Absolute Maximum Ratings
GS
D
D
D
D
D
DM
Pulsed Drain Current
c
Power Dissipation
f
Power Dissipation
f
Linear Derating Factor
W/°C
J
STG
G 3
S
D2
D1
4S
5D
6D
TOP VIEW
D
g (typical)
IRFHS8242PbF
IRFHS8242TR2PbF
PQFN 2mm x 2mm
Tape and Reel
400
EOL notice # 259
Standar d Pack
DSon
≤
≤
HEXFET® Power MOSFET
V
DS
V
GS max
R
DS(on) max
(@VGS = 10V)
Q
25 V
20 V
±
13.0
m
4.3 nC
Ω
( @ VGS = 4.5V)
I
(@T
c(Bottom)
D
= 25°C)
8.5
d
A
2mm x 2mm PQFN
Applications
• System/Load Switch
Features and Benefits
Features Resulting Benefits
Low R
Low Thermal Resistance to PCB (
Low Profile (
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification Increased Reliability
(≤ 13.0mΩ) Lower Conduction Losses
13°C/W) Enable better thermal dis sipation
1.0 mm) results in Increased Power Density
Easier Manufacturing
Environmentally Friendlier
D
D
D
D
D
S
G
S
Orderable part number Package Type
IRFHS8242TRPbF PQFN 2mm x 2mm Tape and Reel 4000
V
DS
V
@ TA = 25°C
I
I
@ TA = 70°C
I
I
I
I
PD @TA = 25°C
PD @TA = 70°C
T
T
@ T
@ T
@ T
C(Bottom)
C(Bottom)
C(Bottom)
= 25°C
= 70°C
= 25°C
Notes through are on page 2
1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013
Parameter Units
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
f
Operating Junction and
Storage Temperature Range
@ 10V
GS
@ 10V
GS
@ 10V
GS
@ 10V
GS
@ 10V (Package Limited)
GS
Form Quantity
-55 to + 150
Max.
25
±20
d
9.9
8.0
d
21
d
17
d
8.5
84
2.1
1.3
0.02
Note
V
A
W
°C
Static @ TJ = 25°C (unless otherwise specified)
ΔΒ
Δ
Total Gate Charge
h
Total Gate Charge
h
Gate-to-Source Charge
h
Gate-to-Drain Charge
h
–––
Diode Characteristics
(Body Diode)
Thermal Resistance
θ
JC
Junction-to-Case
g
R
θ
JC
(Top)
Junction-to-Case
g
–––
90
θ
JA
Junction-to-Ambient
f
R
θ
JA
Junction-to-Ambient (<10s)
f
–––
42
Parameter Min. Typ. Max. Units
BV
DSS
V
/ΔT
DSS
J
R
DS(on)
V
GS(th)
V
GS(th)
I
DSS
I
GSS
gfs Forward Transconductance 19 ––– ––– S
Q
g
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 25 ––– ––– V
Breakdown Voltage Temp. Coefficient ––– 18 ––– mV/°C
Static Drain-to-Source On-Resistance ––– 10.0 13.0
––– 17.0 21.0
m
Gate Threshold Voltage 1.35 1.8 2.35 V
Gate Threshold Voltage Coefficient ––– -6.8 ––– mV/°C
Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 150
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
––– 4.3 ––– nC
––– 10.4 –––
––– 1.8 –––
––– 1.6 –––
Gate Resistance ––– 1.9
Turn-On Delay Time ––– 6.5 –––
Rise Time ––– 19 –––
Turn-Off Delay Time ––– 5.4 –––
Fall Time ––– 5.3 –––
Input Capacitance ––– 653 –––
Output Capacitance ––– 171 –––
Reverse Transfer Capacitance ––– 78 –––
IRFHS8242PbF
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, I
= 10V, ID = 8.5A
V
GS
Ω
= 4.5V, ID = 6.8A
V
GS
V
= VGS, ID = 25μA
DS
V
= 20V, VGS = 0V
DS
μA
VDS = 20V, VGS = 0V, TJ = 125°C
V
= 20V
GS
nA
nC V
Ω
ns
pF
= -20V
V
GS
V
= 10V, ID = 8.5A
DS
VGS = 4.5V, VDS = 13V, ID = 8.5A
= 13V
V
DS
= 10V
GS
= 8.5Ad (See Fig. 6 & 16)
I
D
= 13V, VGS = 4.5V
V
DD
d
= 8.5A
I
D
RG=1.8Ω
See Fig.17
VGS = 0V
= 10V
V
DS
ƒ = 1.0MHz
= 1mA
D
ed
e
d
e
d
Parameter Min. Typ. Max. Units
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
c
Diode Forward Voltage ––– ––– 1.0 V
Reverse Recovery Time ––– 11 17 ns
Reverse Recovery Charge ––– 11 17 nC
Forward Turn-On Time Time is dominated by parasitic Inductance
Parameter Typ. Max. Units
(Bottom)
R
R
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Current limited by package.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
R
is measured at T
θ
of approximately 90°C.
J
For DESIGN AID ONLY, not subject to production testing.
––– ––– 8.5
––– ––– 84
d
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
TJ = 25°C, IS = 8.5Ad, VGS = 0V
T
di/dt = 280 A/μs
––– 13
––– 60
Conditions
G
= 25°C, IF = 8.5Ad, VDD = 13V
J
e
D
S
e
°C/W
2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013
IRFHS8242PbF
100
TOP 10V
)
A
(
10
t
n
e
r
r
u
C
e
c
r
1
u
o
S
o
t
n
i
a
r
0.1
D
,
D
I
2.7V
BOTTOM 2.7V
60μs PULSE WIDTH
≤
Tj = 25°C
0.01
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
)
A
(
t
n
e
r
r
u
C
e
c
r
u
o
S
o
t
n
i
a
r
D
,
I
TJ = 150°C
TJ = 25°C
10
D
V
= 15V
DS
≤
60μs PULSE WIDTH
1.0
2.0 3.0 4.0 5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
VGS
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
100
TOP 10V
)
A
(
t
n
e
r
10
r
u
C
e
c
r
u
o
S
o
t
-
1
n
i
a
r
D
,
D
I
2.7V
60μs PULSE WIDTH
≤
BOTTOM 2.7V
Tj = 150°C
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
e
c
n
a
t
s
i
s
e
R
n
O
e
c
r
u
o
S
o
t
n
i
a
r
D
,
)
n
o
(
S
D
R
ID = 8.5A
V
= 10V
1.6
GS
1.4
)
d
e
z
i
l
1.2
a
m
r
o
N
(
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120140 160
TJ , Junction Temperature (°C)
VGS
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
Fig 3. Typical Transfer Characteristics
10000
)
F
p
(
e
c
n
a
t
i
c
a
p
a
C
,
C
1000
100
10
V
= 0V, f = 1 MHZ
GS
C
= C
C
C
iss
rss
oss
= C
= C
C
C
C
gs
gd
ds
iss
oss
rss
+ Cgd, C
+ C
SHORTED
ds
gd
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
14.0
ID= 8.5A
12.0
)
V
(
e
g
10.0
a
t
l
o
V
e
8.0
c
r
u
o
S
-
6.0
o
t
e
t
a
4.0
G
,
S
G
V
2.0
VDS= 20V
VDS= 13V
VDS= 5.0V
0.0
024681012
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013
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