INFINEON IRFHS9351pbf Instructions

Pulsed Drain Current

c

Power Dissipation

f

Power Dissipation

f

D2

3

G1 2

S1 1

4S2

5G2

6D1

TOP VIEW

D1

D2

FET1

FET2

IRFHS9351PbF

DSon

Ω)

≤

HEXFET® Power MOSFET

V

DS

V

GS max

R

DS(on) max

(@VGS = -10V)

I

D

(@TC = 25°C)

-30 V

±20 V

170

-3.4

d

m

Ω

A

2mm x 2mm Dual PQFN

Applications

l Charge and Discharge Switch for Battery Application l System/load switch

Features and Benefits

Features Benefits

Low R

Low Thermal Resistance to PCB (

Low Profile (

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification Increased Reliability

(≤ 170m

19°C/W) Enable better thermal dissipation

1.0 mm) results in Increased Power Density

Lower Conduction Losses

Easier Manufacturing

Environmentally Friendlier

S2

G2

D1

D2

S1

G1

D2

Absolute Maximum Ratings

V

DS

V

GS

@ TA = 25°C Continuous Drain Current, VGS @ -10V

I

D

I

@ TA = 70°C Continuous Drain Current, VGS @ -10V

D

I

@ TC = 25°C Continuous Drain Current, VGS @ -10V

D

I

@ TC = 70°C Continuous Drain Current, VGS @ -10V

D

@ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)

I

D

I

DM

PD @TA = 25°C

PD @ TA = 70°C

T

J

T

STG

Notes  through  are on page 2

Orderable part number Package Type

IRFHS9351TRPBF PQFN 2mm x 2mm Tape and Reel 4000

IRFHS9351TR2PBF

PQFN 2mm x 2mm Tape and Reel 400 EOL notice # 259

Standard Pack

Form Quantity

Parameter Units

Drain-to-Source Voltage

Gate-to-Source Voltage

Linear Derating Factor W/°C Operating Junction and

Storage Temperature Range

-55 to + 150

Max.

-30

± 20

-2.3

-1.5

-5.1

-4.1

-3.4

-20

1.4

0.9

0.01

d d d

Note

V

A

W

°C

Static @ TJ = 25°C (unless otherwise specified)

JA

Parameter Min. Typ. Max. Units

BV

DSS

V

DSS/TJ

R

DS(on)

V

GS(th )

V

GS(th)

I

DSS

I

GSS

gfs Forward Transconductance 2.4 ––– – –– S

Q

g

Q

g

Q

gs

Q

gd

R

G

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Brea kdown Voltage -30 ––– ––– V

Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C

Sta ti c D ra in -to -S ou rc e On -R e sista n ce

––– 135 1 70

––– 235 2 90

m

Gate T h re sh old Volt age -1. 3 -1.8 - 2.4 V

Gate Th reshold Voltage Coefficient ––– -4.6 ––– mV/°C

Drain-to-Source Leakag e Current ––– ––– -1.0

––– ––– -150

Gate-to-Source Forward Leakage ––– ––– -100

Gate-to-Source Re verse Leakage ––– ––– 1 00

Total Gate Charge

h h

Gate-to-Source Ch arge

Gate-to-Drain Ch arge

Ga t e R esis tan ce

h

––– 1. 9 ––– n C VDS = -15V,VGS = -4.5 V,ID = - 3.1A

––– 3. 7 –––

––– 0. 6 –––

––– 1. 1 –––

––– 17 –––

μA

nA

nC

Turn-On Delay Time ––– 8.3 –––

Rise Time ––– 30 –––

Turn-Off Delay Time ––– 6.3 –––

Fall Time ––– 7.9 –––

Input Ca pacitance ––– 160 – ––

Output Capacitance ––– 39 –––

Reverse Transfe r Capacitance ––– 26 –––

IRFHS9351PbF

Conditions

VGS = 0V, ID = -250μA

Reference to 25° C, I

V

= -10V, ID = -3.1A

GS

VGS = -4.5V, ID = -2.5 A

VDS = VGS, ID = -10μA

V

= -24V, VGS = 0 V

DS

V

= -24V, VGS = 0 V, TJ = 125°C

DS

= -20V

V

GS

V

= 20V

GS

= -10V, ID = -3.1A

V

DS

V

= -10V

GS

V

= -15 V

DS

I

= -3.1A

D

= -15V, VGS = -4.5V

V

DD

ID = -3.1A

ns

R

= 1 .8

G

See Figs. 19a & 19b

V

= 0V

GS

V

pF

= -25 V

DS

ƒ = 1.0KHz

= -1mA

D

e

Diode Characteristics

Parameter Min. Typ. Max. Units

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current

(Body Diode)

Pulsed Sou rce Curr ent

(Body Diode)

c

Diode Forward V oltage ––– ––– -1.2 V

Reverse Recov e ry Time ––– 20 30 n s

Reverse Recove ry Ch arge ––– 42 63 n C

Thermal Resistance

Par ameter Units

RJC (Bottom)

RJC (To p)

R

JA

Junction-to-Case

Junction-to-Ambient

Junction-to-Ambient (t<10s)

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.  Current limited by package. .  Pulse width ≤ 400μs; duty cycle ≤ 2%.

