G 3
S
D2
D1
4S
5D
6D
TOP VIEW
D
Absolute Maximum Ratings
GS
D
D
D
D
D
DM
Pulsed Drain Current
c
Power Dissipat ion
g
Power Dissipat ion
g
Linear Derating Factor
W/°C
J
STG
IRLHS6342PbF
IRLHS6342TR2PbF
PQFN 2mm x 2mm
Tape and Reel
400
EOL notice # 259
Standar d Pack
DSon
≤
≤
HEXFET® Power MOSFET
V
DS
V
GS
R
DS(on) max
(@VGS = 4.5V)
Q
g (typical)
I
D
(@T
C (Bottom)
= 25°C)
30 V
12 V
±
15.5
11
12
i
m
nC
Ω
A
2mm x 2mm PQFN
Applications
• Charge and discharge switch for battery application
• System/Load Switch
Features and Benefits
Features Result ing Benefits
Low R
Low Thermal Resistance to PCB (
Low Profile (
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification Increased Reliability
(≤ 15.5mΩ) Lower Conduction Losses
13°C/W) Enable better thermal dissipation
0.9 mm) results in Increased Power Density
Easier Manufact uring
Environmentally Friendlier
D
D
D
D
D
S
G
S
Orderable part number Package Type
IRLHS6342TRPbF PQFN 2mm x 2mm Tape and Reel 4000
V
DS
V
@ TA = 25°C
I
I
@ TA = 70°C
I
I
I
I
PD @TA = 25°C
PD @TA = 70°C
T
T
@ T
@ T
@ T
C(Bottom)
C(Bottom)
C(Bottom)
= 25°C
= 70°C
= 25°C
Notes through are on page 2
1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013
Parameter Units
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
g
Operating Junction and
Storage Temperature Range
Form Quantity
@ 10V
GS
@ 10V
GS
@ 10V
GS
@ 10V
GS
@ 10V (Wirebond Limited)
GS
Max.
30
±12
8.7
6.9
hi
19
hi
15
i
12
76
2.1
1.3
0.02
-55 to + 150
Note
V
A
W
°C
Thermal Resistance
θ
JC
Junction-to-Case
g
R
θ
JC
(Top)
Junction-to-Case
g
–––
90
θ
JA
Junction-to-Ambient
f
R
θ
JA
Junction-to-Ambient (<10s)
f
–––
42
Static @ TJ = 25°C (unless otherwise specified)
ΔΒ
Δ
–––
Avalanche Characteristics
Single Pulse Avalanche Energy
d
Avalanche Current
c
Diode Characteristics
(Body Diode)
Parameter Min. Typ. Max. Units
BV
DSS
V
/ΔT
DSS
J
R
DS(on)
V
GS(th)
V
GS(th)
I
DSS
I
GSS
gfs Forward Transconductance 39 ––– ––– S
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 30 ––– ––– V
Breakdown Voltage Temp. Coefficient ––– 22 ––– mV/°C
Static Drain-to-Source On-Resistance ––– 12.0 15.5
––– 15.0 19.5
mΩ
Gate Threshold Voltage 0.5 ––– 1.1 V
Gate Threshold Voltage Coefficient ––– -4.2 ––– mV/°C
Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 150
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
Total Gate Charge ––– 11 –––
Gate-to-Source Charge ––– 0.5 –––
Gate-to-Drain Charge ––– 4.6 –––
Gate Resistance ––– 2.1
Turn-On Delay Time ––– 4.9 –––
Rise Time –––13–––
Turn-Off Delay Time ––– 19 –––
Fall Time ––– 13 –––
Input Capacitance ––– 1019 –––
Output Capacitance ––– 97 –––
Reverse Transfer Capacitance ––– 70 –––
IRLHS6342PbF
VGS = 0V, ID = 250μA
Reference to 25°C, I
= 4.5V, ID = 8.5A
V
GS
V
= 2.5V, ID = 8.5A
GS
V
= VGS, ID = 10μA
DS
V
= 24V, VGS = 0V
DS
μA
V
= 24V, VGS = 0V, TJ = 125°C
DS
= 12V
V
GS
nA
nC V
Ω
ns
pF
= -12V
V
GS
= 10V, ID = 8.5A
V
DS
= 15V
V
DS
= 4.5V
GS
I
= 8.5A (See Fig. 6 & 17)
D
= 15V, VGS = 4.5V
V
DD
= 8.5A
I
D
Ω
=1.8
R
G
See Fig.18
= 0V
V
GS
= 25V
V
DS
ƒ = 1.0MHz
Conditions
= 1mA
D
e
e
Parameter Units
E
AS
I
AR
Typ.
