INFINEON IRL7833SPBF Datasheet

Applications

Absolute Maximum Ratings

V

Conti n uous Drai n Cur r e nt, V

@ 10V

Pulsed Drain Current

Maximum Power Dissipation

Thermal Resistance

Case-to-Sin k , Fl at, Greas ed Surfac e

Junction-t o- Ambien t (P CB Mount)

l High Frequency Synchronous Buck

Converters for Computer Processor Power

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification for Telecom and Consumer Use

l Lead-Free

Benefits

V

DSS

30V

PD - 95270

IRL7833PbF

IRL7833SPbF

IRL7833LPbF

HEXFET® Power MOSFET

R

DS(on)

3.8m

max

:

Qg

32nC

l Very Low RDS(on) at 4.5V V l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage

GS

and Current

Parameter Units

DS

V

GS

@ TC = 25°C

I

D

ID @ TC = 100°C I

DM

PD @TC = 25°C

@TC = 100°C

P

D

T

J

T

STG

R

JC

θ

R

CS

θ

R

JA

θ

R

JA

θ

Drain-to-Sour ce Voltage V Gate-to-Source Volt age

GS

Conti n uous Drai n Cur r e nt, V

c

Linear D er ating Factor W/°C Operating Junction and °C

Stor ag e Temperat ur e Ra ng e Mount ing Torque, 6-32 or M 3 s c r ew

@ 10V

GS

g g

Parameter Typ. Max. Units

Junction-to-Case ––– 1.04

Junction-to-Ambient

h

g

TO-220AB

IRL7833

D2Pak

IRL7833S

TO-262

IRL7833L

Max.

30

± 20

f

150

f

110

600 140

72

0.96

-55 to + 175

y

in (1.1Nym)

10 lbf

h

0.50 ––– °C/W ––– 62 ––– 40

A

W

Notes  through  are on page 12

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05/18/04

IRL7833/S/LPbF

S

D

G

BV

V

/∆T

R

m

V

/∆T

I

Q

QswSwitch Charge (Q

+ Qgd)

Q

t

C

Avalanche Characteristics

EASSingle Pul se Av a la nc h e Energ y

IARAvalanche Current

EARRepeti ti ve Avalanche Energy

Diode Characterist ics

I

V

t

Q

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

DSS

∆Β

DSS

DS(on)

GS(th)

∆

GS(th)

DSS

GSS

gfs Forward Tra nsconductance 150 ––– ––– S

g

gs1 gs2 gd godr

oss d(on) r d(off) f

iss

oss

rss

Drain-to-Sou r c e Br eakdown V ol t a ge 30 ––– ––– V Breakdown Voltag e Temp. Coefficient ––– 18 ––– mV/°C

J

Stat ic D r ai n- to-Sou rce On-Res i s tance ––– 3.1 3.8

––– 3.7 4.5 Gate Threshold Voltage 1.4 ––– 2.3 V Gate Th res hold Voltage Coe fficien t ––– -11 – –– mV/°C

J

Drain-to-Sou r c e Le akage Cur rent ––– ––– 1.0 µA

––– ––– 150 Gate-to-Sour c e Forward Lea k age ––– ––– 100 nA Gate-to-Sou rce Rever s e Le akage ––– ––– -100

Total Gate Charge ––– 32 47 Pre-Vth Gate-to-Source Charge ––– 8.7 ––– Post-Vth Gate-to-Source Charge ––– 5.1 ––– nC Gate-to-Drain Charge ––– 13 ––– Gate Cha r ge Ov e r dr i v e ––– 5.3 ––– See Fig. 16

gs2

––– 18 ––– Output Charge ––– 22 ––– nC Turn-On Delay Time ––– 18 ––– Rise Time ––– 50 ––– ns Turn-Off Delay Time ––– 21 ––– Fall Tim e ––– 6.9 –– – Input Capacitance ––– 4170 ––– Output Capacitance ––– 950 ––– pF Reverse Transfer Capacitance ––– 470 –––

Conditions

VGS = 0V, ID = 250µA Referen c e to 25°C, I

Ω

V

= 10V, ID = 38A

GS

V

= 4.5V, ID = 30A

GS

VDS = VGS, ID = 250µA

V

= 24V, VGS = 0V

DS

= 24V, VGS = 0V, TJ = 125°C

V

DS

V

= 20V

GS

= -20V

V

GS

= 15V, ID = 30A

V

DS

V

= 16V

DS

V

= 4.5V

GS

I

= 30A

D

= 16V, VGS = 0V

V

DS

= 15V, VGS = 4.5V

V

DD

ID = 26A Clampe d I n ductiv e Load

= 0V

V

GS

= 15V

V

DS

ƒ = 1.0MHz

= 1mA

D

f

S

SM

SD

rr

2 www.irf.com

Parameter Units

dh

c

c

Typ.

