Datasheet IRF8721PBF Datasheet
A
PD - 97119
IRF8721PbF
Applications
l Control MOSFET of Sync-Buck
V
DSS
HEXFET® Power MOSFET
R
DS(on)
max
Qg
Converters used for Notebook Processor
Power
l Control MOSFET for Isolated DC-DC
30V
8.5m
@VGS = 10V
:
8.3nC
Converters in Networking Systems
Benefits
l Very Low Gate Charge
l Low R
l Low Gate Impedance
l Fully Characterized Avalanche Voltage
DS(on)
at 4.5V V
GS
and Current
l 20V V
l Lead-Free
Max. Gate Rating
GS
S
S
S
1
2
3
4
Top View
A
8
D
7
D
6
D
5
DG
SO-8
Description
The IRF8721PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package The IRF8721PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency
DC-DC converters that power the latest generation of processors for Notebook and Netcom
applications.
Absolute Maximum Ratings
V
DS
V
GS
@ TA = 25°C
I
D
I
@ TA = 70°C
D
I
DM
PD @TA = 25°C
@TA = 70°C
P
D
T
J
T
STG
Parameter Units
Drain-to-Source Voltage V
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation W
Power Dissipation
Linear Derating Factor W/°C
Operating Junction and °C
Storage Temperature Range
c
@ 10V
GS
@ 10V
GS
Max.
30
± 20
14
11
110
2.5
1.6
0.02
-55 to + 150
A
Thermal Resistance
Parameter Typ. Max. Units
fg
g
––– 20 °C/W
––– 50
R
θ
JL
R
θ
JA
Junction-to-Drain Lead
Junction-to-Ambient
Notes through are on page 9
www.irf.com 1
07/30/07
IRF8721PbF
)
)
)
g
g
g
g
g
g
g
)
)
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
ΔΒV
DSS
R
DS(on
V
GS(th
ΔV
GS(th
I
DSS
I
GSS
gfs Forward Transconductance 27 ––– ––– S
Q
Q
s1
Q
s2
Q
d
Q
odr
Q
sw
Q
oss
R
G
t
d(on
t
r
t
d(off
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 30 ––– ––– V
/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C
Static Drain-to-Source On-Resistance ––– 6.9 8.5 mΩ
––– 10.6 12.5
Gate Threshold Voltage 1.35 ––– 2.35 V
VGS = 0V, ID = 250μA
Reference to 25°C, I
V
GS
V
GS
V
DS
Gate Threshold Voltage Coefficient ––– -6.2 ––– mV/°C
Drain-to-Source Leakage Current ––– ––– 1.0 μA
––– ––– 150
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
V
DS
V
DS
V
GS
V
GS
V
DS
Total Gate Charge ––– 8.3 12
Pre-Vth Gate-to-Source Charge ––– 2.0 –––
Post-Vth Gate-to-Source Charge ––– 1.0 ––– nC
Gate-to-Drain Charge ––– 3.2 –––
V
DS
VGS = 4.5V
I
= 11A
D
Gate Charge Overdrive ––– 2.0 ––– See Fig. 16a and 16b
Switch Charge (Q
Output Charge ––– 5.0 ––– nC
Gate Resistance ––– 1.8
Turn-On Delay Time ––– 8.2 –––
Rise Time ––– 11 –––
Turn-Off Delay Time ––– 8.1 ––– ns
Fall Time ––– 7.0 –––
Input Capacitance ––– 1040 –––
Output Capacitance ––– 229 ––– pF
Reverse Transfer Capacitance ––– 114 –––
+ Q
) ––– 4.2 –––
s2
d
3.0
V
Ω
V
I
R
See Fig. 15a
V
V
ƒ = 1.0MHz
DS
DD
= 11A
D
G
GS
DS
Avalanche Characteristics
Parameter Units
E
AS
I
AR
Single Pulse Avalanche Energy
Avalanche Current
c
d
Typ.
–––
–––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current ––– ––– 3.1
(Body Diode) A
Pulsed Source Current ––– ––– 112
(Body Diode)
c
Diode Forward Voltage ––– ––– 1.0 V
Reverse Recovery Time ––– 14 21 ns
Reverse Recovery Charge ––– 15 23 nC
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 11A, VGS = 0V
= 25°C, IF = 11A, VDD = 15V
T
J
di/dt = 300A/μs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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Conditions
= 1mA
D
= 10V, ID = 14A
= 4.5V, ID = 11A
e
e
= VGS, ID = 25μA
= 24V, VGS = 0V
= 24V, VGS = 0V, TJ = 125°C
= 20V
= -20V
= 15V, ID = 11A
= 15V
= 16V, VGS = 0V
= 15V, VGS = 4.5V
= 1.8Ω
= 0V
= 15V
Max.
68
11
Conditions
G
e
mJ
A
D
S
e
IRF8721PbF
1000
)
A
(
100
t
n
e
r
r
u
C
10
e
c
r
u
o
S
o
1
t
n
i
a
r
D
,
0.1
D
I
2.3V
0.01
0.1 1 10 100
≤
Tj = 25°C
TOP 10V
BOTTOM 2.3V
60μs PULSE WIDTH
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
V
= 15V
)
A
(
t
n
e
r
r
u
C
e
c
r
u
o
S
o
t
n
i
a
r
D
,
D
I
0.01
DS
≤
60μs PULSE WIDTH
100
10
TJ = 150°C
1
0.1
1.0 2.0 3.0 4.0
TJ = 25°C
VGS, Gate-to-Source Voltage (V)
VGS
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
1000
)
A
(
t
n
e
r
r
100
u
C
e
c
r
u
o
S
o
t
n
10
i
a
r
D
,
D
I
2.3V
≤
60μs PULSE WIDTH
Tj = 150°C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
e
c
n
a
t
s
i
s
e
R
n
O
e
c
r
u
o
S
o
t
n
i
a
r
D
,
)
n
o
(
S
D
R
ID = 14A
V
= 10V
GS
1.5
)
d
e
z
i
l
a
m
r
o
N
(
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
TOP 10V
BOTTOM 2.3V
VGS
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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