Applications
l DC Motor Drive
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Optimized for Logic Level Drive
l Very Low R
l Superior R*Q at 4.5V V
l Improved Gate, Avalanche and Dynamic dV/dt
DS(ON)
at 4.5V V
GS
GS
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD -97371
IRLS4030-7PPbF
HEXFET® Power MOSFET
D
V
DSS
D
typ.
S
S
G
D2Pak 7 Pin
S
R
DS(on)
G
max.
I
S
D
S
100V
3.2m
3.9m
190A
S
Ω
Ω
GDS
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Units
ID @ TC = 25°C
@ TC = 100°C Continuous Drain Current, VGS @ 10V
I
D
I
DM
P
@TC = 25°C
D
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
c
e
@ 10V
GS
Max.
190
130
750
370
2.5
± 16
13
-55 to + 175
300
10lbxin (1.1Nxm)
Avalanche Characteristics
f
d
320
See Fig. 14, 15, 22a, 22b
E
AS (Thermally limited)
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
c
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
θ
R
JA
θ
Junction-to-Case
Junction-to-Ambient (PCB Mount)
jk
ij
–––
––– 40
0.40
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
°C/W
www.irf.com 1
02/12/09
IRLS4030-7PPbF
/
h
/
f
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G(int)
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
gfs Forward Transconductance 250 ––– ––– S
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
eff. (ER)
C
oss
eff. (TR)
C
oss
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Drain-to-Source Breakdown Voltage 100 ––– ––– V
∆T
Breakdown Voltage Temp. Coefficient ––– 0.10 ––– V/°C
J
Static Drain-to-Source On-Resistance ––– 3.2 3.9
mΩ
––– 3.3 4.1
Gate Threshold Voltage 1.0 ––– 2.5 V
Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
Internal Gate Resistance
–––
2.0 ––– Ω
Total Gate Charge ––– 93 140 nC
Gate-to-Source Charge ––– 27 –––
Gate-to-Drain ("Miller") Charge ––– 43 –––
Total Gate Charge Sync. (Qg - Qgd)
––– 50 –––
Turn-On Delay Time ––– 53 ––– ns
Rise Time ––– 160 –––
Turn-Off Delay Time ––– 110 –––
Fall Time ––– 87 –––
Input Capacitance ––– 11490 –––
Output Capacitance ––– 680 –––
Reverse Transfer Capacitance ––– 300 ––– pF
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Continuous Source Current ––– –––
––– 760 –––
––– 1170 –––
g
190
(Body Diode)
Pulsed Source Current ––– ––– 750
(Body Diode)
c
Diode Forward Voltage ––– ––– 1.3 V
Reverse Recovery Time ––– 53 ––– ns
––– 63 –––
Reverse Recovery Charge ––– 99 ––– nC
––– 155 –––
Reverse Recovery Current ––– 3.3 ––– A
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, I
V
= 10V, ID = 110A
GS
= 4.5V, ID = 94A
V
GS
= VGS, ID = 250µA
V
DS
V
= 100V, VGS = 0V
DS
V
= 100V, VGS = 0V, TJ = 125°C
DS
= 16V
V
GS
V
= -16V
GS
Conditions
VDS = 25V, ID = 110A
I
= 110A
D
= 50V
V
DS
V
= 4.5V
GS
= 110A, VDS =0V, VGS = 4.5V
I
D
V
= 65V
DD
I
= 110A
D
R
= 2.7Ω
G
VGS = 4.5V
V
= 0V
GS
V
= 50V
DS
f
f
ƒ = 1.0MHz
V
= 0V, VDS = 0V to 80V
GS
V
= 0V, VDS = 0V to 80V
GS
Conditions
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
= 25°C, IS = 110A, VGS = 0V
T
J
T
= 25°C VR = 85V,
J
T
= 125°C IF = 110A
J
T
= 25°C
J
T
= 125°C
J
T
= 25°C
J
= 5mA
D
f
f
di
dt = 100A/µs
c
h
g
D
G
S
f
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
RG = 25Ω, I
above this value .
I
≤ 110A, di/dt ≤ 1520A/µs, V
SD
, starting TJ = 25°C, L = 0.05mH
Jmax
= 110A, VGS =10V. Part not recommended for use
AS
≤ V
DD
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2 www.irf.com
(BR)DSS
, TJ ≤ 175°C.
C
eff. (TR) is a fixed capacitance that gives the same charging time
oss
as C
C
C
while V
oss
eff. (ER) is a fixed capacitance that gives the same energy as
oss
while V
oss
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
DS
DSS
DSS
.
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
R
is measured at TJ approximately 90°C.
θ
R
value shown is at time zero.
θJC
IRLS4030-7PPbF
1000
TOP 10V
)
A
(
t
n
e
r
100
r
u
C
e
c
r
u
o
S
o
t
-
10
n
i
a
r
D
,
D
I
2.5V
≤
BOTTOM 2.5V
60µs PULSE WIDTH
Tj = 25°C
1
0.1 1 10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
)
A
(
100
t
n
e
r
r
u
C
e
c
r
10
u
o
S
o
t
n
i
a
r
1
D
,
D
I
TJ = 25°C
TJ = 175°C
V
= 25V
DS
≤
60µs PULSE WIDTH
0.1
1 2 3 4 5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
VGS
5.0V
4.5V
4.0V
3.5V
3.0V
2.7V
1000
VGS
5.0V
4.5V
4.0V
3.5V
3.0V
2.7V
)
A
(
t
n
e
r
r
u
C
e
c
r
u
o
S
o
t
n
i
a
r
D
,
D
I
100
2.5V
60µs PULSE WIDTH
≤
TOP 10V
BOTTOM 2.5V
Tj = 175°C
10
0.1 1 10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3.0
e
c
n
a
t
s
i
s
e
R
n
O
)
e
d
c
e
r
z
u
i
l
o
a
S
-
m
o
r
t
o
n
N
i
(
a
r
D
,
)
n
o
(
S
D
R
2.5
2.0
1.5
1.0
ID = 110A
V
= 10V
GS
0.5
-60 -40 -20 0 20 40 60 80 100 120140160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
100000
)
F
10000
p
(
e
c
n
a
t
i
c
a
p
a
C
1000
,
C
100
V
= 0V, f = 1 MHZ
GS
C
= C
C
C
iss
rss
oss
= C
= C
+ Cgd, C
gs
gd
+ C
ds
C
iss
C
oss
C
rss
SHORTED
ds
gd
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
5.0
ID= 110A
)
V
(
4.0
e
g
a
t
l
o
V
3.0
e
c
r
u
o
S
o
t
2.0
e
t
a
G
,
S
1.0
G
V
VDS= 80V
VDS= 50V
0.0
0 20 40 60 80 100 120
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage
www.irf.com 3
Loading...