––– ––– –––

Paramet e r Min. Typ . Max. Units

Contin uous Source Current ––– ––– (Body Diode) A

Pulsed Source Current ––– ––– 600 (Body Diode)

ch

Diode Forward Voltage ––– ––– 1.2 V Reverse Recovery Time ––– 42 63 ns Reverse Recovery Charge ––– 34 51 nC

150

f

Max.

560

30 14

mJ

A

mJ

Conditions

MOSFET symbol showing the

integral reverse p-n junct ion diode.

TJ = 25°C, IS = 30A, VGS = 0V

= 25°C, IF = 30A, VDD = 15V

T

J

di/dt = 100A/µs

f

IRL7833/S/LPbF

1000

) A

(

t

n

e

r

100

r

u C e

c

r

u

o S

-

o

t

-

n

10

i

a

r D

,

D

I

2.7V

20µs PULSE WIDTH Tj = 25°C

1

0.1 1 10 100 1000

VDS, Drain-to-Source Voltage (V)

1000

)

Α

(

t

n

e

r

u C e

c

r

100

u

o S

-

o

t

-

n

i

a

r D

,

D

I

TJ = 25°C

TJ = 175°C

V

= 15V

DS

20µs PULSE WIDTH

10

2.0 3.0 4.0 5.0 6.0 7.0 8.0

VGS, Gate-t o-Source Vol tage (V)

TOP 10V

BOTTOM 2.7V

VGS

7.0V

4.5V

3.7V

3.5V

3.3V

3.0V

1000

) A

(

t

n

e

r

100

r

u C e

c

r

u

o S

-

o

t

-

n

10

i

a

r D

,

D

I

2.7V

20µs PULSE WIDTH Tj = 175°C

1

0.1 1 10 100 1000

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

e

c

n

a

t

s

i

s

e R n O e

c

r

u

o S

-

o

t

-

n

i

a

r D

,

)

n

o

( S D

R

ID = 75A V

= 10V

GS

1.5

)

d

e

z

i

l

a m

r

o N

(

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

TOP 10V

BOTTOM 2.7V

VGS

7.0V

4.5V

3.7V

3.5V

3.3V

3.0V

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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IRL7833/S/LPbF

100000

) F

10000

p

(

e

c

n

a

t

i

c

a

p

a C

,

1000

C

100

V

= 0V, f = 1 MHZ

GS

C

= C

+ Cgd, C

gs

gd

+ C

ds

iss

C

rss

C

oss

C

iss

C

oss

C

rss

1 10 100

VDS, Drain-to-Source Voltage (V)

SHORTED

ds

gd

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000.00

) A

(

100.00

t

n

e

r

u C n

i

a

r

10.00

D e

s

r

e

v

e R

,

1.00

D S

I

0.10

0.0 0.5 1.0 1.5 2.0 2.5 3.0

TJ = 25°C

VSD, Source-to-Drain Voltage (V)

TJ = 175°C

V

GS

= 0V

12.0 ID= 30A

)

10.0

V

( e

g

a

t

l

8.0

o V

e

c

r

u

6.0

o S

-

o

t

-

e

t

4.0

a G

,

S G

2.0

V

0.0 0 5 10 15 20 25 30 35 40

VDS= 24V VDS= 15V

Q

Total G ate Charge (nC)

G

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

) A

(

t

100

n

e

r

u C e

c

r

10

u

o S

-

o

t

-

n

i

a

r

1

D ,

Tc = 25°C

D

I

Tj = 175°C Single Pulse

0.1 1 10 100

OPERATION IN THIS AREA LIMITED BY RDS(on)

100µsec

1msec

10msec

VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

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INFINEON IRL7833SPBF Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual