INFINEON IRFZ44NSPBF Datasheet
PD - 95124
IRFZ44NSPbF
l Advanced Process Technology
l Surface Mount (IRFZ44NS)
l Low-profile through-hole (IRFZ44NL)
l 175°C Operating Temperature
l Fast Switching
IRFZ44NLPbF
HEXFET® Power MOSFET
D
V
DSS
= 55V
l Fully Avalanche Rated
l Lead-Free
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
2
The D
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRFZ44NL) is available for lowprofile applications.
2
Pak is suitable
G
S
R
DS(on)
2
D Pak
= 0.0175Ω
ID = 49A
TO-262
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 49
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 35 A
I
DM
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 94 W
V
GS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 160
Linear Derating Factor 0.63 W/°C
Gate-to-Source Voltage ± 20 V
Avalanche Current 25 A
Repetitive Avalanche Energy 9.4 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
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Junction-to-Case ––– 1.5
Junction-to-Ambient ––– 40 °C/W
3/18/04
IRFZ44NS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
E
AS
Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 17.5 mΩ VGS = 10V, ID = 25A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 19 ––– ––– S VDS = 25V, ID = 25A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 55V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 63 ID = 25A
Gate-to-Source Charge ––– ––– 14 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– ––– 23 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 12 ––– VDD = 28V
Rise Time ––– 60 ––– ID = 25A
Turn-Off Delay Time ––– 44 ––– RG = 12Ω
ns
Fall Time ––– 45 ––– VGS = 10V, See Fig. 10
Internal Source Inductance ––– 7.5 ––– nH Between lead,
and center of die contact
Input Capacitance ––– 1470 ––– VGS = 0V
Output Capacitance ––– 360 ––– VDS = 25V
Reverse Transfer Capacitance ––– 88 ––– pF ƒ = 1.0MHz, See Fig. 5
Single Pulse Avalanche Energy ––– 530 150 mJ I
= 25A, L = 0.47mH
AS
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
49
160
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 25A, VGS = 0V
Reverse Recovery Time ––– 63 95 ns TJ = 25°C, IF = 25A
Reverse Recovery Charge ––– 170 260 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting T
RG = 25Ω, I
= 25°C, L = 0.48mH
J
= 25A. (See Figure 12)
AS
I
≤ 25A, di/dt ≤ 230A/µs, V
SD
DD
≤ V
(BR)DSS
,
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
= 175°C .
J
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2 www.irf.com
D
S
IRFZ44NS/LPbF
A
A
A
A
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
100
10
D
I , Drain-to-Source Current (A)
4.5V
20µs PULSE WIDTH
T = 25°C
TJ = 25°C
1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
C
Fig 1. Typical Output Characteristics
1000
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
10
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
TJ = 175°C
T = 175°C
1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
C
Fig 2. Typical Output Characteristics
2.5
I = 41A
D
2.0
T = 25°C
100
10
D
I , Drain-to-Source Current (A)
1
45678 910
V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
J
T = 175°C
J
V = 25V
DS
20µs PULSE WIDTH
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperat ure ( °C)
J
Fig 4. Normalized On-Resistance
V = 10V
GS
Vs. Temperature
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IRFZ44NS/LPbF
A
A
A
A
2500
2000
1500
1000
V = 0V, f = 1MHz
GS
C = C + C , C SHORTED
iss gs gd ds
C = C
rss gd
C = C + C
oss ds gd
C
iss
C
oss
C, Capacitance (pF)
C
500
0
rss
1 10 100
V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
20
I = 25A
D
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
V = 44V
DS
V = 28V
DS
FOR TEST CIRCUIT
0
0 10203040506070
Q , Total Gate Charge (nC)
G
SEE FIGURE 13
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
T = 175°C
J
T = 25 °C
10
SD
I , Reverse Drain Current (A)
1
0.5 1.0 1.5 2.0 2.5 3.0
J
V = 0V
V , Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode
GS
100
10
D
I , Drain Current (A)
T = 25°C
C
T = 175°C
J
Single Pulse
1
1 10 100
V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
10µs
100µs
1ms
10ms
Forward Voltage
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