DIGITAL AUDIO MOSFET
VDS200VR
typ. @ 10V
80
m:Qg typ.
19
nC
Qsw typ.
6.8nCR
typ.
3.0
TJ max
150
°C
Absolute Maximum Ratings
V
ID @ TC = 100°C
Continuous Drain Current, V
@ 10V
Pulsed Drain Current
PD @TC = 25°C
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
T
Junction-to-Case
R
PD - 97252
IRFI4020H-117P
Features
Key Parameters
g
Integrated half-bridge package
Reduces the part count by half
DS(ON)
Facilitates better PCB layout
Key parameters optimized for Class-D
audio amplifier applications
Low R
for improved efficiency
DS(ON)
G(int)
Ω
Low Qg and Qsw for better THD and
improved efficiency
Low Qrr for better THD and lower EMI
Can delivery up to 300W per channel into
8Ω load in half-bridge configuration
amplifier
Lead-free package
TO-220 Full-Pak 5 PIN
G1, G2 D1, D2 S1, S2
Gate Drain Source
D1
G1
S1/D2
G2
S2
Description
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery,
and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors
such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and
reliable device for Class D audio amplifier applications.
V
DS
GS
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
I
DM
@TC = 100°C
P
D
E
AS
J
T
STG
Thermal Resistance
R
θ
JC
θJA
www.irf.com 1
g
Parameter Units
Drain-to-Source Voltage V
Gate-to-Source Voltage
GS
c
f
f
Linear Derating Factor W/°C
d
Operating Junction and °C
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting torque, 6-32 or M3 screw
Max.
200
±20
9.1
5.7
36
21
8.5
0.17
130
-55 to + 150
300
10lbxin (1.1Nxm)
A
W
mJ
g
Parameter Typ. Max. Units
f
Junction-to-Ambient (free air) ––– 65
––– 5.9 °C/W
08/22/06
IRFI4020H-117P
S
D
V
/∆T
mΩV
I
I
g
Q
Q
QswSwitch Charge (Q
+ Qgd)
t
t
C
C
L
L
Diode Characteristics
IS @ TC = 25°C
I
V
Q
Electrical C haract eristics @ TJ = 25°C (unless o therwi se specified)
Parameter Min. Typ. Max. Units
BV
∆Β
R
∆V
DSS
GSS
Q
R
d(on)
t
r
d(off)
t
f
C
C
fs
D
S
DSS
DSS
DS(on)
GS(th)
GS(th)
g
gs1
Q
gs2
gd
Q
godr
G(int)
iss
oss
rss
eff.
oss
/∆T
Drain-to-Source Breakdown Voltage 200 ––– ––– V
Breakdown Voltage Temp. Coefficient ––– 24 ––– mV/°C
J
Static Drain-to-Source On-Resistance ––– 80 100
Gate Threshold Voltage 3.0 ––– 4.9 V
Gate Threshold Voltage Coefficient ––– -12 ––– mV/°C
J
Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
Forward Transconductance 11 ––– ––– S
Total Gate Charge ––– 19 29
Pre-Vth Gate-to-Source Charge ––– 4.9 –––
Post-Vth Gate-to-Source Charge ––– 0.95 ––– nC
Gate-to-Drain Charge ––– 5.8 –––
Gate Charge Overdrive ––– 7.4 ––– See Fig. 6 and 15
gs2
Internal Gate Resistance ––– 3.0 –––
––– 6.8 –––
Ω
Turn-On Delay Time ––– 8.4 –––
Rise Time ––– 8.0 –––
Turn-Off Delay Time ––– 18 ––– ns
Fall Time ––– 4.0 –––
Input Capacitance ––– 1240 –––
Output Capacitance ––– 130 ––– pF
Reverse Transfer Capacitance ––– 28 –––
Effective Output Capacitance ––– 110 –––
Internal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
Internal Source Inductance ––– 7.5 ––– from package
g
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
V
= 10V, ID = 5.5A
GS
VDS = VGS, ID = 100µA
V
= 200V, VGS = 0V
DS
VDS = 200V, VGS = 0V, TJ = 125°C
= 20V
V
GS
V
= -20V
GS
VDS = 50V, ID = 5.5A
VDS = 100V
= 10V
V
GS
ID = 5.5A
V
= 100V, VGS = 10V
DD
I
= 5.5A
D
RG = 2.4Ω
V
= 0V
GS
VDS = 25V
ƒ = 1.0MHz, See Fig.5
V
= 0V, VDS = 0V to 160V
GS
and center of die contact
e
e
G
SM
SD
t
rr
rr
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
= 25°C, L = 8.6mH, RG = 25Ω, I
J
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R
is measured at T
θ
Specifications refer to single MosFET.
2 www.irf.com
g
Parame t e r Min. Typ . Ma x . Unit s
Continuous Source Current ––– ––– 9.1
(Body Diode) A
Pulsed Source Current ––– ––– 36
(Body Diode)
Diode Forward Voltage ––– ––– 1.3 V
Reverse Recovery Time ––– 76 110 ns
Reverse Recovery Charge ––– 230 350 nC
of approximately 90°C.
J
c
AS
= 5.5A.
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
= 25°C, IS = 5.5A, VGS = 0V
T
J
TJ = 25°C, IF = 5.5A, VDD = 160V
di/dt = 100A/µs
e
e
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