INFINEON IRLR8721PBF Datasheet

Absolute Maximum Ratings

V

Continuous Drain Current, V

@ 10V

ID @ TC = 100°C

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

c

PD @TC = 25°C

T

Thermal Resistance

R

Junct ion-to-Ambient (PCB Mount)

g

R

65f46

IRLR8721PbF-1

Compatible with Existing Surface Mount Techniques

Form

Quantity

Standar d Pack

HEXFET® Power MOSFET

V

DS

R

DS(on) max

(@VGS = 10V)

Q

g (typica l)

I

D

(@TC = 25°C)

Features Benefits

Industry-standard pinout D-Pak

30 V

8.4

m

8.5 nC

65

f

D

Ω

G

A

S

G

D-Pak

IRLR8721PbF-1

Multi-Vendor Compatibility

⇒

Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Industrial qualification Increased Reliability

Base Part Number Package Type

IRLR8721PbF-1 D-Pak Tape and Reel 2000 IRLR8721TRPbF-1

DS

GS

I

@ TC = 25°C

D

I

DM

P

@TC = 100°C

D

T

J

STG

Parameter Units

Drain-to-Source Voltage V

Gate-to-Source Voltage

GS

Maximum Power Dissipation

Linear Derating Factor W/°C Operating Junction and °C

Storage Temperature Range

Max.

± 20

260

0.43

-55 to + 175

Orderable part number

30

f

65

33

S

A

W

Parameter Typ. Max. Units

θJC

θJA

Junct ion-to-Case ––– 2.3

Junct ion-to-Ambient ––– 110

Notes  through  are on page 12

––– 50 °C/W

Static @ TJ = 25°C (unless otherwise specified)

BV

ΔΒ

V

/ΔT

R

m

Ω

V

Δ

V

I

Q

QswSwitch Charge (Q

+ Qgd)

Q

R

Ω

t

C

Avalanche Characteristics

EASSingle Pulse Avalanche Energy

dh

IARAvalanche Current

c

EARRepetitive Avalanche Energy

c

Diode Characteristics

Parameter

Min.

Typ.

Max.

Units

I

65

f

I

(Body Diode)

V

t

Q

t

di/dt = 300A/μs

f

Ω

Parameter Min. Typ. Max. Units

DSS

DS(on)

GS(th)

DSS

GSS

gfs Forward Transconductance 46 ––– ––– S

g

gs1

gs2

gd

godr

oss

G

d(on)

r

d(off)

