PD -97363
)
)
)
IRLB3034PbF
Applications
HEXFET® Power MOSFET
l DC Motor Drive
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Optimized for Logic Level Drive
l Very Low R
l Superior R*Q at 4.5V V
l Improved Gate, Avalanche and Dynamic dV/dt
DS(ON)
at 4.5V V
GS
GS
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
Absolute Maximum Ratings
Symbol Parameter Units
ID @ TC = 25°C
I
@ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
D
I
@ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
D
I
DM
PD @TC = 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
d
f
D
V
R
DSS
DS(on
typ.
40V
max.
I
D (Silicon Limited
I
S
D (Package Limited
TO-220AB
IRLB3034PbF
GDS
Gate Drain Source
Max.
343
c
243
c
195
1372
375
2.5
±20
4.6
-55 to + 175
300
10lbfxin (1.1Nxm)
195A
1.4m
1.7m
343A
:
:
c
A
W
W/°C
V
V/ns
°C
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
d
d
e
255
See Fig. 14, 15, 22a, 22b,
mJ
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
j
–––
0.5 –––
––– 62
0.4
°C/W
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A
01/14/09
IRLB3034PbF
s
/
g
s
g
s
/
g
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G(int)
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit
fs Forward Transconductance 286 ––– ––– S
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
eff. (ER)
oss
C
eff. (TR)
oss
Diode Characteristics
Symbol Parameter Min. Typ. Max. Unit
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Drain-to-Source Breakdown Voltage 40 ––– ––– V
∆T
Breakdown Voltage Temp. Coefficient ––– 0.04 ––– V/°C
J
Static Drain-to-Source On-Resistance
––– 1.4 1.7
––– 1.6 2.0
Gate Threshold Voltage 1.0 ––– 2.5 V
Drain-to-Source Leakage Current ––– ––– 20
––– ––– 250
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leaka
e ––– ––– -100
Internal Gate Resistance ––– 2.1 –––
Total Gate Charge ––– 108 162
Gate-to-Source Charge ––– 29 –––
Gate-to-Drain ("Miller") Charge ––– 54 –––
Total Gate Charge Sync. (Qg - Qgd)
––– 54 –––
Turn-On Delay Time ––– 65 –––
Rise Time ––– 827 –––
Turn-Off Delay Time ––– 97 –––
Fall Time ––– 355 –––
Input Capacitance ––– 10315 –––
Output Capacitance ––– 1980 –––
Reverse Transfer Capacitance ––– 935 –––
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Continuous Source Current ––– –––
(Body Diode)
Pulsed Source Current ––– –––
(Body Diode)
d
––– 2378 –––
i
––– 2986 –––
h
343
1372
c
Diode Forward Voltage ––– ––– 1.3 V
Reverse Recovery Time ––– 39 –––
––– 41 –––
Reverse Recovery Charge ––– 39 –––
––– 46 –––
Reverse Recovery Current ––– 1.7 ––– A
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, I
= 10V, ID = 195A
V
GS
m
Ω
V
= 4.5V, ID = 172A
GS
= VGS, ID = 250µA
V
DS
V
= 40V, VGS = 0V
DS
µA
V
= 40V, VGS = 0V, TJ = 125°C
DS
V
= 20V
GS
nA
VGS = -20V
Ω
Conditions
VDS = 10V, ID = 195A
I
= 185A
D
= 20V
V
DS
nC
ns
pF
= 4.5V
V
GS
= 185A, VDS =0V, VGS = 4.5V
I
D
= 26V
V
DD
= 195A
I
D
R
= 2.1Ω
G
VGS = 4.5V
V
= 0V
GS
V
= 25V
DS
g
g
ƒ = 1.0MHz
V
= 0V, VDS = 0V to 32V
GS
= 0V, VDS = 0V to 32V
V
GS
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
TJ = 25°C, IS = 195A, VGS = 0V
TJ = 25°C VR = 34V,
ns
T
= 125°C IF = 195A
nC
J
TJ = 25°C
TJ = 125°C
TJ = 25°C
di
= 5mA
D
d
g
g
i
h
G
g
dt = 100A/µs
D
S
Notes:
Calcuted continuous current based on maximum allowable junction
temperature Bond wire current limit is 195A. Note that current
limitation arising from heating of the device leds may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
RG = 25Ω, I
above this value .
I
≤ 195A, di/dt ≤ 841A/µs, V
SD
, starting TJ = 25°C, L = 0.013mH
Jmax
= 195A, VGS =10V. Part not recommended for use
AS
DD
≤ V
(BR)DSS
, TJ ≤ 175°C.
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Pulse width ≤ 400µs; duty cycle ≤ 2%.
C
eff. (TR) is a fixed capacitance that gives the same charging time
oss
as C
C
C
R
while V
oss
eff. (ER) is a fixed capacitance that gives the same energy as
oss
while V
oss
is measured at TJ approximately 90°C
θ
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
DS
DSS
DSS
.
.
IRLB3034PbF
100000
VGS
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
60µs PULSE WIDTH
≤
Tj = 25°C
)
10000
A
(
t
n
e
r
r
u
1000
C
e
c
r
u
o
S
-
100
o
t
n
i
a
r
D
,
D
I
TOP 15V
BOTTOM 2.5V
10
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10000
)
A
1000
(
t
n
e
r
r
u
C
100
e
c
r
u
o
S
-
10
o
t
n
i
a
r
D
,
1
D
I
TJ = 175°C
TJ = 25°C
V
= 25V
DS
≤
60µs PULSE WIDTH
0.1
1 2 3 4 5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
)
A
(
10000
t
n
e
r
r
u
C
e
c
r
1000
u
o
S
o
t
n
i
a
r
100
D
,
D
I
TOP 15V
BOTTOM 2.5V
VGS
10V
8.0V
4.5V
3.5V
3.0V
2.7V
60µs PULSE WIDTH
≤
Tj = 175°C
2.5V
10
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
e
c
n
a
t
s
i
s
e
R
n
O
)
e
c
d
r
e
u
z
i
o
l
a
S
m
o
r
t
-
o
n
i
N
(
a
r
D
,
)
n
o
(
S
D
R
1.5
1.0
ID = 195A
V
= 10V
GS
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
100000
)
F
10000
p
(
e
c
n
a
t
i
c
a
p
a
C
1000
,
C
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
+ Cgd, C
gs
gd
+ C
ds
iss
C
rss
C
oss
C
iss
C
oss
C
rss
SHORTED
ds
gd
5.0
ID= 185A
4.5
)
V
(
4.0
e
g
a
3.5
t
l
o
V
3.0
e
c
r
u
2.5
o
S
o
t
2.0
e
t
a
1.5
G
,
S
1.0
G
V
VDS= 32V
VDS= 20V
0.5
100
1 10 100
VDS, Drain-to-Source Voltage (V)
0.0
0 20 40 60 80 100 120 140
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage
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