 When mounted on 1 inch square copper board.

 R

is measured at TJ of approximately 90°C.

θ

 For DESIGN AID ONLY, not subject to production testing.

.

g g

f

––– –––

-5.1

-20

MOSFET symbol

showing the

A

inte gr al re ve rse

p-n junction diode.

TJ = 25 °C, IS = -3.1 A, VGS = 0V

= 25 °C, IF = -3.1A, VDD = -15V

T

J

di/dt = 370/μs

Typ.

–––

Max.

19

––– 170

90

–––

75

Conditions

D

G

S

e

°C/ W

IRFHS9351PbF

100

) A

( t n e

r

10

u C e

c

r u o S

o

t

n

i

1

a

r D

,

D

I

-

-2.8V

0.1

≤60μs PULSE WIDTH

Tj = 25°C

TOP -10V

BOTTOM -2.8V

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

) A

(

t n e

r

10

u C e

c

r u o S

o

t

n

i a

r D

,

D

I

-

0.1

TJ = 150°C

1

TJ = 25°C

V

= -15V

DS

60μs PULSE WIDTH

≤

1 2 3 4 5 6 7 8

-VGS, Gate-to-Source Voltage (V)

VGS

-8.0V

-5.0V

-4.5V

-3.5V

-3.3V

-3.0V

100

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

-

TOP -10V

10

BOTTOM -2.8V

1

0.1

VGS

-8.0V

-5.0V

-4.5V

-3.5V

-3.3V

-3.0V

-2.8V

60μs

≤

Tj = 150°C

PULSE WIDTH

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1.6

e c n a

t s

i s e

R n O

)

e

d

c

r

e

u

z

i

l

o

a

S

-

m

o

r

t

-

o

n

N

i

(

a

r D

,

) n o

( S D

R

ID = -3.1A

V

= -10V

1.4

GS

1.2

1.0

0.8

0.6

-60 -40 -20 0 20 40 60 80 100 120 140160

TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics

1000

) F p

( e

c n a

t

i

100

c a p a

C ,

C

10

V

= 0V, f = 1 KHZ

GS

C

= C

C

iss

rss

oss

= C

gs

gd

ds

C

iss

C

oss

C

rss

+ Cgd, C

+ C

SHORTED

ds

gd

1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

Fig 4. Normalized On-Resistance vs. Temperature

14

)

ID= -3.1A

12

V

( e

g a

t

10

l o V

e c

8

r u o S

o

6

t

e

t a

G

4

,

S G

V

-

2

VDS= -24V

VDS= -15V

0

012345

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

IRFHS9351PbF

100

) A

( t n e

r

10

u C n

i a

r D e

s

r e v e

1

R ,

D S

I

-

0.1

0.4 0.6 0.8 1.0 1.2 1.4

TJ = 150°C

TJ = 25°C

V

= 0V

GS

-VSD, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

6

5

) A

(

4

t n e

r

r u

C

3

n

i a

r D

,

2

D

I

1

0

25 50 75 100 125 150

TC , CaseTemperature (°C)

Fig 9. Maximum Drain Current vs.

Case Temperature

100

) A

( t n

10

e

r

r u

C e

c

r u o

1

S

o

t

n

i a

r D

0.1

,

D

I

-

Tc = 25°C Tj = 150°C Single Pulse

0.01

0.1 1 10 100

OPERATION IN THIS AREA LIMITED BY RDS(on)

DC

100μsec

10msec

1msec

VDS, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

2.5

) V

( e

g a

2.0

t

l o V

d

l o h s e

1.5

r h

t e

t a

G ,

) h

t

1.0

( S G

V

-

0.5

-75 -50 -25 0 25 50 75 100 125 150

TJ , Temperature ( °C )

ID = -10uA

Fig 10. Threshold Voltage vs. Temperature

)

C

10

J h

t Z (

e s n o p s e

R l a

m

r e h T

0.01

D = 0.50

0.20

0.10

1

0.1

1E-006 1E-005 0.0001 0.001 0.01 0.1

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRFHS9351PbF

)

