INFINEON IRFP7430PBF Instructions

Applications

R

DS(on)

typ.

1.0m

Ω

StrongIRFET

IRFP7430PbF

TM

l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits

l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies l OR-ing and redundant power switches l DC/DC and AC/DC converters

l DC/AC Inverters

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l RoHS Compliant, Halogen-Free*

Ordering Information

Base Part Number Package Type

D

G

V

max. 1.3mΩ I

S

GDS

Gate Drain Source

Standard Pack

Form Quantity

I

IRFP7430PbF

HEXFET® Power MOSFET

DSS

D

(Silicon Limited)

D

(Package Limited)

D

S

D

G

TO-247AC

Complete Part Number

40V

404A

195A

c

IRFP7430PbF TO-247 Tube 50 IRFP7430PbF

)

6.0

Ω

m (

e c n a

t s

i s e

4.0

R n O e

c

r u o S

o

t

2.0

n

i a

r D ,

) n o

( S D

0.0

R

4 6 8 10 12 14 16 18 20

V

Gate -to -Source Voltage (V)

GS,

TJ = 25°C

ID = 100A

TJ = 125°C

Fig 1. Typical On-Resistance vs. Gate Voltage

500

400

) A

( t n

300

e

r

r u

C n

i a

r

200

D ,

D

I

100

0

25 50 75 100 125 150 175

TC , Case Temperature (°C)

Limited By Package

Fig 2. Maximum Drain Current vs. Case Temperature

1

Δ

Ω

Absolute Maximum Ratings

θ

Symbol Parameter Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)

@ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)

I

D

I

@ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited)

D

I

DM

PD @TC = 25°C

Pulsed Drain Current

Maximum Power Dissipation

d

Linear Derating Factor

V

GS

T

J

T

STG

Gate-to-Source Voltage

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

E

AS (Thermally limited)

E

AS (Thermally limited)

I

AR

E

AR

Single Pulse Avalanche Energy

Avalanche Current

d

Repetitive Avalanche Energy

e

l

d

Thermal Resistance

Symbol Parameter Typ. Max. Units

R

JC

R

CS

R

JA

Junction-to-Case

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

k

j

IRFP7430PbF

Max.

404

c

286

c

195

1524

366

2.4

± 20

-55 to + 175

300

x

10lbf

in (1.1Nxm)

722

1405

See Fig. 14, 15, 22a, 22b

–––

0.24 –––

––– 40

0.41

A

W

W/°C

V

°C

mJ

A

mJ

°C/W

Static @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units

V

(BR )DSS

V

R

DS(on)

/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.014 ––– V/°C

(BR)DSS

Drain-to-Source Breakdown Voltage 40 ––– ––– V

Static Drain-to-Source On-Resistance ––– 1.0 1.3

1.2 –––

V

I

GS( th)

DSS

Gate Threshold Voltage 2.2 ––– 3.9 V

Drain-to-Source Leakage Current ––– ––– 1.0 μA

––– ––– 150

I

GSS

Gate-to-Source Forward Leakage ––– ––– 100 nA

Gate-to-Source Reverse Leakage ––– ––– -100

R

G

Internal Gate Resistance ––– 2.1 –––

Notes:

 Calculated continuous current based on maximum allowable junction

temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)

 Repetitive rating; pulse width limited by max. junction

temperature.

 Limited by T

RG = 50Ω, I

 I

≤ 100A, di/dt ≤ 990A/μs, V

SD

, starting TJ = 25°C, L = 0.14mH

Jmax

= 100A, VGS =10V.

AS

DD

≤ V

(BR)DSS

, TJ ≤ 175°C.

 Pulse width ≤ 400μs; duty cycle ≤ 2%.  C

eff. (TR) is a fixed capacitance that gives the same charging time

oss

as C

while V

oss

 C

eff. (ER) is a fixed capacitance that gives the same energy as

oss

C

while V

oss

DS

is rising from 0 to 80% V

DS

 When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended

footprint and soldering techniques refer to application note #AN-994.

 R

is measured at TJ approximately 90°C.

θ

 Limited by T

, starting TJ = 25°C, L= 1mH, RG = 50Ω, I

Jmax

VGS =10V.

* Halogen -Free since April 30, 2014

VGS = 0V, ID = 250μA

Reference to 25°C, I

m

VGS = 10V, ID = 100A

Ω

m

Ω

= 6.0V, ID = 50A

V

GS

VDS = VGS, ID = 250μA

= 40V, VGS = 0V

V

DS

= 40V, VGS = 0V, TJ = 125°C

V

DS

V

= 20V

GS

V

= -20V

GS

is rising from 0 to 80% V

DSS

.

Conditions

.

= 1.0mA

D

g

= 53A,

AS

d

2

Dynamic @ TJ = 25°C (unless otherwise specified)

Ω

Symbol Parameter Min. Typ. Max. Units

gfs Forward Transconductance 150 ––– ––– S

Q

t

d(on)

t

r

t

d(off)

t

f

C

g

gs

gd

sync

iss

oss

rss

oss

eff. (ER)

eff. (TR)

Total Gate Charge ––– 300 460 nC

Gate-to-Source Charge ––– 77 –––

Gate-to-Drain ("Miller") Charge ––– 98 –––

Total Gate Charge Sync. (Qg - Qgd) ––– 202 –––

Turn-On Delay Time ––– 32 ––– ns

Rise Time ––– 105 –––

Turn-Off Delay Time ––– 160 –––

Fall Time ––– 100 –––

Input Capacitance ––– 14240 ––– pF

Output Capacitance ––– 2130 –––

Reverse Transfer Capacitance ––– 1460 –––

Effective Output Capacitance (Energy Related)

Effective Output Capacitance (Time Related)

i

––– 2605 –––

h

––– 2920 –––

Diode Characteristics

Symbol Parameter Min. Typ. Max. Units

376

I

S

Continuous Source Current ––– –––

c

(Body Diode)

I

SM

V

SD

dv/dt

t

rr

Pulsed Source Current ––– ––– 1576 A

(Body Diode)

d

Diode Forward Voltage ––– 0.86 1.2 V

Peak Diode Recovery

f

––– 2.7 ––– V/ns

Reverse Recovery Time ––– 52 ––– ns TJ = 25°C VR = 34V,

––– 52 ––– T

Q

rr

Reverse Recovery Charge ––– 97 ––– nC TJ = 25°C

––– 97 ––– TJ = 125°C

I

RRM

Reverse Recovery Current ––– 2.3 ––– A TJ = 25°C

IRFP7430PbF

Conditions

V

= 10V, ID = 100A

DS

ID = 100A

V

=20V

DS

VGS = 10V

VDD = 20V

I

= 30A

D

= 2.7

R

G

V

GS

VGS = 0V

V

DS

ƒ = 1.0 MHz

V

GS

VGS = 0V, VDS = 0V to 32V

A

MOSFET symbol

showing the

integral reverse

p-n junction diode.

TJ = 25°C, IS = 100A, VGS = 0V

TJ = 175°C, IS = 100A, VDS = 40V

= 125°C IF = 100A

J

g

= 10V

g

= 25V

= 0V, VDS = 0V to 32V

Conditions

di/dt = 100A/μs

i h

D

G

S

g

3

IRFP7430PbF

1000

TOP 15V

) A

( t n e

r

100

r u

C e

c

r u o S

o

t

-

10

n

i a

r D

,

D

I

4.5V

≤

BOTTOM 4.5V

60μs PULSE WIDTH

Tj = 25°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 3. Typical Output Characteristics

1000

) A

( t

n e

r

100

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

10

TJ = 175°C

TJ = 25°C

V

DS

= 25V

≤60μs PULSE WIDTH

1.0 2 3 4 5 6 7

VGS, Gate-to-Source Voltage (V)

Fig 5. Typical Transfer Characteristics

VGS

10V

8.0V

7.0V

6.0V

5.5V

4.8V

1000

TOP 15V

) A

( t n e

r

r u

C e

c

r

100

u o S

o

t

n

i a

r D

,

D

I

4.5V

≤

BOTTOM 4.5V

60μs PULSE WIDTH

VGS

10V

8.0V

7.0V

6.0V

5.5V

4.8V

Tj = 175°C

10

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 4. Typical Output Characteristics

2.0

e c n a

t s

i s e

R n O e

c

r u o S

o

t

n

i a

r D

,

) n o

( S D

R

) d e z

i

l a

m

r o

N

(

1.8

1.6

1.4

1.2

1.0

0.8

ID = 100A

V

= 10V

GS

0.6

-60 -40 -20 0 20 40 60 80 100120140160180

TJ , Junction Temperature (°C)

Fig 6. Normalized On-Resistance vs. Temperature

100000

) F p

( e

c n a

t

i c a p a

C ,

C

4

V

= 0V, f = 1 MHZ

GS

C

= C

+ Cgd, C

gs

gd

+ C

ds

gd

iss

C

rss

C

oss

C

iss

10000

C

oss

C

rss

1000

1 10 100

VDS, Drain-to-Source Voltage (V)

SHORTED

14.0 ID= 100A

12.0

) V

( e

g

10.0

a

t

l o V

e

8.0

c

r u o S

-

6.0

o

t

e

t a

4.0

G ,

S G

V

2.0

VDS= 32V

VDS= 20V

0.0 0 50 100 150 200 250 300 350 400

QG, Total Gate Charge (nC)

Fig 8. Typical Gate Charge vs. Gate-to-Source VoltageFig 7. Typical Capacitance vs. Drain-to-Source Voltage

IRFP7430PbF

1000

) A

( t n e

r

r u

C n

i a

r D e

s

r e v e

R ,

D S

I

TJ = 175°C

100

10

TJ = 25°C

1

V

GS

0.1

0.0 0.5 1.0 1.5 2.0 2.5

VSD, Source-to-Drain Voltage (V)

= 0V

Fig 9. Typical Source-Drain Diode

) V

(

47

e g a

t

l o

46

V n w

o

45

d k a e

r B

44

e c

r u o

43

S

o

t

n

i

42

a

r D

,

S

41

S D

) R

40

B

(

V

-60 -40 -20 0 20 40 60 80 100120140160180

Forward Voltage

Id = 1.0mA

TJ , Temperature ( °C )

Fig 11. Drain-to-Source Breakdown Voltage

)

6.0

Ω

m (

e c n a

t s

i s e

R

4.0

n O e

c

r u o S

o

t

-

2.0

n

i a

r D ,

) n o

(

S D

0.0

R

0 200 400 600 800 1000 1200

VGS = 5.5V

VGS = 6.0V

V

= 7.0V

GS

VGS = 8.0V

VGS =10V

ID, Drain Current (A)

10000

) A

1000

( t n e

r

r u

C

100

e c

r u o S

o

t

n

i a

r D ,

D

I

Limited by package

10

1

Tc = 25°C Tj = 175°C Single Pulse

0.1

0.1 1 10 100

OPERATION IN THIS AREA LIMITED BY RDS(on)

1msec

VDS, Drain-toSource Voltage (V)

100μsec

10msec

DC

Fig 10. Maximum Safe Operating Area

2.5

VDS= 0V to 32V

2.0

)

1.5

J

μ

( y

g

r e n

1.0

E

0.5

0.0 0 5 10 15 20 25 30 35 40 45

V

Drain-to-Source Voltage (V)

DS,

Fig 12. Typical C

Stored Energy

OSS

Fig 13. Typical On-Resistance vs. Drain Current

5

IRFP7430PbF

1

W

/ C

° )

Z (

e s n o p s e

R l a

m

r e h T

C J h

t

0.001

0.1

0.01

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000

Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔTj = 150°C and

) A

( t n e

r

r u

C e

h c n a

l a v A

100

10

Tstart =25°C (Single Pulse)

Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25°C and

Tstart = 150°C.

1

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current vs.Pulsewidth

800

TOP Single Pulse

700

) J

m

600

( y

g

r e

500

n E

e h

400

c n a

l a

300

v A ,

R

200

A

E

BOTTOM 1.0% Duty Cycle ID = 100A

100

0

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

Fig 16. Maximum Avalanche Energy vs. Temperature

6

Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T

2. Safe operation in Avalanche is allowed as long asT

. This is validated for every part type.

jmax

is not exceeded.

jmax

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.

4. P

= Average power dissipation per single avalanche pulse.

D (ave)

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ΔT = Allowable rise in junction temperature, not to exceed T

(assumed as

jmax

25°C in Figure 14, 15). t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see Figures 13)

thJC

P

D (ave)

·f

av

= 1/2 ( 1.3·BV·Iav) = DT/ Z

I

2DT/ [1.3·BV·Zth]

av =

E

= P

AS (AR)

D (ave)·tav

thJC

IRFP7430PbF

4.0

) V

(

3.5

e g a

t

l o

3.0

V d

l o h s e

2.5

r h

t e

t a

G ,

) h

t

( S G

V

ID = 250μA

ID = 1.0mA

2.0

ID = 1.0A

1.5

1.0

-75 -50 -25 0 25 50 75 100 125 150 175

TJ , Temperature ( °C )

Fig 17. Threshold Voltage vs. Temperature

12

IF = 100A

VR = 34V

10

TJ = 25°C

TJ = 125°C

8

) A

(

6

M R R

I

4

12

IF = 60A

VR = 34V

10

TJ = 25°C

TJ = 125°C

8

) A

(

6

M R R

I

4

2

0

0 200 400 600 800 1000

diF /dt (A/μs)

Fig. 18 - Typical Recovery Current vs. dif/dt

300

IF = 60A

VR = 34V

250

TJ = 25°C

TJ = 125°C

)

200

C n

(

R R

Q

150

2

0

0 200 400 600 800 1000

diF /dt (A/μs)

260

220

)

180

C n

(

R R

Q

140

100

60

0 200 400 600 800 1000

100

50

0 200 400 600 800 1000

diF /dt (A/μs)

Fig. 20 - Typical Stored Charge vs. dif/dtFig. 19 - Typical Recovery Current vs. dif/dt

IF = 100A

VR = 34V

TJ = 25°C

TJ = 125°C

diF /dt (A/μs)

Fig. 21 - Typical Stored Charge vs. dif/dt

7

IRFP7430PbF

A





Reverse Recovery Current

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Current

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer

-

• dv/dt controlled by R

• Driver same type as D.U.T.

• I

controlled by Duty Factor "D"

SD

• D.U.T. - Device Under Test



G

+

V

DD

Re-Applied Voltage

+

-

Period

P.W.

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

V

15V

V

DS

L

DRIVER

t

p

(BR)DSS

R

G

20V

V

GS

Fig 22a. Unclamped Inductive Test Circuit

V

GS

R

G

10V

V

GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

D.U.T

I

AS

Ω

0.01

t

p

+

V

DD

-

I

AS

Fig 22b. Unclamped Inductive Waveforms

R

V

DS

D

V

DS

90%

D.U.T.

+

V

DD

-

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms

Current Regulator

Same Type as D.U.T.

.2μF

12V

V

GS

50KΩ

3mA

.3μF

D.U.T.

+

V

DS

-

Vds

Vgs(th)

Id

Vgs

I

G

Current Sampling Resistors

Fig 24a. Gate Charge Test Circuit

8

I

D

Qgs1

Qgs2 Qgd Qgodr

Fig 24b. Gate Charge Waveform

TO-247AC Package Outline

Dimensions are shown in millimeters (inches)

IRFP7430PbF

TO-247AC Part Marking Information

TO-247AC package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at

9

http://www.irf.com/package/

IRFP7430PbF

N/A

•

Qualification information

†

Industrial

Qualification level

(per JEDEC JESD47F

††

guidelines)

Moisture Sensitivity Level TO-247AC

(per JE DEC J-S T D-020D††)

RoHS compliant

Yes

 Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/

 Applicable version of JEDEC standard at the time of product release.

Revision History

Date Comment

Updated data sheet with new IR corporate template.

•

4/22/2014

2/19/2015

Updated package outline and part marking on page 9.

•

Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.

•

Updated E

•

Updated note 10 “Limited by T

= 1405mJ on page 2

AS (L =1mH)

, starting TJ = 25°C, L = 1mH, RG = 50Ω, IAS = 53A, VGS =10V”. on page 2

Jmax

10

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

IMPORTANT NOTICE

The information given in this document shall in no

event be regarded as a guarantee of conditions or

characteristics (“Beschaffenheitsgarantie”) .

With respect to any examples, hints or any typical

values stated herein and/or any information

regarding the application of the product, Infineon

Technologies hereby disclaims any and all

warranties and liabilities of any kind, including

without limitation warranties of non-infringement

of intellectual property rights of any third party.

In addition, any information given in this document

is subject to customer’s compliance with its

obligations stated in this document and any

applicable legal requirements, norms and

standards concerning customer’s products and any

use of the product of Infineon Technologies in

customer’s applications.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer’s technical departments

to evaluate the suitability of the product for the

intended application and the completeness of the

product information given in this document with

respect to such application.

For further information on the product, technology,

delivery terms and conditions and prices please

contact your nearest Infineon Technologies office

(

www.infineon.com

).

WARNINGS

Due to technical requirements products may

contain dangerous substances. For information on

the types in question please contact your nearest

Infineon Technologies office.

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

authorized representatives of Infineon

Technologies, Infineon Technologies’ products may

not be used in any applications where a failure of

the product or any consequences of the use thereof

can reasonably be expected to result in personal

injury.

INFINEON IRFP7430PBF Instructions

Specifications and Main Features

Frequently Asked Questions

User Manual