INFINEON IRLR120NPBF Datasheet
IRLR120NPbF
Form
Quantity
Standard Pack
IRLU120NPbF
l Surface Mount (IRLR120N)
l Straight Lead (IRLU120N)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
G
HEXFET® Power MOSFET
D
V
= 100V
DSS
DS(on)
= 0.185Ω
R
Description
I
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve the lowest possible
on-resistance per silicon area. This benefit, combined with the
fast switching speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer with
an extremely efficient device for use in a wide variety of
applications.
The D-PAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight lead
version (IRFU series) is for through-hole mounting applications.
Power dissipation levels up to 1.5 watts are possible in typical
surface mount applications.
Tube 75 IRLR120NPbF
IRLR120NPbF D-Pak
IRLU120NPbF IPak Tube 75 IRLU120NPbF
Tape and Reel 2000 IRLR120NTRPbF
Tape and Reel Left 3000 IRLR120NTRLPbF
Tape and Reel Right
D
S
G
D-Pak
IRLR120NPbF
Orderable Part NumberBase Part Number
3000 IRLR120NTRRPbF EOL notice # 289
S
= 10A
D
S
D
G
I-Pak
IRLU120NPbF
NotePackage Type
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 10
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 7.0 A
I
DM
PD @TC = 25°C Power Dissipation 48 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 35
Linear Derating Factor 0.32 W/°C
Gate-to-Source Voltage ± 16 V
Single Pulse Avalanche Energy 85 mJ
Avalanche Current 6.0 A
Repetitive Avalanche Energy 4.8 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
R
θJA
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Junction-to-Case ––– 3.1
Junction-to-Ambient (PCB mount) ** ––– 50 °C/W
Junction-to-Ambient ––– 110
IRLR/U120NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
ΔV
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
RG = 25Ω, I
I
SD
TJ ≤ 175°C
Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250μA
/ΔT
Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.185 V
––– ––– 0.225 Ω V
= 10V, ID = 6.0A
GS
= 5.0V, ID = 6.0A
GS
––– ––– 0.265 VGS = 4.0V, ID = 5.0A
Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250μA
Forward Transconductance 3.1 ––– ––– S VDS = 25V, ID = 6.0A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
VDS = 100V, VGS = 0V
μA
= 16V
V
GS
nA
Total Gate Charge ––– ––– 20 ID = 6.0A
Gate-to-Source Charge ––– ––– 4.6 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– ––– 10 VGS = 5.0V, See Fig. 6 and 13
Turn-On Delay Time ––– 4.0 ––– VDD = 50V
Rise Time ––– 35 –––
Turn-Off Delay Time ––– 23 ––– RG = 11Ω, VGS = 5.0V
ns
ID = 6.0A
Fall Time ––– 22 ––– RD = 8.2Ω, See Fig. 10
Internal Drain Inductance 4.5
Internal Source Inductance ––– 7.5 –––
Between lead,
nH
6mm (0.25in.)
from package
and center of die contact
Input Capacitance ––– 440 ––– VGS = 0V
Output Capacitance ––– 97 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 50 ––– ƒ = 1.0MHz, See Fig. 5
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
35
10
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 6.0A, VGS = 0V
Reverse Recovery Time ––– 110 160 ns TJ = 25°C, IF =6.0A
Reverse RecoveryCharge ––– 410 620 nC di/dt = 100A/μs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300μs; duty cycle ≤ 2%.
= 25V, starting TJ = 25°C, L = 4.7mH
= 6.0A. (See Figure 12)
AS
≤ 6.0A, di/dt ≤ 340A/μs, V
DD
≤ V
(BR)DSS
This is applied for I-PAK, L
of D-PAK is measured between lead and
S
center of die contact
,
Uses IRL520N data and test conditions.
D
G
S
D
G
S
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 9, 2014
IRLR/U120NPbF
A
A
A
A
100
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
10
1
2.5V
D
I , Drain-to-Source Current (A)
20μs PULSE WIDTH
T = 25°C
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 1. Typical Output Characteristics
100
100
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
10
2.5V
1
D
I , Drain-to-Source Current (A)
20μs PULSE WIDTH
T = 175°C
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output Characteristics
3.0
I = 10A
D
T = 25°C
J
T = 175°C
10
1
D
I , Drain-to-Source Current (A)
0.1
246810
V , Gate-to-Source Voltage (V)
GS
J
V = 50V
DS
20μs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
V = 10V
GS
Vs. Temperature
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IRLR/U120NPbF
A
A
A
A
800
600
400
V = 0V, f = 1MHz
GS
C = C + C , C SHORTED
iss gs gd ds
C = C
rss gd
C = C + C
oss ds gd
C
iss
C
oss
C, Capacitance (pF)
200
C
rss
0
1 10 100
V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
T = 175°C
10
J
T = 25°C
J
15
I = 6.0A
D
12
9
6
3
GS
V , Gate-to-Source Voltage (V)
V = 80V
DS
V = 50V
DS
V = 20V
DS
FOR TEST CIRCUIT
0
0 5 10 15 20 25
Q , Total Gate Charge (nC)
G
SEE FIGURE 13
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
10
DS(on)
10μs
100μs
1ms
1
SD
I , Reverse Drain Current (A)
0.1
0.4 0.6 0.8 1.0 1.2 1.4
V , Source-to-Drain Voltage (V)
SD
V = 0V
Fig 7. Typical Source-Drain Diode
GS
1
D
I , Drain Current (A)
T = 25°C
C
T = 175°C
J
Single Pulse
0.1
1 10 100 1000
V , Drain-to-Source Voltage (V)
DS
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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