INFINEON IRLHS2242PBF Instructions

Absolute Maximum Ratings

V

ID @ TA = 25°C

Continuous Drain Current, V

@ 4.5V

Continuous Drain Current, V

@ 4.5V

ID @ T

= 25°C

Continuous Drain Current, V

@ 4.5V

Continuous Drain Current, V

@ 4.5V

ID @ TC = 25°C

Continuous Drain Current, V

@ 4.5V (Wirebond Limited)

Pulsed Drain Current

c

PD @TA = 25°C

Power Dissipation

g

Power Dissipation

g

Linear Derating Factor

W/°C

T

-9.8

-15hi -8.5

Q

G

3

S

D2

D1

4S

5D

6D

TOP VIEW

D

IRLHS2242PbF

≤

RoHS Compliant Containing no Lead, no Bromide and no Halogen

Form

Quantity

Standard Pack

HEXFET® Power MOSFET

V

DS

V

GS max

R

DS(on) max

(@VGS = 4.5V)

R

DS(on) max

(@VGS = 2.5V)

g typ

I

D

(@T

c(Bottom)

= 25°C)

-20 V

12 V

±

31

53

9.6

-8.5

i

m

nC

A

Ω

Applications

l Charge and Discharge Switch for Battery Application l System/load switch

Features and Benefits

Features Benefits

Low Thermal Resistance to PCB ( Low Profile ( Industry-Standard Pinout

Compatible with Existing Surface Mount Techniques

MSL1, Industrial Qualification Increased Reliability

1.0mm) results in Increased Power Density

13° C/ W) Enable better thermal dissipati on

⇒

Multi-Vendor Compatibility Easier Manufacturing

Environmentally Friendlier

D

S

2mm x 2mm PQFN

D

G

S

Order able part number Package Type

IRLHS2242TRPbF PQFN 2mm x 2mm Tape and Reel 4000

IRLHS2242TR2PbF

DS

V

GS

ID @ TA = 70°C

C(Bottom)

ID @ T

I

DM

PD @T

T

J

STG

Notes  through  are on page 9

C(Bottom)

= 100°C

= 25°C

PQFN 2mm x 2mm Tape and Reel 400 EOL notice # 259

Drain-to-Source Voltage

Gate-to-Source Voltage

g

Operating Junction and

Storage Temperature Range

Note

Parameter Units

GS

Max.

-20

±12

-7.2

-5.8

hi

i

-34

2.1

9.6

0.02

-55 to + 150

V

A

W

°C

R

(Bottom)

Junction-to-Case

g

–––13R

(Top)

Junction-to-Case

g

–––

90

R

Junction-to-Ambient

f

–––60R

(<10s)

Junction-to-Ambient

f

–––

42

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max.

Units

BV

ΔΒ

V

/ΔT

R

V

Δ

V

I

Q

VDS = -10V

Q

QswSwitch Charge (Q

+ Qgd)

Q

–––

t

C

Avalanche Characteristics

EASSingle Pulse Avalanche Energy

d

IARAvalanche Current

c

Diode Characteristics

Parameter

Min.

Typ.

Max.

Units

I

(Body Diode)

V

t

Q

t

Ω

di/dt = 200A/μs

e

DSS

J

DS(on)

GS(th)

DSS

GSS

gfs Forward Transconductance 10 ––– ––– S

g

gs

gd

godr

oss

R

G

d(on)

r

d(off)