500

Ω

m (

e c n a

t s

i

400

s e

R n O e

c

r

300

u o S

o

t

n

i a

r

200

D ,

) n o

( S D

R

100

TJ = 25°C

TJ = 125°C

ID = -3.1A

0 5 10 15 20 25

-V

Gate -to -Source Voltage (V)

GS,

Fig 12. On-Resistance vs. Gate Voltage

400

300

)

500

Ω

(

m e

c n a

t s

i

400

s e

R n O e

c

r

300

u o S

o

t

n

i a

r

200

D ,

) n o

(

S D

R

100

Vgs = -4.5V

Vgs = -10V

0 2 4 6 8

-ID, Drain Current (A)

Fig 13. Typical On-Resistance vs. Drain Current





+

R

-

G

D.U.T *

) W

( r

200

e w

o P

100

0

1E-5 1E-4 1E-3 1E-2 1E-1 1E+0

Fig 14. Typical Power vs. Time

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

• di/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

Time (sec)

Driver Gate Drive

P.W.

D.U.T. ISDWaveform

Reverse Recovery

+

V

DD

+

-

Current

Re-Applied Voltage

D.U.T. VDSWaveform

Inductor Current

Inductor Curent

Period

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

* V

= 5V for Logic Level Devices

* Reverse Polarity of D.U.T for P-Channel

GS

Fig 15. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs

IRFHS9351PbF

A

(BR)

0

20K

1K

DUT

Fig 16a. Gate Charge Test Circuit

R

-V

-20V

V

DS

G

GS

t

p

D.U.T

I

AS

L

0.01

DRIVER

Ω

Id

Vgs

Vds

L

VCC

Vgs(th)

Qgs1

Qgs2QgdQgodr

Fig 16b. Gate Charge Waveform

I

AS

V

DD

15V

Fig 17a. Unclamped Inductive Test Circuit

R

V

DS

V

GS

R

G

-V

GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

D

D.U.T.

t

p

V

DSS

Fig 17b. Unclamped Inductive Waveforms

t

d(on)tr

V

GS

10%

-

V

+

DD

90%

V

DS

t

d(off)tf

Fig 18a. Switching Time Test Circuit

Fig 18b. Switching Time Waveforms

PQFN Package Details

IRFHS9351PbF

PQFN Part Marking

9351

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

PQFN Tape and Reel

IRFHS9351PbF

CORE

TAPE

Remark:

- Dimension ab ove are typical dimensions.

- Cover tape thickn ess is 0.048mm +/- 0.005mm.

- Surface resistivit y 10E5 < Rs <10 E9.

Table 2:

COVER TAPE

(WIDTH)

5.4 mm

9.5 mm

Width

TOLERANCE

+/- 0. 1 mm

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

IRFHS9351PbF

Revision History

5/21/2014

•

Updated qual level from "Consumer" to "Industrial" on page 1 & 9.

Qualificat ion information

Qualific ation level

Moisture Sensitivity Level

RoHS c o mpli ant Yes

†

Industrial

(per JEDEC JESD47F

PQFN 2mm x 2mm

††

†††

guidelines )

MS L 1

(per I PC/JE DE C J-S T D-020 D

†††

)

 Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability

 Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information:

http://www.irf.com/whoto-call/salesrep/

 Applicable version of JEDEC standard at the time of product release.

Date Comment

•

5/13/2014

Updated ordering information to reflect the End-Of-life (EOL) of the mini-r eel option (EOL notice #259)

• Updated data sheet based on corporate template.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

IMPORTANT NOTICE

The information given in this document shall in no

event be regarded as a guarantee of conditions or

characteristics (“Beschaffenheitsgarantie”) .

With respect to any examples, hints or any typical

values stated herein and/or any information

regarding the application of the product, Infineon

Technologies hereby disclaims any and all

warranties and liabilities of any kind, including

without limitation warranties of non-infringement

of intellectual property rights of any third party.

In addition, any information given in this document

is subject to customer’s compliance with its

obligations stated in this document and any

applicable legal requirements, norms and

standards concerning customer’s products and any

use of the product of Infineon Technologies in

customer’s applications.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer’s technical departments

to evaluate the suitability of the product for the

intended application and the completeness of the

product information given in this document with

respect to such application.

For further information on the product, technology,

delivery terms and conditions and prices please

contact your nearest Infineon Technologies office

(

www.infineon.com

).

WARNINGS

Due to technical requirements products may

contain dangerous substances. For information on

the types in question please contact your nearest

Infineon Technologies office.

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

authorized representatives of Infineon

Technologies, Infineon Technologies’ products may

not be used in any applications where a failure of

the product or any consequences of the use thereof

can reasonably be expected to result in personal

injury.

INFINEON IRFHS9351pbf Instructions

Specifications and Main Features

Frequently Asked Questions

User Manual