–––
–––
Parameter Min. Typ. Max. Units
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
c
––– ––– 12
––– ––– 76
i
Diode Forward Voltage ––– ––– 1.2 V
Reverse Recovery Time ––– 11 17 ns
Reverse Recovery Charge ––– 13 20 nC
Forward Turn-On Time Time is dominated by parasitic Inductance
Parameter Typ. Max. Units
(Bottom)
R
R
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
= 25°C, L = 0.39mH, RG = 50Ω, I
J
AS
= 8.5A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
R
is measured at T
θ
of approximately 90°C.
J
When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continuous current based on maximum allowable junction temperature.
Package is limited to 12A by die-source to lead-frame bonding technology
Max.
14
8.5
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
TJ = 25°C, IS = 8.5A, VGS = 0V
= 25°C, IF = 8.5A, VDD = 15V
T
J
di/dt = 300 A/μs
e
––– 13
––– 60
mJ
A
D
G
S
e
°C/W
2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013
IRLHS6342PbF
100
TOP 10V
)
A
(
t
n
e
r
10
r
u
C
e
c
r
u
o
S
o
t
-
1
n
i
a
r
D
,
D
I
1.4V
60μs PULSE WIDTH
≤
BOTTOM 1.4V
Tj = 25°C
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
)
A
(
t
n
e
r
r
u
C
e
c
r
u
o
S
o
t
n
i
a
r
D
,
D
I
TJ = 150°C
TJ = 25°C
10
V
= 15V
DS
≤
60μs PULSE WIDTH
1.0
1.0 1.5 2.0 2.5 3.0 3.5
VGS, Gate-to-Source Voltage (V)
VGS
4.5V
3.0V
2.5V
2.0V
1.8V
1.5V
100
)
A
(
t
n
e
r
r
u
C
e
c
r
10
u
o
S
o
t
n
i
a
r
D
,
D
I
1.4V
60μs PULSE WIDTH
≤
Tj = 150°C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
e
c
n
a
t
s
i
s
e
R
n
O
)
e
c
d
r
e
u
z
i
o
l
a
S
m
o
r
t
-
o
n
i
N
(
a
r
D
,
)
n
o
(
S
D
R
ID = 8.5A
V
1.8
GS
= 4.5V
1.6
1.4
1.2
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120140 160
TJ , Junction Temperature (°C)
TOP 10V
BOTTOM 1.4V
VGS
4.5V
3.0V
2.5V
2.0V
1.8V
1.5V
Fig 3. Typical Transfer Characteristics
10000
)
F
p
(
e
c
n
a
t
i
c
a
p
a
C
,
C
1000
100
10
V
= 0V, f = 1 MHZ
GS
C
= C
C
C
iss
rss
oss
= C
= C
+ Cgd, C
gs
gd
+ C
ds
C
iss
C
oss
C
rss
SHORTED
ds
gd
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
14.0
ID= 8.5A
12.0
)
V
(
e
g
10.0
a
t
l
o
V
e
8.0
c
r
u
o
S
-
6.0
o
t
e
t
a
4.0
G
,
S
G
V
2.0
VDS= 24V
VDS= 15V
VDS= 6.0V
0.0
0 5 10 15 20 25 30
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013
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