Applications
R
DS(on)
typ.
1.25m
Ω
PD - 96436
S trongIRFET
IRFB7434PbF
HEXFET® Power MOSFET
l Brushed Motor drive applications
l BLDC Motor drive applications
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
l DC/AC Inverters
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
V
D
DSS
40V
max. 1.6mΩ
G
I
D
(Silicon Limited)
S
I
D
(Package Limited)
D
D
G
317A
S
TO-220AB
IRFB7434PbF
GDS
Gate Drain Source
c
195A
Ordering Information
Base part number Package Type
IRFB7434PbF TO-220 Tube 50 IRFB7434PbF
)
5
Ω
m
(
e
c
n
4
a
t
s
i
s
e
R
n
3
O
e
c
r
u
o
S
2
o
t
n
i
a
r
D
1
,
)
n
o
(
S
D
0
R
2 4 6 8 10 12 14 16 18 20
V
Gate -to -Source Voltage (V)
GS,
ID = 100A
TJ = 125°C
TJ = 25°C
Standard Pack
Form Qua ntity
350
300
)
250
A
(
t
n
e
r
200
r
u
C
n
i
150
a
r
D
,
D
100
I
50
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Complete Part Number
Limited By Package
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Maximum Drain Current vs. Case Temperature
www.irf.com 1
04/20/12
IRFB7434PbF
D
GS
J
STG
AR
AR
θ
θ
θ
JA
Max.
(BR)DSS
Δ
(BR)DSS
J
DS(on)
GS( th)
DSS
GSS
G
Conditions
D
DS
DS
DS
Absolute Maximum Ratings
Symbol Parameter Units
c
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I
@ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
@ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
I
D
I
DM
@TC = 25°C Maximum Power Dissipation W
P
D
Pulsed Drain Current
d
Linear Derating Factor W/°C
V
T
T
Gate-to -Source Voltage V
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mountin g torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
E
(tested) Single Pulse Avalanche Energy Tested Value
AS
I
E
Single Pulse Avalanche Energy
Avalanche Current
d
Repetitive Avalanche Energy
e
k
d
See Fig. 14, 15 , 22a, 22b
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
R
CS
R
Junction-to-Case
Case-to-Sink, Flat Greased Surface 0.50 –––
Junction-to-Ambient ––– 62
j
––– 0.51
317
c
224
195
1270
294
1.96
± 20
-55 to + 175
300
10lbfxin (1.1Nxm)
490
800
A
°C
mJ
A
mJ
°C/W
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
V
R
V
I
I
R
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
RG = 50Ω, I
I
≤ 100A, di/dt ≤ 1307A/μs, V
SD
Drain-to-Source Breakdown Voltage 40 ––– ––– V
Breakdown Voltage Temp. Coefficient ––– 0.032 ––– V/°C
/ΔT
Static Drain-to-Source On-Resistance ––– 1.25 1.6 mΩ
1.8 ––– mΩ
Gate Threshold Voltage 2.2 3.0 3.9 V
Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 150
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
Internal Gate Resistance ––– 2.1 ––– Ω
Pulse width ≤ 400μs; duty cycle ≤ 2%.
C
eff. (TR) is a fixed capacitance that gives the same charging time
oss
, starting TJ = 25°C, L = 0.099mH
Jmax
= 100A, VGS =10V.
AS
DD
≤ V
(BR)DSS
as C
C
C
R
This value determined from sample failure population,
, TJ ≤ 175°C.
while V
oss
eff. (ER) is a fixed capacitance that gives the same energy as
oss
while V
oss
is measured at TJ approximately 90°C.
θ
starting TJ = 25°C, L=0.099mH, RG = 50Ω, I
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
DS
VGS = 0V, ID = 250μA
Referen ce to 25°C, I
= 10V, ID = 100A
V
GS
= 6.0 V, ID = 50A
V
GS
= VGS, ID = 250μA
V
V
μA
nA
= 40V, VGS = 0V
V
= 40V, VGS = 0V, TJ = 125°C
V
= 20V
GS
= -20V
V
GS
.
DSS
.
DSS
= 100A, VGS =10V.
AS
= 5mA
g
g
d
2 www.irf.com
Dynamic @ TJ = 25°C (unless otherwise specified)
g
sync
d(on)
r
iss
oss
rss
S
rr
J
RRM
DS
D
J
D
D
Symbol Parameter Min. Typ. Max. Units
gfs Forward Transconductance 211 ––– ––– S
Q
Q
gs
Q
gd
Q
t
t
t
d(off)
t
f
C
C
C
eff. (ER ) Effective Outp ut Capacitance (Energ y Related) –– – 1880 –––
C
oss
eff. (TR) Effective Output Capacita nce (Time Related) –– – 2208 –––
C
oss
Total Gate Charge ––– 216 324
Gate-to-Source Charge ––– 51 –––
Gate-to-Drain ("Miller") Charge ––– 77 –––
Total Gate Charge Sync. (Qg - Qgd) ––– 139 –––
Turn-On Delay Time ––– 24 –––
Rise Time ––– 68 –––
Turn-Off Delay Time ––– 115 –––
Fall Time ––– 68 –––
Input Capacitance ––– 10820 –––
Output Capacitance ––– 1540 –––
Reverse Transfer Capacitance ––– 1140 –––
nC
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units
I
I
SM
V
SD
dv/dt Peak Diode Recovery
t
Q
rr
I
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
d
–––
–––
–––
––– 1270
317
c
Diode Forward Voltage ––– 0.9 1.3 V
f
––– 5.0 ––– V/ns
Reverse Recovery Time ––– 38 ––– TJ = 25°C VR = 34V,
––– 37 ––– T
Reverse Recovery Charge ––– 50 ––– TJ = 25°C
––– 50 ––– TJ = 125°C
nC
Reverse Recovery Current ––– 1.9 ––– A TJ = 25°C
Conditions
VDS = 10V, ID = 100A
= 100A
I
=20V
V
DS
g
= 10V
V
GS
I
= 100A, VDS =0V, VGS = 10V
VDD = 20V
I
= 30A
ns
= 2.7Ω
R
G
VGS = 10V
g
VGS = 0V
V
= 25V
pF
ƒ = 1.0 MHz, See Fig. 5
= 0V, VDS = 0V to 32V i, See Fig. 12
V
GS
= 0V, VDS = 0V to 32V
V
GS
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
= 25°C, IS = 100A, VGS = 0V
T
J
= 175°C, IS = 100A, VDS = 40V
T
ns
= 125°C IF = 100A
IRFB7434PbF
h
D
G
S
g
di/dt = 100A/μs
g
www.irf.com 3
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