f

iss

oss

rss

Drain-to-Source Breakdown Voltage 30 ––– ––– V

Breakdown Voltage Temp. Coefficient ––– 21 ––– mV/°C

J

Static Drain-to-Source On-Resistance ––– 6.3 8.4

––– 10.1 11.8

Gate Threshold Voltage 1.35 1.9 2.35 V

Gate Threshold Voltage Coefficient ––– -6.8 ––– mV/°C

Drain-to-Source Leakage Current ––– ––– 1.0 μA

––– ––– 150

Gate-to-Source Forward Leakage ––– ––– 100 nA

Gate-to-Source Reverse Leakage ––– ––– -100

Total Gate Charge ––– 8.5 13

Pre-Vth Gate-to-Source Charge ––– 1.9 –––

Post-Vth Gate-to-Source Charge ––– 1.2 ––– nC

Gate-to-Drain Charge ––– 3.4 –––

Gate Charge Overdrive ––– 2.0 ––– See Fig. 16

gs2

––– 4.6 –––

Output Charge ––– 7.9 ––– nC

Gate Resistance ––– 2.3 3.8

Turn-On Delay Time ––– 8.8 –––

Rise Time ––– 30 –––

Turn-Off Delay Time ––– 9.4 ––– ns

Fall Time ––– 6.5 –––

Input Capacitance ––– 1030 –––

Output Capacitance ––– 350 ––– pF

Reverse Transfer Capacitance ––– 110 –––

IRLR8721PbF-1

Conditions

VGS = 0V, ID = 250μA

Reference to 25°C, I

= 10V, ID = 25A

V

GS

V

= 4.5V, ID = 20A

GS

V

= VGS, ID = 25μA

DS

V

= 24V, VGS = 0V

DS

= 24V, VGS = 0V, TJ = 125°C

V

DS

VGS = 20V

= -20V

V

GS

VDS = 15V, ID = 20A

V

= 15V

DS

V

= 4.5V

GS

= 20A

I

D

V

= 16V, VGS = 0V

DS

V

= 15V, VGS = 4.5V

DD

ID = 20A

RG = 1.8 See Fig. 14

= 0V

V

GS

= 15V

V

DS

ƒ = 1.0MHz

= 1mA

D

f

Parameter Units

Typ.

–––

Max.

93

20

6.5

mJ

A

mJ

Conditions

S

SM

rr

on

Continuous Source Current ––– –––

(Body Diode) Pulsed Source Current ––– ––– 260

ch

SD

Diode Forward Voltage ––– ––– 1.0 V

Reverse Recovery Time ––– 17 26 ns

rr

Reverse Recovery Charge ––– 24 36 nC

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

A

MOSFET symbol

showing the integral reverse

p-n junction diode. TJ = 25°C, IS = 20A, VGS = 0V

= 25°C, IF = 20A, VDD = 15V

T

J

G

D

S

f

IRLR8721PbF-1

1000

2.7V

VGS

8.0V

5.0V

4.5V

4.0V

3.5V

3.0V

60μs PULSE WIDTH

≤

TOP 10V

) A

(

100

t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

BOTTOM 2.7V

10

1

Tj = 25°C

0.1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

1000

) A

( t

100

n e

r

r u

C e

c

r

10

u o S

o

t

n

i a

r

1

D ,

D

I

TJ = 25°C

V

DS

≤60μs PULSE WIDTH

0.1 0 2 4 6 8 10

VGS, Gate-to-Source Voltage (V)

TJ = 175°C

= 15V

1000

VGS

8.0V

5.0V

4.5V

4.0V

3.5V

3.0V

2.7V

60μs PULSE WIDTH

≤

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

, I

100

10

D

TOP 10V

BOTTOM 2.7V

Tj = 175°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

e c n a

t s

i s e

R n O e

c

r u o S

o

t

n

i a

r D

,

) n o

( S D

R

ID = 25A

V

= 10V

GS

1.5

) d e z

i

l a

m

r o

N

(

1.0

0.5

-60 -40 -20 0 20 40 60 80 100120140160180

TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

vs. Temperature

IRLR8721PbF-1

10000

) F p

( e

c n a

t

i c a p a

C ,

C

1000

100

10

V

= 0V, f = 1 MHZ

GS

C

= C

iss

rss

oss

= C

gs

gd

ds

C

iss

C

oss

C

rss

C

1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

1000

) A

( t

100

n e

r

r u

C n

i a

r

10

D e

s

r e v e

R ,

D S

I

0.1

TJ = 175°C

1

0.0 0.5 1.0 1.5 2.0

VSD, Source-to-Drain Voltage (V)

+ Cgd, C

+ C

gd

TJ = 25°C

SHORTED

ds

V

GS

= 0V

) V

( e

g a

t

l o V

e c

r u o S

o

t

e

t a

G ,

V

5.0 ID= 20A

4.0

3.0

2.0

S

1.0

G

0.0

0246810

VDS= 24V

VDS= 15V

VDS= 6.0V

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

1000

) A

( t

100

n e

r

r u

C e

c

r u

10

o S

o

t

n

i a

r D

1

,

D

I

Tc = 25°C Tj = 175°C Single Pulse

0.1

0 1 10 100

OPERATION IN THIS AREA LIMITED BY RDS(on)

100μsec

1msec

10msec

VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

INFINEON IRLR8721PBF Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual