULSE WIDTH
T = 25°C
0.1
0.1 1 10 100
V , Dra in-t o-So u rc e V o ltage (V
DS
J
Fig 1. Typical Output Characteristics
100
T = 25°C
J
T = 175°C
J
10
100
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
10
2.5V
1
D
I , D rain -to -S o u rc e Curre n t (A)
20µs PULSE WIDTH
T = 175°C
0.1
0.1 1 10 100
V , Dra in-t o-So u rc e V o ltage (V
DS
J
Fig 2. Typical Output Characteristics
3.0
I = 18 A
D
2.5
2.0
1.5
(Norm alized)
1
D
I , Dra in-to -S o urc e C u rre nt (A )
0.1
2345678910
V , Gate -to-S o urce V oltage (V)
GS
V = 15V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.0
0.5
DS(on)
R , D r ain -to- S ou r c e On Resi s tan c e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
V = 10 V
GS
Vs. Temperature
IRLZ24NS/L
)
A
)
A
A
)
A
g
800
600
400
V = 0V, f = 1M Hz
GS
C = C + C , C S H O RTE D
is s gs gd d s
C = C
rss g d
C = C + C
oss ds gd
C
iss
C
oss
C, Capacitance (pF)
200
C
rss
0
1 10 100
V , Drai n-to -So urce Voltage (V
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
15
I = 11 A
V , G a te -to -S o u rc e Vo lta g e (V)
12
GS
D
9
6
3
V = 44 V
DS
V = 28 V
DS
FOR TEST CIRCU IT
0
048121620
Q , T o ta l Ga te C h a rge (nC
G
SE E F IG U R E 13
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OP ER A T IO N IN T HIS A R E A L IMITE D
BY R
DS(on)
T = 175°C
J
10
SD
I , R ev er se D r a in Curre nt ( A )
1
0.4 0.8 1.2 1.6 2.0
V , Source-to-Drain Voltage (V)
SD
T = 25°C
J
V = 0V
GS
Fig 7. Typical Source-Drain Diode
100
10
D
I , D rain C u rr ent ( A )
T = 25 °C
C
T = 17 5 °C
J
le Pulse
Sin
1
1 10 100
V , Dra in-t o-Sou r ce Vo ltage (V
DS
Fig 8. Maximum Safe Operating Area
10µs
100µs
1ms
10ms
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