Absolute Maximum Ratings
GS
D
D
D
D
D
DM
Pulsed Drain Current
c
Power Dissipation
g
Power Dissipation
g
Linear Derating Factor
W/°C
J
STG
V
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
DS
V
gs max
R
DS(on) max
(@VGS = 10V)
(@VGS = 4.5V)
30 V
± 20
4.1
6.3
m
IRFH8324PbF
HEXFET® Power MOSFET
V
Ω
(@T
Q
g typ.
I
c(Bottom)
D
= 25°C)
14 nC
50
i
PQFN 5X6 mm
A
Applications
• Synchronous MOSFET for high frequency buck converters
Features and Benefits
Features Benefits
Low Thermal Resistance to PCB (< 2.3°C/W) Enable better thermal diss ipation
Low Profile (<1.2mm) results in Increased Power Density
Industry-Standard Pinout
⇒
MSL1, Consumer Qualification Increased Reliability
Orderable part number Package Type Standard Pack
Form Quantity
IRFH8324TRPBF PQFN 5mm x 6mm Tape and Reel 4000
IRFH8324TR2PBF
PQFN 5mm x 6mm Tape and Reel 400 EOL notice #259
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Note
Parameter Units
V
DS
V
@ TA = 25°C
I
I
@ TA = 70°C
I
@ T
C(Bottom)
I
@ T
C(Bottom)
I
@ TC = 25°C
I
PD @TA = 25°C
PD @T
C(Bottom)
T
T
= 25°C
= 100°C
= 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
g
Operating Junction and
Storage Temperature Range
@ 10V
GS
@ 10V
GS
@ 10V
GS
@ 10V
GS
@ 10V (Package Limited)
GS
Notes through are on page 9
1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 2015
Max.
30
± 20
23
18
hi
90
hi
57
i
50
200
3.6
54
0.029
-55 to + 150
V
A
W
°C
Thermal Resistance
Junction-to-Case
f
Junction-to-Case
Junction-to-Ambient
g
Junction-to-Ambient
Static @ TJ = 25°C (unless otherwise specified)
ΔΒ
Δ
–––
Avalanche Characteristics
Single Pulse Avalanche Energy
d
Avalanche Current
c
Diode Characteristics
(Body Diode)
Parameter Min. Typ. Max. Units
BV
DSS
V
/ΔT
DSS
J
R
DS(on)
V
GS(th)
V
GS(th)
I
DSS
I
GSS
gfs Forward Transconductance 72 ––– ––– S
Q
g
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 30 ––– ––– V
Breakdown Voltage Temp. Coefficient ––– 0.019 ––– V/°C
Static Drain-to-Source On-Resistance ––– 3.3 4.1
––– 5.0 6.3
mΩ
Gate Threshold Voltage 1.35 1.8 2.35 V VDS = VGS, ID = 50μA
Gate Threshold Voltage Coefficient ––– -6.2 ––– mV/°C
Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 150
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
Total Gate Charge ––– 31 ––– nC
Total Gate Charge ––– 14 –––
Pre-Vth Gate-to-Source Charge ––– 4.4 –––
Post-Vth Gate-to-Source Charge ––– 2.2 –––
Gate-to-Drain Charge ––– 3.5 –––
Gate Charge Overdrive ––– 3.9 –––
Switch Charge (Q
gs2
+ Qgd)
––– 5.7 –––
Output Charge ––– 13 ––– nC
Gate Resistance ––– 1.1
Turn-On Delay Time ––– 13 –––
Rise Time ––– 26 –––
Turn-Off Delay Time ––– 14 –––
Fall Time ––– 8.5 –––
Input Capacitance –––
Output Capacitance –––
Reverse Transfer Capacitance –––
2380
500
205
–––
–––
–––
IRFH8324PbF
VGS = 0V, ID = 250μA
Reference to 25°C, I
= 10V, ID = 20A
V
GS
= 4.5V, ID = 16A
V
GS
VDS = 24V, VGS = 0V
μA
V
= 24V, VGS = 0V, TJ = 125°C
DS
= 20V
V
GS
nA
nC
Ω
ns
pF
= -20V
V
GS
= 10V, ID = 20A
V
DS
= 10V, VDS = 15V, ID = 20A
V
GS
= 15V
V
DS
VGS = 4.5V
I
= 20A
D
V
= 16V, VGS = 0V
DS
= 15V, VGS = 4.5V
V
DD
= 20A
I
D
Ω
=1.8
R
G
= 0V
V
GS
= 10V
V
DS
ƒ = 1.0MHz
Conditions
= 1.0mA
D
e
e
E
AS
I
AR
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
R
θJC
R
θJC
R
θJA
R
θJA
(Bottom)
(Top)
(<10s)
Parameter Units
Typ.
–––
–––
Parameter Min. Typ. Max. Units
Continuous Source Current
(Body Diode)
Pulsed Source Current
c
––– ––– 50
––– ––– 200
i
Diode Forward Voltage ––– ––– 1.0 V
Reverse Recovery Time ––– 16 24 ns
Reverse Recovery Charge ––– 25 38 nC
Forward Turn-On Time Time is dominated by parasitic Inductance
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
TJ = 25°C, IS = 20A, VGS = 0V
T
= 25°C, IF = 20A, VDD = 15V
J
di/dt = 360 A/μs
Parameter Typ. Max. Units
–––
f
–––
–––
g
–––
Max.
94
20
Conditions
e
2.3
32
35
23
mJ
A
D
G
S
e
°C/W
2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 2015
IRFH8324PbF
1000
TOP 10V
)
A
(
100
t
n
e
r
r
u
C
e
c
r
10
u
o
S
o
t
n
i
a
r
1
D
,
D
I
2.5V
≤
BOTTOM 2.5V
60μs PULSE WIDTH
Tj = 25°C
0.1
0.1 1 10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
)
A
(
t
n
e
r
100
r
u
C
e
c
r
u
o
S
o
t
n
10
i
a
r
D
,
D
I
TJ = 25°C
1.0
1 2 3 4 5 6 7 8
VGS, Gate-to-Source Voltage (V)
TJ = 150°C
V
= 15V
DS
≤
60μs PULSE WIDTH
VGS
7.0V
5.0V
4.5V
3.5V
3.0V
2.8V
1000
TOP 10V
)
A
(
t
n
e
r
100
r
u
C
e
c
r
u
o
S
o
t
-
10
n
i
a
r
D
,
D
I
2.5V
≤
BOTTOM 2.5V
60μs PULSE WIDTH
Tj = 150°C
1
0.1 1 10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
e
c
n
a
t
s
i
s
e
R
n
O
e
c
r
u
o
S
o
t
n
i
a
r
D
,
)
n
o
(
S
D
R
ID = 20A
V
= 10V
GS
1.6
1.4
)
d
e
z
i
l
1.2
a
m
r
o
N
(
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120140 160
TJ , Junction Temperature (°C)
VGS
7.0V
5.0V
4.5V
3.5V
3.0V
2.8V
Fig 3. Typical Transfer Characteristics
10000
)
F
p
(
e
c
n
a
t
i
c
a
p
a
C
,
C
1000
100
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
+ Cgd, C
gs
gd
+ C
ds
iss
C
rss
C
oss
C
iss
C
oss
C
rss
SHORTED
ds
gd
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
14.0
ID= 20A
12.0
)
V
(
e
g
10.0
a
t
l
o
V
e
8.0
c
r
u
o
S
-
6.0
o
t
e
t
a
4.0
G
,
S
G
V
2.0
VDS= 24V
VDS= 15V
VDS= 6.0V
0.0
0 5 10 15 20 25 30 35 40
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 2015
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