f

iss

oss

rss

Drain-to-Source Breakdown Voltage -20 ––– ––– V

Breakdown Voltage Temp. Coefficient ––– 0.01 ––– V/°C

Static Drain-to-Source On-Resistance ––– 25 31

––– 43 53

mΩ

Gate Threshold Voltage -0.4 -0.8 -1.1 V

Gate Threshold Voltage Coefficient ––– -3.8 ––– mV/°C

Drain-to-Source Leakage Current ––– ––– -1.0

––– ––– -150

Gate-to-Source Forward Leakage ––– ––– -100

Gate-to-Source Reverse Leakage ––– ––– 100

Total Gate Charge ––– 12 ––– nC

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain Charge

––– 9.6 –––

––– 1.6 –––

––– 3.7 –––

Gate Charge Overdrive ––– 4.3 –––

gs2

––– 4.8 –––

Output Charge ––– 6.8 ––– nC

Gate Resistance ––– 17 Turn-On Delay Time ––– 7.9 –––

Rise Time ––– 54 –––

Turn-Off Delay Time ––– 54 –––

Fall Time ––– 66 –––

Input Capacitance ––– 877 –––

Output Capacitance ––– 273 –––

Reverse Transfer Capacitance ––– 182 –––

IRLHS2242PbF

VGS = 0V, ID = -250μA

Reference to 25°C, I

V

= -4.5V, ID = -8.5A

GS

= -2.5V, ID = -6.8A

V

GS

= VGS, ID = -10μA

V

DS

= -16V, VGS = 0V

V

DS

μA

nA

nC

Ω

ns

pF

= -16V, VGS = 0V, TJ = 125°C

V

DS

= -12V

V

GS

V

= 12V

GS

VDS = -10V, ID = -8.5A

=-10V, VDS = -10V, ID = -8.5A

V

GS

= -4.5V

V

GS

I

= -8.5A

D

V

= 16V, VGS = 0V

DS

= -10V, VGS = -4.5V

V

DD

ID = -8.5A

R

= 2.0

G

V

= 0V

GS

V

= -10V

DS

ƒ = 1.0KHz

Conditions

= -1mA

D

e e

S

Continuous Source Current

(Body Diode)

SM

SD

rr

on

Pulsed Source Current

Diode Forward Voltage ––– ––– -1.2 V

Reverse Recovery Time ––– 27 41 ns

Reverse Recovery Charge ––– 20 30 nC

Forward Turn-On Time Time is dominated by parasitic Inductance

Thermal Resistance

θ

JC

θJC

θ

JA

θJA

Parameter Units

Typ.

–––

Max.

18

-8.5

Conditions

MOSFET symbol

showing the

A

integral reverse

p-n junction diode. TJ = 25°C, IS = -8.5A, VGS = 0V

T

= 25°C, IF = -8.5A, VDD = -10V

J

G

c

––– ––– -8.5

––– ––– -34

h

Parameter Typ. Max. Units

mJ

A

D

S

e

°C/W

IRLHS2242PbF

100

TOP -10V

) A

( t n e

r

10

u C e

c

r u o S

o

t

n

1

i a

r D

,

D

I

-

-1.5V

60μs

≤

BOTTOM -1.5V

PULSE WIDTH

Tj = 25°C

0.1

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

) A

( t

n e

r

10

u C e

c

r u o S

o

t

n

i a

r D

,

D

I

-

1

TJ = 150°C

TJ = 25°C

V

= -10V

DS

≤

60μs PULSE WIDTH

0.1 0 1 2 3 4 5

-VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

VGS

-7.0V

-4.5V

-3.5V

-2.5V

-2.0V

-1.8V

100

) A

( t n e

r

10

u C e

c

r u o S

o

t

n

1

i a

r D

,

D

I

-

0.1

-1.5V

60μs

≤

Tj = 150°C

TOP -10V

BOTTOM -1.5V

PULSE WIDTH

VGS

-7.0V

-4.5V

-3.5V

-2.5V

-2.0V

-1.8V

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1.4

e c n a

t s

i s e

R n O e

)

c

d

r

e

u

z

i

o

l

S

a

m

o

t

r

-

o

n

i

N

(

a

r D

,

) n o

( S D

R

1.2

1.0

0.8

ID = -8.5A

V

= -4.5V

GS

0.6

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance vs. Temperature

10000

) F p

( e

c n a

t

i c a p a

C ,

C

V

= 0V, f = 1 KHZ

GS

C

= C

1000

C

iss

rss

oss

= C

gs

gd

ds

C

oss

C

+ Cgd, C

+ C

iss

rss

SHORTED

ds

gd

100

1 10 100

-VDS, Drain-to-Source Voltage (V)

14

ID= -8.5A

)

12

V

( e

g a

10

t

l o V

e c

r u o S

o

t

e

t a

G ,

S G

V

-

VDS= -16V

VDS= -10V

VDS= -4V

8

6

4

2

0

0 5 10 15 20 25

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs.Gate-to-Source VoltageFig 5. Typical Capacitance vs.Drain-to-Source Voltage

INFINEON IRLHS2242PBF Instructions

Specifications and Main Features

Frequently Asked Questions

User Manual