Datasheet IRF 9540NSPbF Datasheet
PD - 96030
IRF9540NSPbF
IRF9540NLPbF
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l 150°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Some Parameters are Different from
G
IRF9540NS/L
l P-Channel
l Lead-Free
Description
D
Features of this design are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These features combine to make this design an extremely
efficient and reliable device for use in a wide
variety of other applications.
D2Pak
IRF9540NSPbF
GDS
Gate Drain Source
Absolute Maximum Ratings
Parameter Units
ID @ TC = 25°C
I
@ TC = 100°C
D
I
DM
PD @TA = 25°C
P
@TC = 25°C
D
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
T
J
T
STG
Continuous Drain Current, V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Maximum Power Dissipation W
Maximum Power Dissipation
Linear Derating Factor W/°C
Gate-to-Source Voltage V
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and °C
Storage Temperature Range
Soldering Temperature, for 10 seconds
c
c
@ -10V A
GS
d
c
e
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Junction-to-Case –––
Junction-to-Ambient (PCB Mount, steady state)
g
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D
S
S
D
G
V
R
DS(on)
DSS
ID = -23A
D
IRF9540NLPbF
Max.
-23
-14
-92
3.1
110
0.9
± 20
84
-14
11
-13
-55 to + 150
300 (1.6mm from case )
1.1
––– 40
= -100V
= 117mΩ
S
D
G
TO-262
mJ
A
mJ
V/ns
°C/W
09/30/05
IRF9540NS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS
∆ΒV
DSS
R
DS(on)
V
GS(th)
gfs Forward Transconductance 5.6 ––– ––– S
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Drain-to-Source Breakdown Voltage -100 ––– ––– V
/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C
Static Drain-to-Source On-Resistance ––– ––– 117
Gate Threshold Voltage -2.0 ––– -4.0 V
Drain-to-Source Leakage Current ––– ––– -50 µA
––– ––– -250
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
Total Gate Charge ––– 73 110 nC
Gate-to-Source Charge ––– 13 20
Gate-to-Drain ("Miller") Charge ––– 38 57
Turn-On Delay Time ––– 13 ––– ns
Rise Time ––– 64 –––
Turn-Off Delay Time ––– 40 –––
Fall Time ––– 45 –––
VGS = 0V, ID = -250µA
Reference to 25°C, I
mΩ
V
= -10V, ID = -14A
GS
VDS = VGS, ID = -250µA
= -50V, ID = -14A
V
DS
= -100V, VGS = 0V
V
DS
V
= -80V, VGS = 0V, TJ = 125°C
DS
= -20V
V
GS
= 20V
V
GS
= -14A
I
D
= -80V
V
DS
= -10V
V
GS
V
= -50V
DD
= -14A
I
D
= 5.1Ω
R
G
V
= -10V
GS
Internal Drain Inductance ––– 4.5 ––– nH Between lead,
6mm (0.25in.)
Internal Source Inductance ––– 7.5 ––– from package
and center of die contact
Input Capacitance ––– 1450 ––– pF
Output Capacitance ––– 430 –––
Reverse Transfer Capacitance ––– 230 –––
= 0V
V
GS
= -25V
V
DS
ƒ = 1.0MHz, See Fig. 5
Parameter Min. Typ. Max. Units
Continuous Source Current ––– ––– -23
(Body Diode) A
Pulsed Source Current ––– ––– -92
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
c
––– ––– -1.6 V
––– 140 210 ns
Reverse Recovery Charge ––– 890 1340 nC
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = -14A, VGS = 0V
TJ = 25°C, IF = -14A, VDD = -25V
di/dt = -100A/µs
Conditions
= -1mA
D
f
f
f
Conditions
f
f
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11)
Starting T
RG = 25Ω, I
I
SD
= 25°C, L = 0.88mH
J
= -14A. (See Figure 12)
AS
≤ -14A, di/dt ≤ -620A/µs, V
DD
≤ V
(BR)DSS
,
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1" square PCB (FR-4or G-10
Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
TJ ≤ 150°C.
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IRF9540NS/LPbF
1000
)
A
(
t
n
e
r
r
u
C
e
c
r
u
o
S
o
t
n
i
a
r
D
,
D
I
-
TOP -15V
100
BOTTOM -4.5V
10
1
VGS
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
≤60µs PULSE WIDTH
Tj = 25°C
0.1
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
100
TJ = 25°C
)
A
(
t
n
e
r
r
10
u
C
e
c
r
u
o
S
o
t
n
i
1
a
r
D
,
D
I
-
V
≤
TJ = 150°C
= -50V
DS
60µs PULSE WIDTH
0.1
2 4 6 8 10 12 14
-VGS, Gate-to-Source Voltage (V)
1000
)
A
(
t
n
e
r
r
u
C
e
c
r
u
o
S
o
t
n
i
a
r
D
,
D
I
-
TOP -15V
100
BOTTOM -4.5V
10
1
VGS
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
≤60µs PULSE WIDTH
Tj = 150°C
0.1
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
e
c
n
a
t
s
i
s
e
R
n
O
e
c
r
u
o
S
o
t
n
i
a
r
D
,
)
n
o
(
S
D
R
ID = -14A
V
= -10V
GS
1.5
)
d
e
z
i
l
a
m
r
o
N
(
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
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IRF9540NS/LPbF
)
F
p
(
e
c
n
a
t
i
c
a
p
a
C
,
C
10000
1000
100
V
= 0V, f = 1 MHZ
GS
C
= C
iss
rss
oss
= C
= C
gs
gd
ds
C
C
1 10 100
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
100
)
A
(
t
n
e
r
r
u
C
n
i
a
r
D
e
s
r
e
v
e
R
,
D
S
I
-
TJ = 150°C
10
TJ = 25°C
1
0.1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
-VSD, Source-to-Drain Voltage (V)
+ Cgd, C
+ C
gd
C
iss
C
oss
C
rss
SHORTED
ds
V
GS
= 0V
20
ID= -14A
)
V
(
16
e
g
a
t
l
o
V
e
12
c
r
u
o
S
o
t
-
8
e
t
a
G
,
S
G
4
V
-
0
0 20406080100120
QG, Total Gate Charge (nC)
VDS= -80V
VDS= -50V
VDS= -20V
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
)
A
(
t
n
100
e
r
r
u
C
e
c
r
u
o
10
S
o
t
n
i
a
r
D
1
,
D
I
-
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1 10 100 1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
-V
, Drain-toSource Voltage (V)
DS
100µsec
1msec
10msec
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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